Pulsed-continuous etching
View Patent ↗In a system and method of etching a sample disposed in an etching chamber, a plurality of separately stored charges of an etching gas is discharged, one at a time, into a sample etching chamber. The discharge of each charge of etching gas occurs such that a momentary overlap exists in the end discharge of one charge of etching gas with the beginning discharge of another charge of etching gas, whereupon the desired flow of etching gas into the etching chamber is maintained. During discharge of one charge of etching gas, a previously discharged charge of etching gas is recharged. The process of discharging a plurality of separately stored charges of an etching gas, one at a time, and recharging at least one previously discharged charges of etching gas during the discharge of at least one charge of etching gas continues until the sample is etched to a desired extent.
1. A method of etching a sample via an etching system having an etching gas source, a main chamber where etching of a sample occurs, a first expansion chamber, a second expansion chamber, a flow controller, means for connecting each expansion chamber to the flow controller and to the source of etching gas, and a pressure controller for setting a pressure of the etching gas in the main chamber to a setpoint pressure, the method comprising:
(a) controlling the means for connecting to charge the first expansion chamber with a suitable amount of etching gas from the etching gas source to sustain a constant flow of etching gas to the main chamber, and once charged is isolated therefrom;
(b) controlling the means for connecting to connect the charged first expansion chamber to the main chamber via the flow controller, whereupon the charge of etching gas in the first expansion chamber flows to the main chamber via the flow controller such that the pressure of etching gas inside the first expansion chamber decreases while the pressure in the main chamber is at the setpoint pressure;
(c) while etching gas in the first expansion chamber is flowing to the main chamber via the flow controller, controlling the means for connecting such that the second expansion chamber is charged with a suitable amount of etching gas from the etching gas source to sustain a constant flow of etching gas to the main chamber, and once charged is isolated therefrom;
(d) following step (c), controlling the means for connecting to isolate the first expansion chamber from the main chamber and to connect the second expansion chamber to the main chamber via the flow controller before a pressure of the etching gas in the first expansion chamber decreases below a level sufficient to sustain a constant flow of etching gas to the main chamber at the setpoint pressure;
(e) following step (d), while etching gas in the second expansion chamber is flowing to the main chamber via the flow controller, controlling the means for connecting such that the first expansion chamber is charged with a suitable amount of etching gas from the etching gas source to sustain a constant flow of etching gas to the main chamber, and once charged is isolated therefrom; and
(f) following step (e), controlling the means for connecting to isolate the second expansion chamber from the main chamber and to connect the first expansion chamber to the main chamber via the flow controller before a pressure of the etching gas in the second expansion chamber decreases below a level sufficient to sustain a constant flow of etching gas to the main chamber at the setpoint pressure.
2. The method of claim 1 , further including repeating steps (c)-(f).
3. The method of claim 1 , wherein, in steps (d) and (f), the means for connecting is controlled to simultaneously connect the first and second expansion chambers to the main chamber.
4. The method of claim 3 , wherein the first and second expansion chambers are simultaneously connected to the main chamber momentarily.
5. The method of claim 3 , wherein:
the etching system includes means for preventing etching gas from flowing from the first expansion chamber to the second expansion chamber, and vice versa, when the first and second expansion chambers are simultaneously connected to the main chamber;
in step (d), the means for preventing is operative for preventing the flow etching gas from the second expansion chamber into the first expansion chamber when the first and second expansion chambers are simultaneously connected to the main chamber; and
in step (f), the means for preventing is operative for preventing the flow etching gas from the first expansion chamber into the second expansion chamber when the first and second expansion chambers are simultaneously connected to the main chamber.
6. The method of claim 1 , wherein, at least one of step (a), step (c) and step (e) includes controlling the means for connecting to charge the corresponding expansion chamber with an inert gas from an inert gas source coupled to the means for connecting.
7. The method of claim 6 , wherein the inert gas is nitrogen, helium, argon, xenon or some combination thereof.