IP Library Granted Patent US 7,795,718
Granted Patent B2
US 7,795,718 · App. 12/044,420 · Granted Sep 14, 2010

Warpage resistant semiconductor package and method for manufacturing the same

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Quick Facts
Patent No.
US 7,795,718
App. No.
12/044,420
Granted
Sep 14, 2010
Kind
B2
Abstract

A semiconductor package and a method for manufacturing the same is provided for minimizing or preventing warpage and twisting of semiconductor chip bodies as a result of thinning them during grinding. The semiconductor package includes a semiconductor chip body and a substrate. The semiconductor chip body has a first surface, a second surface facing away from the first surface, through-electrodes which pass through the semiconductor chip body and project from the second surface, and a warpage prevention part which projects in the shape of a fence along an edge of the second surface. The substrate has a substrate body and connection pads which are formed on an upper surface of the substrate body, facing the second surface, and which are connected with the projecting through-electrodes.

Claims (10)

1. A semiconductor package comprising:

a semiconductor chip having a semiconductor chip body having a first surface, a second surface facing away from the first surface, through-electrodes which pass through the semiconductor chip body and which project from the second surface, and a warpage prevention part which projects in the shape of a fence along an edge of the second surface; and

a substrate having a substrate body and connection pads which are formed on an upper surface of the substrate body, facing the second surface, and which are connected with the projecting through-electrodes.

2. The semiconductor package according to claim 1 , wherein the semiconductor chip body is located in a chip region, and the warpage prevention part is located along scribe line regions which are defined around the chip region.

3. The semiconductor package according to claim 1 , wherein a length of the through-electrodes, which project from the second surface, is substantially the same as a height of the warpage prevention part.

4. The semiconductor package according to claim 1 , wherein the warpage prevention part is intermittently formed on the second surface.

5. The semiconductor package according to claim 1 , wherein the through-electrodes projecting from the second surface include solder members.

6. The semiconductor package according to claim 1 , wherein at least two semiconductor chips are located on the substrate.

7. The semiconductor package according to claim 1 , further comprising:

bonding pads located on the first surface with the through-electrodes respectively passing through the bonding pads.

Assignments (4)
CORRECTIVE ASSIGNMENT TO CORRECT THE ASSIGNEE IS HYNIX SEMICONDUCTOR INC. NOT HYNIX-SEMICONDUCTOR INC. THERE IS NO HYPHEN IN THE NAME. PREVIOUSLY RECORDED ON REEL 67328 FRAME 814. ASSIGNOR(S) HEREBY CONFIRMS THE CHANGE OF NAME. Recorded May 14, 2024
From: HYNIX SEMICONDUCTOR INC.
To: SK HYNIX INC.
Reel/Frame 067412/0482 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 9, 2024
From: SK HYNIX INC.
To: MIMIRIP LLC
Reel/Frame 067369/0832 →
CHANGE OF NAME Recorded May 6, 2024
From: HYNIX-SEMICONDUCTOR INC.
To: SK HYNIX INC.
Reel/Frame 067328/0814 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 7, 2008
From: PARK, CHANG JUN
To: HYNIX SEMICONDUCTOR INC.
Reel/Frame 020616/0746 →