Image sensor and method for manufacturing the same

1. An image sensor comprising:

a pixel region defined on a substrate;

an interlayer dielectric on the substrate, the interlayer dielectric comprising a trench above the pixel region;

a color filter within the trench;

a planarization layer on the color filter, and a microlens on the color filter, wherein a top surface of the interlayer dielectric and an underside of the microlens are at the same height.

2. The image sensor according to claim 1 , wherein the microlens is on the planarization layer.

3. The image sensor according to claim 1 , wherein a depth of the trench is equal to a sum of the thicknesses of the color filter and the planarization layer.

4. A method for manufacturing an image sensor, the method comprising:

defining a pixel region on a substrate;

forming an interlayer dielectric on the substrate;

forming a trench in the interlayer dielectric corresponding to the pixel region;

forming a color filter in the trench;

forming a planarization layer on the color filter; and

forming a microlens on the color filter, wherein forming the microlens comprises forming the microlens such that a top surface of the interlayer dielectric and an underside of the microlens are at the same height.

5. The method according to claim 4 , wherein forming the trench comprises selectively etching the interlayer dielectric above the pixel region.

6. The method according to claim 4 , wherein the microlens is formed on the planarization layer.

7. The method according to claim 4 ,

wherein forming the trench comprises selectively etching the interlayer dielectric above the pixel region until the trench has a depth equal to a sum of the thicknesses of the color filter and the planarization layer.