Nitride based semiconductor device with concave gate region
View Patent ↗In FET, a second nitride semiconductor layer is provided on a first nitride semiconductor layer, and a source electrode and a drain electrode are each provided to have at least a portion thereof in contact with the second nitride semiconductor layer. A concave portion is formed in the upper surface of the second nitride semiconductor layer to be located between the source electrode and the drain electrode. A gate electrode is provided over the concave portion to cover the opening of the concave portion.
1. A semiconductor device comprising:
a substrate;
a semiconductor multilayer having a first nitride-based compound semiconductor layer provided over the substrate and a second nitride-based compound semiconductor layer provided over the first nitride-based compound semiconductor layer to have a band gap larger than that of the first nitride-based compound semiconductor layer;
a source electrode and a drain electrode each provided to have at least a portion thereof in contact with the semiconductor multilayer,
a concave portion provided on an upper surface of the semiconductor multilayer to be located between the source electrode and the drain electrode, and concaved in a thickness direction of the semiconductor multilayer;
a gate electrode provided over the concave portion to cover an opening of the concave portion; and
a p-type nitride-based compound semiconductor layer provided to cover the opening of the concave portion and to be located between the gate electrode and the semiconductor multilayer,
wherein the p-type nitride-based compound semiconductor layer works as a part of a terminal for controlling a current between the source and the drain by applying a voltage, and
a film thickness of a portion of the p-type nitride-based compound semiconductor layer located over a bottom surface of the concave portion is larger than a film thickness of a portion of the p-type nitride-based compound semiconductor layer located on the upper surface of the semiconductor multilayer.
2. A semiconductor device comprising:
a substrate;
a semiconductor multilayer having a first nitride-based compound semiconductor layer provided over the substrate and a second nitride-based compound semiconductor layer provided over the first nitride-based compound semiconductor layer to have a band gap larger than that of the first nitride-based compound semiconductor layer;
a source electrode and a drain electrode each provided to have at least a portion thereof in contact with the semiconductor multilayer;
a concave portion provided on an upper surface of the semiconductor multilayer to be located between the source electrode and the drain electrode, and concaved in a thickness direction of the semiconductor multilayer;
a gate electrode provided over the concave portion to cover an opening of the concave portion; and
an insulating film in contact with a portion of the upper surface of the semiconductor multilayer and opened to expose the concave portion, wherein
the gate electrode has a portion thereof provided over the insulating film.
3. The semiconductor device of claim 2 , wherein a fourth insulating film is provided to be in contact with a bottom surface of the concave portion and located between the gate electrode and the insulating film.
4. A semiconductor device comprising:
a substrate;
a semiconductor multilayer having a first nitride-based compound semiconductor layer provided over the substrate and a second nitride-based compound semiconductor layer provided over the first nitride-based compound semiconductor layer to have a band gap larger than that of the first nitride-based compound semiconductor layer;
a source electrode and a drain electrode each provided to have at least a portion thereof in contact with the semiconductor multilayer;
a concave portion provided on an upper surface of the semiconductor multilayer to be located between the source electrode and the drain electrode, and concaved in a thickness direction of the semiconductor multilayer; and
a gate electrode provided over the concave portion to cover an opening of the concave portion
wherein the semiconductor multilayer further has an n-type nitride-based compound semiconductor layer provided as an uppermost layer over the second nitride-based compound semiconductor layer, and
at least one of a portion of the n-type nitride-based compound semiconductor layer located between the gate electrode and the source electrode and a portion of the n-type nitride-based compound semiconductor layer located between the gate electrode and the drain electrode is removed.