Methods of manufacturing semiconductor devices having contact plugs in insulation layers
Methods of manufacturing semiconductor devices are provided in which a first contact plug is formed on a first active region in a substrate and a second contact plug is formed on a second active region in the substrate. A height of an upper surface of the second contact plug from the substrate is greater than a height of an upper surface of the first contact plug from the substrate. A third contact plug is formed on the second contact plug. A first spacer is formed on a side surface of the third contact plug. A third interlayer insulation layer is formed that covers the third contact plug. The third interlayer insulation layer is patterned to form a third opening that exposes the first contact plug. A fourth contact plug is formed in the third opening that is electrically connected to the first contact plug.
1. A method of manufacturing a semiconductor device, the method comprising:
forming a first interlayer insulation layer on a substrate that includes a first active region and a second active region;
patterning the first interlayer insulation layer to form a first opening that exposes the first active region and a second opening that exposes the second active region;
depositing a first conductive layer in the first and second openings and on the first interlayer insulation layer;
patterning the first conductive layer to form a first contact plug and a second contact plug, wherein a height of a top surface of the second contact plug from the substrate is greater than a height of a top surface of the first contact plug from the substrate;
forming a second interlayer insulation layer on the first interlayer insulation layer and the first contact plug, wherein a top surface of the second interlayer insulation layer is coplanar with the top surface of the second contact plug;
forming a third contact plug on the second contact plug that is electrically connected to the second contact plug, wherein a silicide layer is formed at an interface between the second contact plug and third contact plug, wherein a height of a lower surface of the silicide layer from the substrate is greater than a height of an upper surface of the first contact plug from the substrate;
forming a capping layer on the third contact plug;
forming a first spacer on a side surface of the third contact plug, wherein the first spacer covers an entirety of a side portion of the silicide layer and extends from the silicide layer to the second contact plug;
forming a third interlayer insulation layer on the second interlayer insulation layer, the third interlayer insulation layer covering the third contact plug;
patterning the third interlayer insulation layer to form a third opening that exposes the first contact plug; and
forming a fourth contact plug that is electrically connected to the first contact plug by depositing a third conductive material in the third opening.
2. The method of claim 1 , wherein the forming of the third contact plug and the capping layer further comprises forming a groove spacing the second contact plug from the second interlayer insulation layer by over-etching a portion of the second contact plug such that a region of the second contact plug that is adjacent to the third contact plug has a smaller cross-sectional width than does a region of the second contact plug that is remote from the third contact plug.
3. The method of claim 1 , further comprising forming a second spacer in the groove on the side surface of the third contact plug.
4. The method of claim 1 , wherein the first spacer has etching selectivity with respect to the third interlayer insulation layer.
5. The method of claim 4 , wherein the third opening is formed using the first spacer as an etching mask.
6. The method of claim 5 , wherein the fourth contact plug is formed by partly etching the third interlayer insulation layer to form a groove and then further etching the exposed third interlayer insulation layer in the groove using the first spacer as an etching mask.
7. A method of manufacturing a semiconductor device, the method comprising:
forming a first contact plug on a first active region in a substrate and forming a second contact plug on a second active region in the substrate, wherein a height of an upper surface of the second contact plug from the substrate is greater than a height of an upper surface of the first contact plug from the substrate;
forming a third contact plug on the second contact plug, wherein a silicide layer is formed at an interface between the second contact plug and third contact plug, wherein a height of a lower surface of the silicide layer from the substrate is greater than a height of an upper surface of the first contact plug from the substrate;
forming a first spacer on a side surface of the third contact plug, wherein the first spacer covers an entirety of a side portion of the silicide layer and extends from the silicide layer to the second contact plug;
forming a third interlayer insulation layer that covers the third contact plug;
patterning the third interlayer insulation layer to form a third opening that exposes the first contact plug; and
forming a fourth contact plug in the third opening that is electrically connected to the first contact plug.
8. The method of claim 7 , further comprising forming a groove that spaces the second contact plug from the second interlayer insulation layer by over-etching a portion of the second contact plug such that a region of the second contact plug that is adjacent to the third contact plug has a smaller cross-sectional width than does a region of the second contact plug that is remote from the third contact plug.
9. The method of claim 8 , further comprising forming a second spacer in the groove on a side surface of the third contact plug.