Semiconductor package with penetrable encapsulant joining semiconductor die and method thereof
View Patent ↗A semiconductor device is made by mounting a first semiconductor die to a first substrate, forming a first encapsulant over the first semiconductor die, and forming a second encapsulant over the first encapsulant. The second encapsulant is penetrable, thermally conductive material. A second semiconductor die is mounted to the second substrate. A bond wire electrically connects the second semiconductor die to the second substrate. A passive circuit element is mounted to the second substrate. Leading with the second encapsulant, the first substrate is pressed onto the second substrate so that the second encapsulant completely covers the second semiconductor die, bond wire, and passive circuit element. The second encapsulant is then cured. A third encapsulant is formed over the first and second substrates. A shield can be disposed over the second semiconductor die with openings for the second encapsulant to flow through when pressed onto the second substrate.
1. A method of making a semiconductor package, comprising:
providing a first substrate;
mounting a first semiconductor die to the first substrate;
forming a first encapsulant over the first semiconductor die and first substrate;
forming a second encapsulant over the first encapsulant, the second encapsulant including a penetrable, thermally conductive material;
providing a second substrate;
mounting a second semiconductor die to a front side of the second substrate;
electrically connecting the second semiconductor die to the second substrate with a bond wire;
mounting a passive circuit element to the second substrate;
leading with the second encapsulant, pressing the first substrate onto the second substrate so that the second encapsulant completely covers the second semiconductor die, bond wire, and passive circuit element; and
curing the second encapsulant.
2. The method of claim 1 , further including:
electrically connecting the first semiconductor die to the first substrate; and
electrically connecting the first substrate to the second substrate.
3. The method of claim 1 , wherein the penetrable, thermally conductive material includes a viscous gel.
4. The method of claim 1 , further including forming an interconnect structure on a backside of the second substrate, opposite the front side of the second substrate.
5. The method of claim 1 , further including forming a third encapsulant over the first and second substrates.
6. A method of making a semiconductor package, comprising:
providing a first substrate;
mounting a first semiconductor die to a front side of the first substrate;
forming a first encapsulant over the first semiconductor die and first substrate;
forming a second encapsulant over the first substrate, the second encapsulant including a penetrable material;
providing a second substrate;
mounting a second semiconductor die to a front side of the second substrate;
leading with the second encapsulant, pressing the first substrate onto the second substrate so that the second encapsulant covers the second semiconductor die; and
curing the second encapsulant.
7. The method of claim 6 , wherein the second encapsulant is formed over the front side of the first substrate or the second encapsulant is formed over a backside of the first substrate, opposite the front side of the first substrate.
8. The method of claim 6 , further including:
electrically connecting the second semiconductor die to the second substrate with a bond wire; and
mounting a passive circuit element to the second substrate.
9. The method of claim 8 , wherein the second encapsulant completely covers the second semiconductor die, bond wire, and passive circuit element.
10. The method of claim 6 , further including:
electrically connecting the first semiconductor die to the first substrate; and
electrically connecting the first substrate to the second substrate.
11. The method of claim 6 , wherein the penetrable material includes a viscous gel.
12. The method of claim 6 , further including forming an interconnect structure on a backside of the second substrate, opposite the front side of the second substrate.
13. The method of claim 6 , further including forming a third encapsulant over the first and second substrates.
14. The method of claim 6 , further including disposing a shield over the second semiconductor die, the shield having an opening for the second encapsulant to flow through when pressed onto the second substrate.
15. A method of making a semiconductor device, comprising:
providing a first substrate;
mounting a first semiconductor die to a front side of the first substrate;
forming a first encapsulant over the first semiconductor die and first substrate;
forming a second encapsulant over the first substrate, the second encapsulant includes a penetrable material;
providing a second substrate;
disposing a second semiconductor die adjacent to the second substrate;
leading with the second encapsulant, pressing the first substrate onto the second semiconductor die and second substrate so that the second encapsulant covers the second semiconductor die; and
curing the second encapsulant.
16. The method of claim 15 , wherein the second encapsulant is formed over the front side of the first substrate or the second encapsulant is formed over a backside side of the first substrate, opposite the front side of the first substrate.
17. The method of claim 15 , further including:
electrically connecting the second semiconductor die to the second substrate with a bond wire; and
mounting a passive circuit element to the second substrate.
18. The method of claim 17 , wherein the second encapsulant completely covers the second semiconductor die, bond wire, and passive circuit element.
19. The method of claim 15 , further including disposing a shield over the second semiconductor die, the shield having an opening for the second encapsulant to flow through when pressed onto the second semiconductor die and second substrate.
20. A method of making a semiconductor device, comprising:
providing a first semiconductor die;
forming an encapsulant over the first semiconductor die, the encapsulant includes a penetrable material;
providing a first substrate;
mounting a second semiconductor die to a front side of the first substrate;
leading with the encapsulant, pressing the first semiconductor die onto the second semiconductor die so that the encapsulant covers the second semiconductor die; and
curing the encapsulant.
21. The method of claim 20 , further including forming the encapsulant over a front side of the first semiconductor die or forming the encapsulant over a backside of the first semiconductor die, opposite the front side of the substrate.
22. The method of claim 20 , further including:
forming a bond wire that electrically connects the second semiconductor die to the first substrate; and
mounting a passive circuit element to the first substrate.
23. The method of claim 20 further including:
providing a second substrate;
mounting the first semiconductor die to a front side of the second substrate;
electrically connecting the first semiconductor die to the second substrate; and
electrically connecting the second substrate to the first substrate.
24. The method of claim 23 , further including forming a second encapsulant over the first semiconductor die and second substrate, the second encapsulant formed before forming the encapsulant including a penetrable material.
25. The method of claim 20 , wherein the penetrable material includes a viscous gel.