Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the same
View Patent ↗This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g., <550° C.) chemical vapor deposition processes for fabrication of ULSI devices and device structures. Such silicon precursor compositions comprise at least a silane or disilane derivative that is substituted with at least one alkylhydrazine functional groups and is free of halogen substitutes.
1. A method of forming a silicon-containing film on a substrate, comprising contacting a substrate under vapor deposition conditions comprising a temperature below 450° C. with a vapor of a disilane compound of the formula:
to form said silicon-containing film on the substrate.
2. The method of claim 1 , wherein said film comprises silicon dioxide.
3. The method of claim 1 , wherein said film comprises silicon nitride.
4. The method of claim 1 , wherein said film comprises siliconoxynitride.
5. The method of claim 1 , wherein said film comprises a low dielectric constant silicon-containing film.
6. The method of claim 1 , wherein said film comprises a gate silicate film.
7. The method of claim 1 , wherein said film comprises an epitaxial silicon-containing film.
8. The method of claim 1 , wherein the substrate comprises a semiconductor device substrate.
9. The method of claim 1 , wherein said vapor deposition comprises chemical vapor deposition.
10. The method of claim 1 , conducted in an ULSI device fabrication process.
11. The method of claim 1 , wherein said vapor is transported to said contacting at temperature below 300° C.
12. The method of claim 11 , wherein said vapor is transported at atmospheric pressure.
13. A method of manufacturing a semiconductor device, comprising using a silicon precursor of the formula:
to deposit at temperature below 450° C. a silicon-containing film on a substrate for said semiconductor device.
14. The method of claim 13 , wherein the silicon precursor is used to form a silicon nitride material in said semiconductor device.
15. The method of claim 14 , wherein said silicon precursor is used to form a semiconductor device diffusion barrier layer.
16. The method of claim 14 , wherein said silicon precursor is used to form a semiconductor device etch-stop layer.