Field-effect semiconductor device and method of forming the same
View Patent ↗A semiconductor device comprises a semiconductor layer, a body region of a first conductivity type formed in the semiconductor layer and extending from a first surface of the semiconductor layer, a first region of a second conductivity type formed in the body region, and a second region of the first conductivity type formed in the body region. The first region extends from the first surface of the semiconductor layer and provides a current electrode region of the semiconductor device. The second region surrounds the first region. The doping concentration of the first conductivity type in the second region is greater than a doping concentration of the first conductivity type in the body region.
1. A semiconductor device comprising:
a semiconductor layer;
a body region of a first conductivity type formed in the semiconductor layer and extending from a first surface of the semiconductor layer;
a first region of a second conductivity type formed in the body region, the first region extending from the first surface of the semiconductor layer and providing a current electrode region of the semiconductor device; and
a second region of the first conductivity type formed in the body region;
a protection region of the first conductivity type formed in the body region and surrounding the first region, wherein the second region extends below the protection region, wherein a doping concentration of the first conductivity type in the protection region is greater than a doping concentration of the first conductivity type in the body region, and wherein the doping concentration of the first conductivity type in the protection region is greater than the doping concentration of the first conductivity type in the body region by a factor in the range of 2 to 3.
2. A semiconductor device as claimed in claim 1 , wherein the doping concentration of the protection region is equal to or less than 2e18 cm −3 .
3. A semiconductor device as claimed in claim 2 , wherein the first region, protection region and body region are all self-aligned.
4. A semiconductor device as claimed in claim 1 , wherein the doping concentrations of the first conductivity type in the protection and body regions are selected so as to provide a graded doping profile extending away from the junction with the first region, with the doping concentration of the first conductivity type being greatest at the junction with the first region.
5. A semiconductor device as claimed in claim 4 , wherein the first region, protection region and body region are all self-aligned.
6. A semiconductor device as claimed in claim 1 , wherein the protection region extends from the first surface of the semiconductor layer into the body region around and underneath the first region.
7. A semiconductor device as claimed in claim 1 , wherein the first region, protection region and body region are all self-aligned.
8. A semiconductor device as claimed in claim 1 , wherein the semiconductor device is a MOSFET device and wherein the first region is a source region of the MOSFET device.
9. A method of forming a semiconductor device comprising:
providing a semiconductor layer; forming a body region of a first conductivity type in the semiconductor layer, extending from a first surface of the semiconductor layer;
forming a first region of a second conductivity type in the body region, extending from the first surface of the semiconductor layer, the first region providing a current electrode region of the semiconductor device;
forming a second region of the first conductivity type in the body region; and
forming a protection region of the first conductivity type in the body region extending from the first surface of the semiconductor layer, wherein the protection region surrounds the first region, and the second region extends below the protection region, wherein a doping concentration of the first conductivity type in the protection region is greater than a doping concentration of the first conductivity type in the body region and wherein the doping concentration of the first conductivity type in the protection region is greater than the doping concentration of the first conductivity type in the body region by a factor in the range of 2 to 3.
10. A method as claimed in claim 9 , wherein the doping concentration of the protection region is equal to or less than 2e18 cm −3 .
11. A method as claimed in claim 10 , wherein the forming a protection region step takes place before or after the forming a first region step.
12. A method as claimed in claim 10 , wherein the step of forming the body region comprises providing material of the first conductivity type through a body opening into the semiconductor layer, and wherein the step of forming the protection region comprises providing material of the first conductivity type through the body opening into the body region, such that the body, and protection regions are aligned.
13. A method as claimed in claim 9 , wherein the forming a protection region step takes place before or after the forming a first region step.
14. A method as claimed in claim 13 , wherein the step of forming the body region comprises providing material of the first conductivity type through a body opening into the semiconductor layer, and wherein the step of forming the protection region comprises providing material of the first conductivity type through the body opening into the body region, such that the body, and protection regions are aligned.
15. A method as claimed in claim 9 , wherein the forming a protection region step comprises the step of providing at a low energy in the range of 20-60 keV a material having a doping dose in the range of 1-5e13 cm −2 of the first conductivity type into the body region.
16. A method as claimed in claim 9 , wherein the step of forming the body region comprises providing material of the first conductivity type through a body opening into the semiconductor layer, and wherein the step of forming the protection region comprises providing material of the first conductivity type through the body opening into the body region, such that the body, and protection regions are aligned.
17. A method as claimed in claim 16 , wherein the step of forming the first region comprises masking a portion of the body opening and providing material of the second conductivity type through the unmasked portion of the body opening into the semiconductor layer, such that the body, first and protection regions are aligned.
18. A method as claimed in claim 16 , wherein the step of forming the second region comprises: forming a spacer extending over a portion of the first region from a side of the body opening to form an opening; and providing material of the first conductivity type through the opening into the body region to form the second region, such that the body, first, second and protection regions are aligned.
19. A method of forming a semiconductor device comprising:
providing a semiconductor layer;
forming a body region of a first conductivity type in the semiconductor layer extending from a first surface of the semiconductor layer, wherein forming the body region comprises:
providing material of the first conductivity type into the semiconductor layer; and
subjecting the semiconductor device to a first thermal operation to drive the body region into the semiconductor layer;
forming a first region of a second conductivity type in the body region, extending from the first surface of the semiconductor layer, the first region providing a current electrode region of the semiconductor device;
forming a second region of the first conductivity type in the body region; and
forming a protection region of the first conductivity type in the body region extending from the first surface of the semiconductor layer, wherein the protection region surrounds the first region, wherein the second region extends below the protection region, and wherein a doping concentration of the first conductivity type in the protection region is greater than a doping concentration of the first conductivity type in the body region, wherein the step of forming the protection region comprises:
providing material of the first conductivity type into the body region; and
subjecting the semiconductor device to a second thermal operation to drive the protection region into the body region, wherein a temperature used in the second thermal operation is less than a temperature used in the first thermal operation.
20. A method of forming a semiconductor device comprising:
providing a semiconductor layer; forming a body region of a first conductivity type in the semiconductor layer, extending from a first surface of the semiconductor layer, wherein the step of forming the body region comprises:
providing material of the first conductivity type through a body opening into the semiconductor layer;
forming a first region of a second conductivity type in the body region, extending from the first surface of the semiconductor layer, the first region providing a current electrode region of the semiconductor device;
forming a second region of the first conductivity type in the body region, wherein the step of forming the second region comprises:
forming a spacer extending over a portion of the first region from a side of the body opening to form an opening; and
providing material of the first conductivity type through the opening into the body region to form the second region, such that the body, first, second and protection regions are aligned; and
forming a protection region of the first conductivity type in the body region extending from the first surface of the semiconductor layer, wherein the protection region surrounds the first region, and the second region extends below the protection region, wherein a doping concentration of the first conductivity type in the protection region is greater than a doping concentration of the first conductivity type in the body region, and wherein the step of forming the protection region comprises:
providing material of the first conductivity type through the body opening into the body region, such that the body, and protection regions are aligned.