IP Library Granted Patent US 7,714,640
Granted Patent B2
US 7,714,640 · App. 12/032,565 · Granted May 11, 2010

No-trim low-dropout (LDO) and switch-mode voltage regulator circuit and technique

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Quick Facts
Patent No.
US 7,714,640
App. No.
12/032,565
Granted
May 11, 2010
Kind
B2
Abstract

An optimized output voltage circuit and technique obtainable without trimming is set forth. A voltage reference circuit and method devoid of trim resistors comprising a high gain amplifier, a plurality of bandgap resistors, and at least a plurality of bipolar devices interconnected across circuitry in a predetermined configuration having emitter areas greater than traditional emitter areas of traditional bipolar devices is set forth.

Claims (18)

1. A bandgap circuit devoid of a trim resistors comprising a high gain amplifier, a plurality of bandgap resistors, and at least four bipolar devices interconnected across circuitry in a predetermined configuration capable to produce a bandgap voltage (V BG ), to a first order, approximating a predetermined designed bandgap voltage (V BGDESIGN ), wherein individually, the emitter area of at least three or more of the four bipolar devices is greater than a traditional emitter area of an equivalent traditional bipolar device by a factor within a range of approximately 1.75 to 2.25, wherein the predetermined designed bandgap voltage (V BGDESIGN ) approximates a voltage in the range of 1.15 to 1.35 volts and the bandgap voltage (V BG ) approximates a voltage of within 10% of the designed bandgap voltage (V BGDESIGN ), and wherein the plurality of bandgap resistors are configured to be horizontally positioned in relation to a heat source approximately situated beyond a linear distance of approximately 200 μm.

2. The circuit of claim 1 , wherein the plurality of bandgap resistors are configured to be horizontally positioned in relation to a heat source proximately situated within a linear range of between approximately 200 and 500 μm.

3. The circuit of claim 2 , wherein the plurality of bandgap resistors are configured to be positioned with respect to one another in an alternating pattern such that no like resistor of the plurality is situated next to an identical resistor type of the plurality.

4. The circuit of claim 3 , wherein the heat source is power device.

5. The circuit of claim 1 , further comprising an output stage of a voltage regulator having a comparator, output driver, and feedback resistors R A and R B , wherein the feedback resistors are arranged and configured to be at least at a linear distance of approximately 175 μm from a proximate heating source.

6. The circuit of claim 5 , wherein the feedback resistors are arranged and configured to be at least at a linear distance of approximately 200 μm from a proximate power device.

7. A voltage reference circuit devoid of trim resistors comprising a high gain amplifier, two or more bandgap resistors each being horizontally positioned at a linear distance of at least 200 μm from a proximate power device, and four or more bipolar devices interconnected across circuitry in a predetermined configuration capable to produce a bandgap voltage (V BG ), to a first order, approximating a predetermined designed bandgap voltage (V BGDESIGN ), wherein each emitter area of each of the bipolar devices is greater than a traditional emitter area of a traditional bipolar device in one of a Brokaw cell, traditional bandgap circuit or an equivalent thereto, whereby the circuit is operable connected with an output stage circuit having a comparator, output driver, and feedback resistors R A and R B , wherein the feedback resistances are arranged and configured to be at a linear distance of at least 200 μm from a proximate heating source.

8. A method of improving a voltage reference circuit design to eliminate circuit trimming for a circuit producing a bandgap voltage (V BG ) to a first order, which approximates a predetermined designed bandgap voltage (V BGDESIGN ), comprising:

removing resistors and diodes associated with trimming,

repositioning each bandgap resistor to be horizontally positioned at a linear distance of at least 200 μm from a proximate power device, and,

replacing MOS devices with bipolar devices in a predetermined configuration.

9. The method of claim 8 , further comprising enlarging emitter areas of at least two bipolar devices comparatively to a traditional emitter area of a traditional bipolar device in one of a Brokaw cell, traditional bandgap circuit or an equivalent thereto.

10. The method of claim 9 , further comprising providing for operable connectability with an output stage circuit having a comparator, output driver, and feedback resistances R A and R B , wherein the feedback resistances are arranged and configured to be at a linear distance of at least 200 μm from a proximate heating source.

11. The method of claim 10 , further comprising reducing the resistance of each of the bandgap resistors.

12. The method of claim 11 , wherein the circuit is one of a low dropout (LDO) regulator, a switch-mode regulator, or a voltage regulator circuit.

13. The method of claim 9 , further comprising reducing at least a majority of resistance of all of the bandgap resistors by at least 5%.

14. The method of claim 13 , wherein the circuit is one of a low dropout (LDO) regulator, a switch-mode regulator, or a voltage regulator circuit.

15. The method of claim 13 , further comprising testing the circuit to produce a bandgap voltage (V BG ) to a first order within 10% of the predetermined designed bandgap voltage (V BGDESIGN ).

Assignments (10)
INTELLECTUAL PROPERTY BUY-IN AGREEMENT/ASSIGNMENT Recorded Apr 4, 2023
From: MICREL LLC
To: MICROCHIP TECHNOLOGY INCORPORATED
Reel/Frame 063241/0771 →
RELEASE OF SECURITY INTEREST Recorded Mar 14, 2022
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 060894/0437 →
RELEASE OF SECURITY INTEREST Recorded Mar 11, 2022
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 059363/0001 →
RELEASE OF SECURITY INTEREST Recorded Mar 10, 2022
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 059863/0400 →
SECURITY INTEREST Recorded Jun 4, 2021
From: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
Reel/Frame 057935/0474 →
SECURITY INTEREST Recorded Dec 24, 2020
From: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 055671/0612 →
SECURITY INTEREST Recorded Jun 5, 2020
From: MICROCHIP TECHNOLOGY INC.; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION
Reel/Frame 053468/0705 →
RELEASE OF SECURITY INTEREST Recorded May 30, 2020
From: JPMORGAN CHASE BANK, N.A, AS ADMINISTRATIVE AGENT
To: MICROCHIP TECHNOLOGY INC.; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 053466/0011 →
SECURITY INTEREST Recorded Apr 24, 2020
From: MICROCHIP TECHNOLOGY INC.; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 053311/0305 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 15, 2008
From: IMTIAZ, S.M. SOHEL
To: MICREL, INC.
Reel/Frame 020535/0886 →