Serial link output stage differential amplifier and method
View Patent ↗Protection for the transmission of higher amplitude outputs required of differential amplifiers formed by thin oxide transistors with limited maximum voltage tolerance used where compliance with communication protocol standards requires handling voltages which may, in transition, exceed desirable levels is provided by limiting the voltage across any two device terminals under power down conditions.
1. Apparatus comprising:
a differential amplifier circuit having a coupled pair of field effect transistor semiconductor devices;
a biasing circuit; and
a coupling circuit operatively connected to said differential amplifier circuit and said biasing circuit and having a field effect transistor semiconductor device;
said coupling circuit field effect transistor semiconductor device being coupled with the source and body terminals of said coupled pair of field effect transistor semiconductor devices;
said coupling circuit recognizing a powering down event for said differential amplifier circuit wherein a biasing voltage is applied from said biasing circuit to said differential amplifier circuit during the recognized powering down event, the biasing voltage protecting the differential amplifier circuit against degradation otherwise possible due to voltages imposed during the powering down event.
2. Apparatus according to claim 1 wherein said differential amplifier comprises a coupled pair of field effect transistor semiconductor devices.
3. Apparatus comprising:
a differential amplifier circuit;
a biasing circuit;
a coupling circuit operatively connected to said differential amplifier circuit and said biasing circuit;
said coupling circuit recognizing a powering down event for said differential amplifier circuit wherein a biasing voltage is applied from said biasing circuit to said differential amplifier circuit during the recognized powering down event, the biasing voltage protecting the differential amplifier circuit against degradation otherwise possible due to voltages imposed during the powering down event.
4. Apparatus according to claim 3 wherein said differential amplifier comprises a coupled pair of field effect transistor semiconductor devices.
5. Apparatus according to claim 3 wherein said differential amplifier comprises a coupled pair of complementary metal oxide field effect transistor semiconductor devices.
6. Apparatus according to claim 3 wherein said coupling circuit comprises a field effect transistor semiconductor device.
7. Apparatus according to claim 6 wherein said coupling circuit field effect transistor semiconductor device is coupled with the source and gate terminals of a coupled pair of field effect transistor semiconductor devices.