Stacked trench metal-oxide-semiconductor field effect transistor device
View Patent ↗Embodiments of the present invention are directed toward a trench metal-oxide-semiconductor field effect transistor (TMOSFET) device. The TMOSFET device includes a source-side-gate TMOSFET coupled to a drain-side-gate TMOSFET 1203 . A switching node metal layer couples the drain of the source-side-gate TMOSFET to the source of the drain-side-gate TMOSFET so that the TMOSFETs are packaged as a stacked or lateral device.
1. An integrated circuit comprising:
a drain-side-gate trench metal-oxide-semiconductor field effect transistor including;
a source region;
a plurality of gate regions disposed above said source region, wherein said plurality of gate regions are formed as substantially parallel elongated structure;
a plurality of gate insulator regions, wherein each of said plurality of gate insulator regions are disposed about a periphery of a respective one of said plurality of gate regions;
a plurality of body regions disposed above said source region and between said plurality of gate insulator regions;
a plurality of source-body contacts disposed between and electrically coupled to said source region and said plurality of body regions;
a plurality of drift regions disposed above said plurality of body regions and between said plurality of gate insulator regions; and
a plurality of drain regions disposed above said plurality of drift regions and between said plurality of gate insulator regions;
a source-side-gate trench metal-oxide-semiconductor field effect transistor; and
a metal lead coupling a drain of said source-side-gate trench metal-oxide-semiconductor field effect transistor to a source of said drain-side-gate trench metal-oxide-semiconductor field effect transistor.
2. The integrated circuit of claim 1 , wherein:
said source region comprises a heavily n-doped semiconductor;
said plurality of body regions comprise a p-doped semiconductor;
said plurality of drift regions comprise a lightly n-doped semiconductor;
said plurality of drain regions comprise a heavily n-doped semiconductor;
said plurality of gate insulator regions comprise an oxide; and
said plurality of gate regions comprise a heavily n-doped semiconductor.
3. The integrated circuit of claim 1 , wherein said drain-side-gate trench metal-oxide-semiconductor field effect transistor further comprises:
wherein said plurality of source-body contacts include a plurality of first source-body contacts electrically coupled to said plurality of body regions;
wherein said plurality of source-body contacts further include a plurality of second source-body contacts electrically coupled between said plurality of first source-body contacts and said source region; and
a source-body contact insulator region for electrically isolating said first source-body contact and said second source-body contact from one or more of said plurality of drift regions and said plurality of drain regions.
4. The integrated circuit of claim 3 , wherein:
said plurality of first source-body contacts comprise a heavily p-doped semiconductor; and
said plurality of second source-body contacts comprise a silicide.
5. A stacked trench metal-oxide-semiconductor field effect transistor device comprising:
a first drain;
a first gate disposed below said first drain;
a first gate insulator disposed about a periphery of said first gate;
a first body disposed below said first drain and between said first gate insulator;
a first source disposed between said first body and said first gate insulator, wherein said first source is separated from said first drain by said first body;
a switching node layer disposed above said first drain;
a second source disposed above said switching node;
a second gate disposed above said second source;
a second gate insulator is disposed about a periphery of said second gate;
a second body disposed above said second source and between said second gate insulator;
a second drift disposed above said second body and between said second gate insulator; and
a second drain disposed above said second drift and between said second gate insulator.
6. The stacked trench metal-oxide-semiconductor field effect transistor device according to claim 5 , wherein said first and second gates are each formed as substantially parallel elongated structures.
7. The stacked trench metal-oxide-semiconductor field effect transistor device according to claim 5 , wherein:
a first portion of said first gate is formed as substantially parallel elongated structures and a second portion of said first gate is formed as substantially normal-to-parallel elongated structures; and
a first portion of said second gate is formed as substantially parallel elongated structures and a second portion of the second gate is formed as substantially normal-to-parallel elongated structures.
8. An integrated circuit comprising:
a drain-side-gate trench metal-oxide-semiconductor field effect transistor including;
a source region;
a gate region disposed above said source region, wherein a first portion of said plurality of gate regions are formed as substantially parallel elongated structures and a second portion of said plurality of gate regions are formed as substantially normal-to-parallel elongated structures;
a gate insulator region, wherein said gate insulator region is disposed about a periphery of said gate region;
a plurality of body regions disposed above said source region and between said gate insulator region;
a plurality of first source-body contacts electrically coupled to said plurality of body regions;
a plurality of second source-body contacts electrically coupled between said plurality of first source-body contacts and said source region; and
a plurality of source-body contact insulator regions for electrically isolating said plurality of first source-body contacts and said plurality of second source-body contacts from one or more of said plurality of drift regions and said plurality of drain regions
a plurality of drift regions disposed above said plurality of body regions and between said gate insulator region;
a plurality of drain regions disposed above said plurality of drift regions and between said gate insulator regions; and
a plurality of source-body contact insulator regions for electrically isolating said plurality of first source-body contacts and said plurality of second source-body contacts from one or more of said plurality of drift regions and said plurality of drain regions
a source-side-gate trench metal-oxide-semiconductor field effect transistor; and
a metal lead coupling a drain of said source-side-gate trench metal-oxide-semiconductor field effect transistor to a source of said drain-side-gate trench metal-oxide-semiconductor field effect transistor.
9. The integrated circuit of claim 8 , wherein:
said source region comprises a heavily n-doped semiconductor;
said plurality of body regions comprise a p-doped semiconductor;
said plurality of drift regions comprise a lightly n-doped semiconductor;
said plurality of drain regions comprise a heavily n-doped semiconductor;
said gate insulator region comprises an oxide; and
said gate region comprises a heavily n-doped semiconductor.
10. The integrated circuit of claim 8 , wherein:
said plurality of first source-body contacts comprise a heavily p-doped semiconductor; and
said plurality of second source-body contacts comprise a silicide.