Narrow semiconductor trench structure

1. A semiconductor fabrication method for forming a narrow trench, said method comprising:

forming a first layer of insulating material on a substrate;

creating a trench through the first layer of insulating material and into the substrate;

forming a second insulating material on the first layer and on exposed portions of the trench;

removing the second insulating material from the first layer of insulating material and the bottom of the trench;

filling the trench with an epitaxial material;

removing the first layer of insulating material; and

forming a narrow trench by the removal of remaining portions of the second insulating material.

2. The method of claim 1 wherein said forming a first layer of insulating material comprises growing said first layer of insulating material.

3. The method of claim 1 wherein said forming a second insulating material comprises growing said second insulating material.

4. The method of claim 1 wherein said removing the second insulating material comprises applying a blanket dry etching process.

5. The method of claim 1 wherein said filling comprises growing epitaxial material.

6. The method of claim 1 wherein said removing the first layer of insulating material comprises applying chemical mechanical polishing.

7. The method of claim 1 further comprising annealing the substrate at high temperature in a Hydrogen-ambient atmosphere.