Semi-aqueous stripping and cleaning composition containing aminobenzenesulfonic acid
View Patent ↗The present invention relates to semi-aqueous compositions and the method using same, to remove highly cross-linked resists and etch-residues. The compositions are comprised of aminobenzenesulfonic acid, water miscible organic solvent and water.
1. A semi-aqueous stripping and cleaning composition, comprising:
a. from 0.5% to 10% of an aminobenzenesulfonic acid or its corresponding salt,
b. from 30% to 90% of a water miscible organic solvent, and
c. from 5% to 70% of water;
wherein the composition has a pH from 6 to 11.
2. The composition as claimed in claim 1 , wherein the aminobenzenesulfonic acid is selected from the group consisting of 2-aminobenzenesulfonic acid, 3-aminobenzenesulfonic acid, 4-aminobenzenesulfonic acid and mixtures thereof.
3. The composition as claimed in claim 1 , wherein the water miscible organic solvent is selected from the group consisting of a glycol ether, a furfuryl alcohol, and mixtures thereof.
4. The composition as claimed in claim 3 , wherein the water miscible organic solvent is selected from the group consisting of propylene glycol methyl ether (PGME), propylene glycol propyl ether (PGPE), tri(propylene glycol) monomethyl ether, 2-(2-butoxyethoxy)ethanol, tetrahydrofurfuryl alcohol (THFA), and mixtures thereof.
5. The composition as claimed in claim 1 , wherein the composition further comprises from 0.5% to 15% of a corrosion inhibitor selected from the group consisting of organic acid, organic acid salt, phenol, triazole, hydroxylamine derivative, fructose, ammonium sulfite, 2-aminopyrimidine, ammonium thiosulfate, glycine, tetramethylguanidine, iminodiacetic acid, dimethylacetoacetamide, and mixtures thereof.
6. The composition as claimed in claim 1 , wherein the composition further comprises from 0.5% to 10% of a quaternary ammonium compound selected from the group consisting of tetramethylammonium hydroxide (TMAH), tetraethylammonium hydroxide, tetrabutylammonium hydroxide (TBAH), tetrapropylammonium hydroxide, trimethylethylammonium hydroxide, (2-hydroxyethyl)trimethylammonium hydroxide, (2-hydroxyethyl)triethylammonium hydroxide, (2-hydroxyethyl)tripropylammonium hydroxide, (1-hydroxypropyl)trimethylammonium hydroxide, ethyltrimethylammonium hydroxide, diethyldimethylammonium hydroxide, benzyltrimethylammonium hydroxide and mixtures thereof.
7. A semi-aqueous stripping and cleaning composition, comprising:
a. from 0.5% to 10% of 2-aminobenzenesulfonic acid or its corresponding salt,
b. from 30% to 90% of a water miscible organic solvent, and
c. from 5% to 70% of water;
wherein the composition has a pH from 6 to 11.
8. The composition as claimed in claim 7 , wherein the water miscible organic solvent is selected from the group consisting of a glycol ether, a furfuryl alcohol, and mixtures thereof.
9. The composition as claimed in claim 7 , wherein the composition further comprises from 0.5% to 15% of a corrosion inhibitor selected from the group consisting of organic acid, organic acid salt, phenol, triazole, hydroxylamine derivative, fructose, ammonium sulfite, 2-aminopyrimidine, ammonium thiosulfate, glycine, tetramethylguanidine, iminodiacetic acid, dimethylacetoacetamide, and mixtures thereof.
10. The composition as claimed in claim 7 , wherein the composition further comprises from 0.5% to 10% of a quaternary ammonium compound selected from the group consisting of tetramethylammonium hydroxide (TMAH), tetraethylammonium hydroxide, tetrabutylammonium hydroxide (TBAH), tetrapropylammonium hydroxide, trimethylethylammonium hydroxide, (2-hydroxyethyl)trimethylammonium hydroxide, (2-hydroxyethyl)triethylammonium hydroxide, (2-hydroxyethyl)tripropylammonium hydroxide, (1-hydroxypropyl)trimethylammonium hydroxide, ethyltrimethylammonium hydroxide, diethyldimethylammonium hydroxide, benzyltrimethylammonium hydroxide and mixtures thereof.
11. A method of removing photoresist, etch and/or ash residue, or contaminants from a semiconductor substrate, comprising:
contacting the semiconductor substrate with a composition, comprising:
a. from 0.5% to 10% of an aminobenzenesulfonic acid or its corresponding salt,
b. from 30% to 90% of a water miscible organic solvent, and
c. from 5% to 70% of water;
wherein the composition has a pH from 6 to 11;
for a period of time sufficient to substantially remove the photoresist, etch and/or ash residue or contaminants.
12. The method as claimed in claim 11 , wherein the aminobenzenesulfonic acid is selected from the group consisting of 2-aminobenzenesulfonic acid, 3-aminobenzenesulfonic acid, 4-aminobenzenesulfonic acid and mixtures thereof.
13. The method as claimed in claim 11 , wherein the water miscible organic solvent is selected from the group consisting of a glycol ether, a furfuryl alcohol, and mixtures thereof.
14. The method as claimed in claim 13 , wherein the water miscible organic solvent is selected from the group consisting of propylene glycol methyl ether (PGME), propylene glycol propyl ether (PGPE), tri(propylene glycol) monomethyl ether, 2-(2-butoxyethoxy)ethanol, tetrahydrofurfuryl alcohol (THFA), and mixtures thereof.
15. The method as claimed in claim 11 , wherein the composition further comprises from 0.5% to 15% of a corrosion inhibitor selected from the group consisting of organic acid, organic acid salt, phenol, triazole, hydroxylamine derivative, fructose, ammonium sulfite, 2-aminopyrimidine, ammonium thiosulfate, glycine, tetramethylguanidine, iminodiacetic acid, dimethylacetoacetamide, and mixtures thereof.
16. The method as claimed in claim 11 , wherein the composition further comprises from 0.5% to 10% of a quaternary ammonium compound selected from the group consisting of tetramethylammonium hydroxide (TMAH), tetraethylammonium hydroxide, tetrabutylammonium hydroxide (TBAH), tetrapropylammonium hydroxide, trimethylethylammonium hydroxide, (2-hydroxyethyl)trimethylammonium hydroxide, (2-hydroxyethyl)triethylammonium hydroxide, (2-hydroxyethyl)tripropylammonium hydroxide, (1-hydroxypropyl)trimethylammonium hydroxide, ethyltrimethylammonium hydroxide, diethyldimethylammonium hydroxide, benzyltrimethylammonium hydroxide and mixtures thereof.
17. A method of removing photoresist, etch and/or ash residue, or contaminants from a semiconductor substrate, comprising:
contacting the semiconductor substrate with a composition, comprising:
a. from 0.5% to 10% of 2-aminobenzenesulfonic acid or its corresponding salt,
b. from 30% to 90% of a water miscible organic solvent, and
c. from 5% to 70% of water;
wherein the composition has a pH from 6 to 11;
for a period of time sufficient to substantially remove the photoresist, etch and/or ash residue or contaminants.
18. The method as claimed in claim 17 , wherein the water miscible organic solvent is selected from the group consisting of a glycol ether, a furfuryl alcohol, and mixtures thereof.
19. The method as claimed in claim 17 , wherein the composition further comprises from 0.5% to 15% of a corrosion inhibitor selected from the group consisting of organic acid, organic acid salt, phenol, triazole, hydroxylamine derivative, fructose, ammonium sulfite, 2-aminopyrimidine, ammonium thiosulfate, glycine, tetramethylguanidine, iminodiacetic acid, and dimethylacetoacetamide, and mixtures thereof.
20. The method as claimed in claim 17 , wherein the composition further comprises from 0.5% to 10% of a quaternary ammonium compound selected from the group consisting of tetramethylammonium hydroxide (TMAH), tetraethylammonium hydroxide, tetrabutylammonium hydroxide (TBAH), tetrapropylammonium hydroxide, trimethylethylammonium hydroxide, (2-hydroxyethyl)trimethylammonium hydroxide, (2-hydroxyethyl)triethylammonium hydroxide, (2-hydroxyethyl)tripropylammonium hydroxide, (1-hydroxypropyl)trimethylammonium hydroxide, ethyltrimethylammonium hydroxide, diethyldimethylammonium hydroxide, benzyltrimethylammonium hydroxide and mixtures thereof.