Integrated circuit with resistive memory cells and method for manufacturing same

1. An integrated circuit, comprising:

a plurality of voltage supply contacts;

a plurality of resistive memory cells, each comprising a resistive memory element and an active area by means of which the resistive memory element may be brought into signal connection with a voltage supply contact; and

a plurality of wordlines and a plurality of bitlines adapted to select a predetermined resistive memory cell, wherein at least four resistive memory cells are in signal connection with a given one of the plurality of voltage supply contacts, wherein of said at least four resistive memory cells, two resistive memory elements are arranged above or under one bitline and two other resistive memory elements are arranged above or under another bitline, and wherein of said at least four resistive memory cells, two active areas are arranged above or under one wordline and two other active areas are arranged above or under another wordline,

wherein a direction of a current that flows in each active area is at an angle other than 90° with respect to an orientation of the plurality of wordlines.

2. The integrated circuit according to claim 1 , wherein the four resistive memory elements, the respective voltage supply contact and the active areas connecting the resistive memory elements and the associated voltage supply contact substantially form the shape of an X.

3. The integrated circuit according to claim 2 , wherein said active area, which respectively connects one resistive memory element and the associated voltage supply contact, is provided in an angle of substantially 45° with respect to said wordline.

4. The integrated circuit according to claim 1 , wherein between two adjacent groups of resistive memory elements, the associated voltage supply contact and active areas connecting the resistive memory elements and the associated voltage supply contact there is respectively provided an unused wordline.

5. The integrated circuit according to claim 1 , wherein the supply voltage provided at the voltage supply contact is constant.

6. The integrated circuit according to claim 1 , wherein the supply voltage provided at the voltage supply contact is pulsed.

7. The integrated circuit according to claim 1 , wherein resistive memory cells are arranged on a first plane and a second plane, and resistive memory cells which are arranged on the first and second planes are in signal connection with one voltage supply contact, the first plane having a first direction parallel to a direction of a first current that flows in a first active area disposed on the first plane and the second plane having a second direction parallel to a direction of a second current that flows in a second active area disposed on the second plane, wherein the first and second directions are non-parallel relative to each other.

8. The integrated circuit according to claim 1 , wherein the voltage supply contact bear the ground potential.

9. A method of manufacturing an integrated circuit, comprising:

providing a plurality of voltage supply contacts;

providing a plurality of resistive memory cells, each comprising a resistive memory element and an active area by means of which the resistive memory element may be brought into signal connection with a voltage supply contact;

providing a plurality of wordlines and a plurality of bitlines adapted to select a predetermined resistive memory cell; and

connecting at least four resistive memory cells with one voltage supply contact and; wherein said providing said plurality of resistive memory cells comprises:

arranging two resistive memory elements of said at least four resistive memory cells above or under one bitline and two other resistive memory elements above or under another bitline, and

arranging two active areas of said at least four resistive memory cells above or under one wordline and two other active areas above or under another wordline, wherein a direction of a current that flows in each active area is at an angle other than 90° with respect to an orientation of the plurality of wordlines.

10. The method according to claim 9 , wherein the four resistive memory elements, the respective voltage supply contact and the active areas connecting the resistive memory elements and the associated voltage supply contact substantially form the shape of an X.

11. A computing system, comprising:

an input apparatus;

an output apparatus;

a processing apparatus; and

a memory, said memory, comprising:

a plurality of voltage supply contacts;

a plurality of resistive memory cells, each comprising a resistive memory element and an active area by means of which the resistive memory element may be brought into signal connection with a voltage supply contact; and

a plurality of wordlines and a plurality of bitlines adapted to select a predetermined resistive memory cell, wherein at least four resistive memory cells are in signal connection with one voltage supply contact,

wherein of said at least four resistive memory cells two resistive memory elements are arranged above or under one bitline and two other resistive memory elements are arranged above or under another bitline, and wherein of said at least four resistive memory cells two active areas are arranged above or under one wordline and two other active areas are arranged above or under another wordline, and

wherein a direction of a current that flows in each active area is at an angle other than 90° with respect to an orientation of the plurality of wordlines.

12. The computing system according to claim 11 , wherein the four resistive memory elements, the respective voltage supply contact and the active areas connecting the resistive memory elements and the associated voltage supply contact substantially form the shape of an X.

13. The computing system according to claim 12 , wherein said active area, which respectively connects one resistive memory element and the associated voltage supply contact, is provided in an angle of substantially 45° with respect to said wordline.

14. An integrated circuit, comprising:

a first and second bit line;

a first and second wordline;

a voltage supply contact;

a first, second, third, and fourth resistive memory cell, said first, second, third, and fourth resistive memory cells respectively comprising a first, second, third, and fourth resistive memory element and a first, second, third, and fourth active area,

wherein said first, second, third, and fourth resistive memory cells are connected with said voltage supply contact,

wherein said first and third resistive memory elements are arranged above or under said first bitline and said second and fourth resistive memory elements are arranged above or under said second bitline; and

wherein said first and second active areas are arranged above or under said first wordline and said third and fourth active areas are arranged above or under said second wordline, and

wherein a direction of a current that flows in each active area is at an angle other than 90° with respect to an orientation of the first and second wordlines.

15. The integrated circuit according to claim 14 , wherein the four resistive memory cell and the respective voltage supply contact substantially form the shape of an X.