Structure for interconnect structure containing various capping materials for electrical fuse and other related applications
View Patent ↗A design structure is provided for interconnect structures containing various capping materials for electrical fuses and other related applications. The structure includes a first interconnect structure having a first interfacial structure and a second interconnect structure adjacent to the first structure. The second interconnect structure has second interfacial structure different from the first interfacial structure.
1. A structure, comprising:
a first interconnect structure having a first interfacial structure connecting to an underlying interconnect material; and
a second interconnect structure adjacent to the first interconnect structure and having a second interfacial structure, wherein the second interfacial structure comprises a metal layer on a conducting material that is within a feature, and the second interfacial structure is different from the first interfacial structure.
2. The structure of claim 1 , wherein the first interconnect structure is a wiring interconnect structure and the second interconnect structure is an e-fuse.
3. The structure of claim 2 , wherein the first interfacial structure has a greater electromigration (EM) resistance than the second interfacial structure.
4. The structure of claim 1 , further comprising a third interconnect structure having a third interfacial structure, different from the first and second interfacial structure.
5. The structure of claim 1 , wherein the first interfacial structure includes a liner and a metal layer embedded in a dielectric material.
6. A structure, comprising:
a first interconnect structure having a first interfacial structure; and
a second interconnect structure adjacent to the first interconnect structure and having a second interfacial structure different from the first interfacial structure, wherein
the first interconnect structure is a wiring interconnect structure and the second interconnect structure is an e-fuse, and
the first interfacial structure includes a metal layer and a capping layer, the capping layer comprising SiN, and the second interfacial structure includes a metal layer and a capping layer, the capping layer comprising one of: Co(W,P,B), Ru, Ir, Rh and Pt.
7. A structure, comprising:
a first interconnect structure having a first interfacial structure; and
a second interconnect structure adjacent to the first interconnect structure and having a second interfacial structure different from the first interfacial structure, wherein
the first interconnect structure is a wiring interconnect structure and the second interconnect structure is an e-fuse, and
the second interfacial structure includes a same material as the first interfacial structure with degraded interfacial properties between a metal layer and capping layer.
8. The structure of claim 7 , wherein the degraded interfacial properties is a treatment from one of radiation sources and laser light.
9. A structure, comprising:
a first interconnect structure having a first interfacial structure connecting to an underlying interconnect material; and
a second interconnect structure adjacent to the first interconnect structure and having a second interfacial structure, the second interfacial structure comprising a metal layer, the second interfacial structure is different from the first interfacial structure,
wherein the second interfacial structure includes the metal layer and a capping layer different from a capping layer of the first interfacial structure.
10. A structure, comprising:
a first interconnect structure having a first interfacial structure connecting to an underlying interconnect material; and
a second interconnect structure adjacent to the first interconnect structure and having a second interfacial structure, the second interfacial structure comprising a metal layer, the second interfacial structure is different from the first interfacial structure,
wherein the second-interfacial structure has greater fuse efficiency than the first interfacial structure.
11. The structure of claim 10 , wherein the second interfacial structure is configured to provide void formation due to EM effects.
12. A structure, comprising:
a first interconnect structure having a first interfacial structure connecting to an underlying interconnect material; and
a second interconnect structure adjacent to the first interconnect structure and having a second interfacial structure, the second interfacial structure comprising a metal layer, the second interfacial structure is different from the first interfacial structure,
wherein the first interconnect structure having a first interfacial structure, the first interfacial structure includes a layer of SiN which is deposited over a dielectric material and a metal layer embedded in the dielectric material.
13. The structure of claim 12 , wherein the second interconnect structure includes the metal layer which is a conducting material, and a metal cap overlying the conducting metal and surrounded by SiN material deposited on a dielectric material.
14. A structure, comprising:
a first interconnect structure having a first interfacial structure connecting to an underlying interconnect material;
a second interconnect structure adjacent to the first interconnect structure and having a second interfacial structure, the second interfacial structure comprising a metal layer, the second interfacial structure is different from the first interfacial structure; and
a third interconnect structure having a third interfacial structure or metal deposited directly on a conducting material, the metal of the third interfacial structure is different than the metal of the second interfacial structure.
15. A structure, comprising:
a first interconnect structure having a first interfacial structure connecting to an underlying interconnect material;
a second interconnect structure adjacent to the first interconnect structure and having a second interfacial structure, the second interfacial structure comprising a metal layer, the second interfacial structure is different from the first interfacial structure; and
a third interconnect structure having a third interfacial structure which includes damage that is different than damage of the second interfacial structure.
16. The structure of claim 15 , wherein the metal of the second interfacial structure and metal formed on the third interfacial structure overly the damage.
17. A structure, comprising:
a first macro having a metal wiring layer on a first level electrically connected to a metal wiring layer on a second layer and a capping layer over the metal wiring layer on the second layer which has a first electromigration (EM) resistance; and
a second macro adjacent the first macro, the second macro having a metal wiring layer on the first level electrically connected to a metal wiring layer on the second layer, and a capping layer over the metal wiring layer on the second layer which has a second electromigration (EM) resistance different from the first electromigration (EM) resistance.