Semiconductor device
View Patent ↗The invention provides a semiconductor device which has a capacitor element therein to achieve size reduction of the device, the capacitor element having larger capacitance than conventional. A semiconductor integrated circuit and pad electrodes are formed on the front surface of a semiconductor substrate. A second insulation film is formed on the side and back surfaces of the semiconductor substrate, and a capacitor electrode is formed between the back surface of the semiconductor substrate and the second insulation film, contacting the back surface of the semiconductor substrate. The second insulation film is covered by wiring layers electrically connected to the pad electrodes, and the wiring layers and the capacitor electrode overlap with the second insulation film being interposed therebetween. Thus, the capacitor electrode, the second insulation film and the wiring layers form capacitors.
1. A semiconductor device comprising:
a semiconductor substrate;
a semiconductor integrated circuit formed on a front surface of the semiconductor substrate;
a pad electrode disposed on the side of the front surface so as to be electrically connected to the semiconductor integrated circuit, the pad electrode having a top surface and a bottom surface opposite from the top surface, the pad electrode being disposed on the side of the front surface of the semiconductor substrate so that the bottom surface is closer to the front surface of the semiconductor substrate than the top surface;
a capacitor electrode disposed on a back surface of the semiconductor substrate;
an insulation film disposed on the capacitor electrode; and
a wiring layer disposed on the insulation film and physically in direct contact with the bottom surface of the pad electrode,
wherein the capacitor electrode, the insulation film and the wiring layer are configured to form a capacitor, and
the capacitor electrode, the insulation film and the wiring layer extend from the back surface of the semiconductor substrate to a side surface of the semiconductor substrate so that the extended portions of the capacitor electrode, the insulation film and the wiring layer form an additional capacitance to the capacitor.
2. The semiconductor device of claim 1 , further comprising a supporting body attached to the semiconductor substrate.
3. The semiconductor device of claim 1 , wherein the capacitor electrode and the semiconductor substrate are configured to receive a reference voltage.
4. The semiconductor device of claim 1 , further comprising a front surface insulating film disposed on the front surface of the semiconductor substrate, wherein the pad electrode is disposed on the front surface insulating film.
5. A semiconductor device comprising:
a semiconductor substrate;
a semiconductor integrated circuit formed on a front surface of the semiconductor substrate;
a pad electrode disposed on the side of the front surface so as to be electrically connected to the semiconductor integrated circuit;
a first capacitor electrode disposed on a back surface of the semiconductor substrate;
a first insulation film disposed on the first capacitor electrode;
a second capacitor electrode disposed on the first insulation film;
a second insulation film disposed on the second capacitor electrode;
a wiring layer disposed on the second insulation film and electrically connected to the pad electrode,
wherein the first capacitor electrode, the first insulation film, the second capacitor electrode, the second insulation film and the wiring layer form on the back surface of the semiconductor substrate a stack of three conducting layers and two insulation layers,
the wiring layer is electrically connected to the second capacitor electrode through an opening formed in the second insulation film, and
the first capacitor electrode, the first insulation film and the second capacitor electrode are configured to form a capacitor.
6. The semiconductor device of claim 5 , wherein the semiconductor substrate has a via hole penetrating the semiconductor substrate, and the first insulation film and the wiring layer extend from the back surface of the semiconductor substrate into the via hole.
7. The semiconductor device of claim 5 , further comprising a supporting body attached to the semiconductor substrate.
8. The semiconductor device of claim 5 , wherein the capacitor electrode and the semiconductor substrate are configured to receive a reference voltage.
9. The semiconductor device of claim 5 , further comprising a front surface insulating film disposed on the front surface of the semiconductor substrate, wherein the pad electrode is disposed on the front surface insulating film.