Light activated silicon controlled switch
View Patent ↗The present invention provides an optically triggered switch and a method of forming the optically triggered switch. The optically triggered switch includes a silicon layer having at least one trench formed therein and at least one silicon diode formed in the silicon layer. The switch also includes a first thyristor formed in the silicon layer. The first thyristor is physically and electrically isolated from the silicon diode by the trench and the first thyristor is configured to turn on in response to electromagnetic radiation generated by the silicon diode.
1. An optically triggered switch, comprising:
a silicon layer having at least one trench formed therein;
at least one silicon diode formed in the silicon layer; and
a first thyristor formed in the silicon layer, the first thyristor being physically and electrically isolated from said at least one silicon diode by said at least one trench, and the first thyristor being configured to turn on in response to electromagnetic radiation generated by said at least one silicon diode.
2. The optically triggered switch set forth in claim 1 , wherein the first thyristor comprises:
a first p-type region formed in the silicon layer;
a first n-type region formed within the first p-type region;
a second p-type region formed within the first n-type region; and
at least one second n-type region formed within the second p-type region.
3. The optically triggered switch set forth in claim 2 , wherein the first thyristor comprises:
an anode in contact with the first p-type region; and
a cathode in contact with said at least one second n-type region.
4. The optically triggered switch set forth in claim 3 , comprising a second thyristor including a third n-type region formed within the second p-type region, the third n-type region being formed such that the electromagnetic radiation generated by said at least one silicon diode turns on the second thyristor.
5. The optically triggered switch set forth in claim 4 , comprising:
an amplifying gate comprising a fourth n-type region formed in the second p-type region; and
a third p-type region coupled to the amplifying gate.
6. The optically triggered switch set forth in claim 5 , wherein a first current is generated in the first n-type region and the second p-type region by the electromagnetic radiation, and wherein the first current creates a first voltage drop that forward biases the second thyristor.
7. The optically triggered switch set forth in claim 6 , wherein the second thyristor forms a second current when the second thyristor is turned on.
8. The optically triggered switch set forth in claim 7 , wherein the second current creates a second voltage drop that forward biases the third thyristor.
9. The optically triggered switch set forth in claim 8 , wherein an emitter in the first thyristor injects electrons in response to a forward bias of the emitter.
10. The optically triggered switch set forth in claim 9 , wherein the first thyristor turns on in response to the third current exceeding a latching current of the first thyristor.