Semiconductor device and manufacturing method thereof
View Patent ↗A semiconductor device with improved moisture resistance and its manufacturing method as well as a manufacturing method of a semiconductor device which simplifies a manufacturing process and improves productivity are offered. This invention offers a CSP type semiconductor device and its manufacturing method that can prevent moisture and the like from infiltrating into it to attain high reliability by covering a side surface of a semiconductor chip with a thick protection layer. This invention also offers a highly productive manufacturing method of semiconductor devices by which a supporter bonded to semiconductor dice is etched from a back surface-side of the supporter so that the semiconductor devices can be separated without dicing.
1. A semiconductor device comprising:
a semiconductor substrate comprising a circuit element formed in a top surface thereof;
a first insulation film disposed on the top surface of the semiconductor substrate;
a metal pad connected to the circuit element and disposed at least partially on the first insulation film adjacent a lateral edge of the top surface;
a second insulation film disposed on a side surface and a bottom surface of the semiconductor substrate;
a metal wiring disposed on the second insulation film so as to be connected to a bottom portion of the metal pad, the metal wiring extending from the bottom surface to the side surface of the semiconductor substrate;
a protection layer covering the metal wiring so that a thickness of an edge portion of the protection layer is larger than a sum of thicknesses of the semiconductor substrate, the first and second insulation films and the metal wiring; and
a conductive terminal connected to the metal wiring through an opening formed in the protection layer.
2. A semiconductor device comprising:
a semiconductor substrate comprising a circuit element formed in a top surface thereof;
a first insulation film disposed on the top surface of the semiconductor substrate;
a metal pad connected to the circuit element and disposed at least partially on the first insulation film adjacent a lateral edge of the top surface;
a second insulation film disposed on a side surface and a bottom surface of the semiconductor substrate;
a metal wiring disposed on the second insulation film so as to be connected to a bottom portion of the metal pad, the metal wiring extending from the bottom surface to the side surface of the semiconductor substrate;
a protection layer comprising a first protection layer and a second protection layer and covering the metal wiring so as to make a surface of the protection layer flat at the metal pad; and
a conductive terminal connected to the metal wiring through an opening formed in the protection layer.
3. The semiconductor device of claim 1 , further comprising a supporter bonded to the top surface of the semiconductor substrate so as to cover the top surface of the semiconductor substrate and the metal pad.
4. A semiconductor device comprising:
a first semiconductor device comprising a semiconductor substrate comprising a circuit element formed in a top surface thereof, a first insulation film disposed on the top surface of the semiconductor substrate, a metal pad connected to the circuit element and disposed at least partially on the first insulation film adjacent a lateral edge of the top surface, a second insulation film disposed on a side surface and a bottom surface of the semiconductor substrate, a metal wiring disposed on the second insulation film so as to be connected to a bottom portion of the metal pad and extending from the bottom surface to the side surface of the semiconductor substrate, a protection layer covering the metal wiring, and a conductive terminal connected to the metal wiring through an opening formed in the protection layer; and
a second semiconductor device comprising a metal pad formed on a top surface thereof,
wherein the first semiconductor device is stacked on the second semiconductor device so that the conductive terminal of the first semiconductor device is in contact with the metal pad of the second semiconductor device and that an edge portion of the protection layer is in contact with the top surface of the second semiconductor device.
5. A semiconductor device comprising:
a semiconductor substrate comprising a circuit element formed in a top surface thereof;
a first insulation film disposed on the top surface of the semiconductor substrate;
a metal pad connected to the circuit element and disposed at least partially on the first insulation film adjacent a lateral edge of the top surface;
a second insulation film disposed on a side surface and a bottom surface of the semiconductor substrate;
a metal wiring disposed on the second insulation film so as to be connected to a bottom portion of the metal pad, the metal wiring extending from the bottom surface to the side surface of the semiconductor substrate;
a protection layer disposed on the metal wiring;
a conductive terminal connected to the metal wiring through an opening formed in the protection layer; and
a conductive film disposed on the protection layer so as to make a surface of the conductive film flat on the metal pad.
6. The semiconductor device of claim 5 , further comprising a supporter bonded to the top surface of the semiconductor substrate so as to cover the top surface of the semiconductor substrate and the metal pad.