Chips having rear contacts connected by through vias to front contacts
View Patent ↗A microelectronic unit is provided in which front and rear surfaces of a semiconductor element may define a thin region which has a first thickness and a thicker region having a thickness at least about twice the first thickness. A semiconductor device may be present at the front surface, with a plurality of first conductive contacts at the front surface connected to the device. A plurality of conductive vias may extend from the rear surface through the thin region of the semiconductor element to the first conductive contacts. A plurality of second conductive contacts can be exposed at an exterior of the semiconductor element. A plurality of conductive traces may connect the second conductive contacts to the conductive vias.
1. A microelectronic unit, comprising:
a semiconductor element having a front surface, a rear surface remote from the front surface, the front and rear surfaces defining a thin region having a first thickness and a thicker region having a second thickness being at least about twice the first thickness, the semiconductor element including a semiconductor device at the front surface, a plurality of first conductive contacts at the front surface connected to the device, and a plurality of conductive vias extending from the rear surface through the thin region of the semiconductor element to the first conductive contacts;
a plurality of second conductive contacts exposed at an exterior of the semiconductor element; and
a plurality of conductive traces connecting the second conductive contacts to the conductive vias.
2. A microelectronic unit as claimed in claim 1 , wherein the second conductive contacts overlie the thicker region at the rear surface.
3. A microelectronic unit as claimed in claim 2 , further comprising a cover element overlying at least a portion of the front surface at which the semiconductor device is disposed.
4. A microelectronic unit as claimed in claim 3 , further comprising a dielectric layer overlying the rear surface, wherein the second conductive contacts and conductive traces overlie the dielectric layer.
5. A microelectronic unit as claimed in claim 4 , wherein the dielectric layer has a compliant property.
6. An assembly including a microelectronic unit as claimed in claim 5 and a circuit panel having terminals joined to the second conductive contacts, wherein a product of a modulus of elasticity of the dielectric layer and a thickness of the dielectric layer is sufficient to compensate for thermal expansion mismatch between the microelectronic unit and the circuit panel.
7. A microelectronic unit as claimed in claim 6 , wherein the cover element has an outer surface remote from the front face of the semiconductor element and the cover element includes a dielectric material exposed at the outer surface.
8. A microelectronic unit as claimed in claim 1 , wherein the plurality of second conductive contacts include a plurality of metallic bumps.
9. A camera module including a microelectronic unit as claimed in claim 3 , wherein the semiconductor device includes an imaging area, the camera module further comprising an optical unit having an optical element mounted to the cover element in registration with the imaging area.
10. A microelectronic unit as claimed in claim 1 , wherein the semiconductor element includes a plurality of chips joined together at a plurality of dicing lanes.
11. A microelectronic unit as claimed in claim 1 , wherein the semiconductor element includes a single chip.
12. A microelectronic unit as claimed in claim 1 , wherein the semiconductor element has peripheral edge surfaces extending between the front surface and the rear surface and the second conductive contacts are disposed adjacent to the edge surfaces.