Granted Patent B2

US 7,741,183 · App. 12/039,361 · Granted Jun 22, 2010

Abstract

Claims (41)

1. A method of forming a semiconductor device comprising:

providing a substrate for the semiconductor device;

forming a base oxide layer overlying the substrate by applying a rapid thermal oxidation (RTO) of the substrate in the presence of oxygen;

forming a nitrogen-rich region within and at a surface of the base oxide layer, the nitrogen-rich region overlying an oxide region in the base oxide layer;

after forming the nitrogen-rich region in the base oxide layer, annealing the semiconductor device in a dilute oxygen and hydrogen-free ambient of below 1 Torr partial pressure of the oxygen to heal bond damage in both the oxide region and the nitrogen-rich region in the base oxide layer;

after annealing the semiconductor device in the dilute oxygen ambient, subjecting the semiconductor device to an in-situ steam generation (ISSG) to grow and densify the oxide region in the base oxide layer at an interface between the substrate and base oxide layer;

forming a gate electrode on the nitrogen-rich region; and

forming a source in the substrate on a first side of the gate electrode and drain in the substrate on a second side of the gate electrode.

2. The method of claim 1 wherein annealing the semiconductor device in the dilute oxygen and hydrogen-free ambient further comprises annealing the semiconductor device at a temperature in a range of 950 to 1,050 degrees Celsius and at an oxygen partial pressure of substantially 0.5 Torr.

3. The method of claim 1 wherein subjecting the semiconductor device to in-situ steam generation (ISSG) is performed at a temperature in a range of 850 to 950 degrees Celsius.

4. The method of claim 1 wherein the base oxide layer comprises an original thickness of substantially thirteen Angstroms, the nitrogen-rich layer comprises a thickness of substantially five to seven Angstroms, and the base oxide layer is grown by a thickness of substantially one-half to one Angstrom at the interface.

5. The method of claim 1 wherein forming the base oxide layer further comprises forming the base oxide layer at a temperature of substantially 800 to 900 degrees Celsius and annealing the semiconductor device in a dilute oxygen ambient at a temperature of substantially 950 to 1,050 degrees Celsius.

6. The method of claim 1 wherein forming the base oxide layer further comprises forming the base oxide layer with an average nitrogen concentration across its depth of substantially seven to nine percent nitrogen.

7. The method of claim 1 wherein the nitrogen-rich region of the base oxide layer comprises a first nitrogen concentration across its depth within a range of no more than substantially fifty-seven percent nitrogen and no less than fifteen percent, and the oxide region of the base oxide layer comprises a second nitrogen concentration across its depth within a range of substantially fifteen percent to 0.1 percent nitrogen.

8. The method of claim 1 wherein the nitrogen-rich region within and at the surface of the base oxide layer is formed by placing the substrate and base oxide layer in a nitrogen plasma.

9. A method comprising the sequential steps of:

providing a semiconductor substrate;

forming a base oxide layer overlying the semiconductor substrate and forming an interface at a boundary thereof;

forming a nitrogen-rich layer overlying the base oxide layer by plasma incorporation of nitrogen into the base oxide layer;

annealing the semiconductor substrate, the base oxide layer and the nitrogen-rich layer in a dilute oxygen and hydrogen-free ambient of below 1 Torr partial pressure of oxygen to heal bond damage in both the base oxide layer and the nitrogen-rich layer;

placing the semiconductor substrate, base oxide layer and nitrogen-rich layer in an ambient for in-situ steam generation (ISSG), the ISSG growing and densifying the base oxide layer at the interface between the semiconductor substrate and the base oxide layer;

using the base oxide layer and the nitrogen-rich layer as a gate dielectric;

forming a transistor gate overlying the gate dielectric;

forming source and drain diffusions in the semiconductor substrate and adjacent the overlying transistor gate; and

forming a sidewall spacer laterally adjacent sides of the transistor gate.

10. The method of claim 9 wherein annealing the semiconductor substrate in the dilute oxygen and hydrogen-free ambient further comprises annealing at a temperature in a range of 950 to 1,050 degrees Celsius and at an oxygen partial pressure of substantially 0.5 Torr.

11. The method of claim 9 further comprising performing the in-situ steam generation at a temperature in a range of 850 to 950 degrees Celsius.

12. The method of claim 9 wherein the base oxide layer comprises an original thickness of substantially thirteen Angstroms, the nitrogen-rich layer comprises a thickness of substantially five to seven Angstroms, and the base oxide layer is grown by a thickness of substantially one-half to one Angstrom at the interface.

13. The method of claim 9 wherein forming the base oxide layer further comprises forming the base oxide layer at a temperature of substantially 800 to 900 degrees Celsius and annealing in a dilute oxygen ambient at a temperature of substantially 950 to 1,050 degrees Celsius.

14. The method of claim 9 wherein the base oxide layer comprises an average nitrogen concentration across its depth of substantially seven to nine percent nitrogen.

15. A method comprising:

providing a silicon substrate;

forming a dielectric layer overlying the silicon substrate and adjoining at an interface thereof;

introducing nitrogen into the dielectric layer with a nonlinear distribution of nitrogen through a depth of the dielectric layer, a greatest amount of nitrogen being present at an exposed surface of the dielectric layer;

annealing the silicon substrate and the dielectric layer in a dilute oxygen ambient at a temperature of at least 1,000 degrees Celsius, the dilute oxygen ambient being hydrogen-free and having an oxygen partial pressure below 1 Torr to heal bond damage in the dielectric layer;

after annealing the silicon substrate and the dielectric layer in the dilute oxygen ambient, subjecting the silicon substrate and the dielectric layer to an in-situ steam generation (ISSG) to grow and densify the dielectric layer at the interface between the silicon substrate and the dielectric layer

forming a gate electrode on the dielectric layer; and

forming a source in the substrate on a first side of the gate electrode and drain in the substrate on a second side of the gate electrode.

16. The method of claim 15 further comprising annealing the silicon substrate and the dielectric layer in a dilute oxygen ambient at an oxygen partial pressure of substantially 0.5 Torr.

17. The method of claim 15 wherein the dielectric layer comprises an average nitrogen concentration across its depth of substantially seven to nine percent nitrogen.

18. The method of claim 15 wherein an upper portion of the dielectric layer comprises a nitrogen-rich region of the dielectric layer and comprises a first nitrogen concentration across its depth within a range of no more than substantially fifty-seven percent nitrogen and no less than fifteen percent, a remaining underlying portion of the dielectric layer comprising a second nitrogen concentration across its depth within a range of substantially fifteen percent to 0.1 percent nitrogen.

Assignments (22)