IP Library Granted Patent US 8,633,552
Granted Patent B1
US 8,633,552 · App. 12/041,552 · Granted Jan 21, 2014

ESD protection for MEMS resonator devices

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Quick Facts
Patent No.
US 8,633,552
App. No.
12/041,552
Granted
Jan 21, 2014
Kind
B1
Abstract

Disclosed herein are MEMS resonator device designs and fabrication techniques that provide protection against electrostatic charge imbalances. In one aspect, a MEMS resonator device includes a substrate, an electrode including a first microstructure supported by the substrate, a resonant element including a second microstructure spaced from the first microstructure by a gap for resonant displacement of the second microstructure within the gap during operation, and a disabled shunt coupled to the electrode or the resonant element. The disabled shunt is disabled to enable the resonant displacement but otherwise configured to protect against damage from an electrostatic charge imbalance before the operation of the MEMS resonator device.

Claims (32)

1. A MEMS resonator device, comprising:

a substrate;

an electrode comprising a first microstructure supported by the substrate;

an electro-mechanically resonant element comprising a second microstructure spaced from the first microstructure by a gap and configured for mechanical, resonant vibration of the second microstructure that varies the gap during operation;

a disabled shunt coupled to the electrode or the resonant element, the disabled shunt being disabled to enable the resonant vibration but otherwise configured to protect the electrode and the resonant element from damage from an electrostatic charge imbalance before the operation of the MEMS resonator device; and

a cap mounted to the substrate to define a sealed cavity in which the electrode, the resonant element, and the disabled shunt are enclosed;

wherein the disabled shunt comprises a fuse link spaced from the substrate by a gas within the sealed cavity.

2. The MEMS resonator device of claim 1 , further comprising a splatter shield supported by the substrate and configured to protect the first microstructure or the second microstructure from debris generated when the fuse link is blown.

3. The MEMS resonator device of claim 1 ,

wherein:

the first and second microstructures are shorted to the substrate; and

the substrate includes an isolating trench configured to isolate the first and second microstructures from one another.

4. The MEMS resonator device of claim 1 , wherein the disabled shunt further comprises a pair of non-conductive foundations between which the fuse link extends.

5. The MEMS resonator device of claim 1 , wherein the disabled shunt further comprises a pair of polysilicon foundations between which the fuse link extends.

6. The MEMS resonator device of claim 5 , wherein the fuse link comprises metal.

7. The MEMS resonator device of claim 1 , wherein the fuse link is thermally isolated from the substrate.

8. A MEMS resonator device comprising:

a substrate;

an electrode comprising a first microstructure supported by the substrate;

a resonant element comprising a second microstructure spaced from the first microstructure by a gap and configured for resonant vibration of the second microstructure that varies the gap during operation;

a cap mounted to the substrate to define a sealed cavity in which the electrode and the resonant element are enclosed; and

a disabled shunt coupled to the electrode or the resonant element, the disabled shunt being disabled to enable the resonant vibration but otherwise configured to protect the electrode and the resonant element from damage from an electrostatic charge imbalance before the operation of the MEMS resonator device;

wherein the disabled shunt is enclosed within the sealed cavity.

9. The MEMS resonator device of claim 8 , wherein the disabled shunt comprises a fuse, and wherein the fuse is configured as an air bridge.

10. The MEMS resonator device of claim 9 , wherein the disabled shunt further comprises a pair of non-conductive foundations between which the air bridge extends.

11. The MEMS resonator device of claim 9 , wherein the disabled shunt further comprises a pair of polysilicon foundations between which the air bridge extends.

12. The MEMS resonator device of claim 11 , wherein the air bridge comprises metal.

13. The MEMS resonator device of claim 9 , wherein the air bridge is thermally isolated from the substrate.

14. The MEMS resonator device of claim 8 , wherein the disabled shunt comprises a fuse, and wherein the MEMS resonator device further comprises a splatter shield supported by the substrate and configured to protect the first microstructure or the second microstructure from debris generated when the fuse is blown.

15. The MEMS resonator device of claim 8 , wherein:

the first and second microstructures are shorted to the substrate; and

the substrate includes an isolating trench configured to isolate the first and second microstructures from one another.

Assignments (10)
RELEASE OF SECURITY INTEREST Recorded Mar 14, 2022
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 060894/0437 →
RELEASE OF SECURITY INTEREST Recorded Mar 11, 2022
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 059363/0001 →
RELEASE OF SECURITY INTEREST Recorded Mar 10, 2022
From: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
To: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 059863/0400 →
SECURITY INTEREST Recorded Jun 4, 2021
From: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT
Reel/Frame 057935/0474 →
SECURITY INTEREST Recorded Dec 24, 2020
From: MICROCHIP TECHNOLOGY INCORPORATED; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION, AS COLLATERAL AGENT
Reel/Frame 055671/0612 →
SECURITY INTEREST Recorded Jun 5, 2020
From: MICROCHIP TECHNOLOGY INC.; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: WELLS FARGO BANK, NATIONAL ASSOCIATION
Reel/Frame 053468/0705 →
RELEASE OF SECURITY INTEREST Recorded May 30, 2020
From: JPMORGAN CHASE BANK, N.A, AS ADMINISTRATIVE AGENT
To: MICROCHIP TECHNOLOGY INC.; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
Reel/Frame 053466/0011 →
SECURITY INTEREST Recorded Apr 24, 2020
From: MICROCHIP TECHNOLOGY INC.; SILICON STORAGE TECHNOLOGY, INC.; ATMEL CORPORATION; MICROSEMI CORPORATION; MICROSEMI STORAGE SOLUTIONS, INC.
To: JPMORGAN CHASE BANK, N.A., AS ADMINISTRATIVE AGENT
Reel/Frame 053311/0305 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 4, 2013
From: DISCERA, INC.
To: MICREL, INCORPORATED
Reel/Frame 031346/0685 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 13, 2008
From: WISSMAN, BARRY D; BROWN, ANDREW R; CLARK, JOHN R
To: DISCERA, INC.
Reel/Frame 021131/0732 →