To provide a polishing pad which is insusceptible to clogging of groove with abrasive particles and grinding dusts during polishing, and leads to little decrease in polishing rate even after long-term continuous use. A polishing pad of the present invention has a polishing layer formed of polyurethane resin foam having fine-cells, and asperity structure formed in a polishing surface of the polishing layer, and is featured in that the polyurethane resin foam is a reaction cured product between isocyanate-terminated prepolymer containing high-molecular-weight polyol component and isocyanate component, and a chain extender, and contains a silicon-based surfactant having combustion residue of not less than 8 wt %.
1. A polishing pad having a polishing layer formed of a polyurethane resin foam having fine-cells, a polishing surface of the polishing layer being formed with an asperity structure,
wherein the polyurethane resin foam is a reaction cured product between an isocyanate-terminated prepolymer containing a high-molecular-weight polyol component and an isocyanate component and a chain extender, and the polyurethane resin foam further comprises a silicone-based surfactant having a combustion residue of not less than 8 wt %.
2. The polishing pad according to claim 1 , wherein the silicone-based surfactant is a copolymer of polyalkylsiloxane and polyether having a molar ratio of ethyleneoxide to propyleneoxide in the polyether in the range of 60/40 to 100/0.
3. The polishing pad of claim 1 , wherein the polyurethane resin foam contains 0.05 wt % or more and less than 10 wt % of the silicone-based surfactant.
4. The polishing pad of claim 1 , wherein the polyurethane resin foam has an average cell diameter of 50 μm or less and a cell number of 200 cells/mm 2 or more.
5. A method of producing a semiconductor device comprising polishing a surface of a semiconductor wafer with the polishing pad of claim 1 .