Carbon diode array for resistivity changing memories

1. An integrated circuit comprising:

a resistivity changing memory element comprising a carbon memory element, a phase changing memory element, a conductive bridging memory element, a transition metal oxide memory element, or a magnetoresistive memory element; and

a carbon Schottky diode formed at an interface between a semiconductor material and a conductive carbon material, the carbon Schottky diode electrically coupled to the resistivity changing memory element, the resistivity changing memory element and the carbon Schottky diode forming a memory cell.

2. The integrated circuit of claim 1 , wherein the semiconductor material comprises silicon.

3. The integrated circuit of claim 1 , wherein the conductive carbon material comprises an sp2-rich carbon material.

4. The integrated circuit of claim 1 , wherein the memory cell is formed over an epitaxial semiconductor substrate.

5. The integrated circuit of claim 1 , comprising an array of memory cells, the memory cell being part of the array, wherein each memory cell in the array of memory cells comprises a resistivity changing memory element comprising a carbon memory element, a phase changing memory element, a conductive bridging memory element, a transition metal oxide memory element, or a magnetoresistive memory element, and a carbon diode coupled to the resistivity changing memory element, wherein each carbon diode comprises a carbon Schottky diode formed at an interface between a semiconductor material and a conductive carbon material.

6. The integrated circuit of claim 5 , wherein the conductive carbon material comprises an sp2-rich carbon material.

7. The integrated circuit of claim 5 , wherein the array of memory cells is formed in a first level, and wherein the integrated circuit further comprises a second array of memory cells formed in a second level, and wherein the array of memory cells and the second array of memory cells share a bit line.

8. An integrated circuit comprising:

isolation trenches disposed in a substrate;

a word line disposed in the substrate;

a first doped region disposed between adjacent isolation trenches, the first doped region coupled to the word line;

a first conductive carbon layer disposed over the first doped region between the adjacent isolation trenches, the first conductive carbon layer contacting the first doped region thereby forming a carbon Schottky diode; and

a non-volatile resistance changing memory layer disposed over the first conductive carbon layer, the non-volatile resistance changing memory layer being electrically coupled to the first conductive carbon layer; and

a bit line disposed over the non-volatile resistance changing memory layer and electrically coupled to the non-volatile resistance changing memory layer.

9. The integrated circuit of claim 8 , wherein the non-volatile resistance changing memory layer comprises a phase change memory material, a carbon memory material, a magnetoresistive memory material, an organic memory material, a conductive bridging memory element, or a transition metal oxide memory.

10. The integrated circuit of claim 8 , further comprising a first refractory metal layer disposed between the non-volatile resistance changing memory layer and the first conductive carbon layer.

11. The integrated circuit of claim 10 , wherein the non-volatile resistance changing memory layer comprises the first conductive carbon layer, an insulating carbon layer disposed over the first conductive carbon layer, the insulating carbon layer and the first refractory metal layer disposed between the adjacent isolation trenches.

12. The integrated circuit of claim 11 , wherein the insulating carbon layer is a liner on an opening having sidewalls comprising the adjacent isolation trenches and a bottom surface having the first conductive carbon layer.

13. The integrated circuit of claim 11 , further comprising a second refractory metal layer disposed between the first conductive carbon layer and the insulating carbon layer.

14. The integrated circuit of claim 13 , wherein the insulating carbon layer is a liner on an opening having sidewalls comprising the adjacent isolation trenches and a bottom surface having the second refractory metal layer.

15. The integrated circuit of claim 11 , wherein the non-volatile resistance changing memory layer further comprises a second conductive carbon layer disposed between the insulating carbon layer and the first refractory metal layer, the second conductive carbon layer disposed between the adjacent isolation trenches.

16. The integrated circuit of claim 8 , wherein the non-volatile resistance changing memory layer physically contacts the first conductive carbon layer.

17. The integrated circuit of claim 8 , wherein the non-volatile resistance changing memory layer comprises the first conductive carbon layer, an insulating carbon layer disposed over the first conductive carbon layer, and a second conductive carbon layer disposed over the insulating carbon layer, the insulating carbon layer and the second conductive carbon layer disposed between the adjacent isolation trenches.

18. An integrated circuit comprising:

a word line comprising a first conductive carbon layer disposed in a substrate;

isolation trenches disposed over the first conductive carbon layer in the substrate;

a first doped region disposed over the first conductive carbon layer, the first doped region disposed between adjacent isolation trenches, wherein the first doped region and the first conductive carbon layer contact to form a carbon Schottky diode;

a second doped region disposed over the first doped region, the second doped region having a higher doping of a same conductivity type than the first doped region; and

a non-volatile resistance changing memory layer disposed over the second doped region, the non-volatile resistance changing memory layer being electrically coupled to the second doped region; and

a bit line disposed over the non-volatile resistance changing memory layer and electrically coupled to the non-volatile resistance changing memory layer.

19. The integrated circuit of claim 18 , further comprising a first refractory metal layer disposed under the first conductive carbon layer.

20. The integrated circuit of claim 18 , further comprising a second conductive carbon layer disposed over the second doped region between the adjacent isolation trenches.

21. The integrated circuit of claim 20 , further comprising a silicide layer disposed between the second doped region and the second conductive carbon layer.

22. The integrated circuit of claim 20 , wherein the non-volatile resistance changing memory layer comprises an insulating carbon layer.

23. The integrated circuit of claim 22 , wherein the insulating carbon layer is a liner on an opening having sidewalls comprising the adjacent isolation trenches and a bottom surface having the second conductive carbon layer.