Device with precharge/homogenize circuit

1. A device, comprising:

a first precharge/homogenize circuit with at least one switching element acting as a homogenizer and at least two switching elements acting as prechargers;

at least one second precharge/homogenize circuit with at least one switching element acting as a homogenizer and at least two switching elements acting as prechargers,

wherein a diffusion region of the switching element acting as a homogenizer of the first precharge/homogenize circuit is separated from a diffusion region of the switching elements acting as prechargers of the first precharge/homogenize circuit,

wherein the switching elements acting as prechargers of the first precharge/homogenize circuit and of the second precharge/homogenize circuit are arranged in a row side by side, and

wherein the diffusion region of the switching element acting as a homogenizer of the first precharge/homogenize circuit is separated from a diffusion region of the switching element acting as homogenizer of the second precharge/homogenize circuit.

2. The device of claim 1 , wherein the at least two switching elements acting as prechargers of the first precharge/homogenize circuit are arranged in the same diffusion region.

3. The device of claim 1 , wherein the switching elements acting as homogenizers of the first precharge/homogenize circuit and of the second precharge/homogenize circuit are arranged in a further row side by side.

4. The device of claim 3 , wherein the row of switching elements acting as prechargers is arranged in parallel to the further row of the switching elements acting as homogenizers.

5. The device of claim 1 , wherein the switching elements acting as prechargers of the first precharge/homogenize circuit and of the second precharge/homogenize circuit are arranged in the same diffusion region.

6. The device of claim 1 , wherein the switching elements are transistors.

7. The device of claim 6 , wherein the transistors are NMOS-FETs.

8. The device of claim 6 , wherein the transistors are PMOS-FETs.

9. The device of claim 1 , comprising:

a first line; and

a second line parallel to the first line,

wherein each switching element acting as a precharger of the first precharge/homogenize circuit and of the second precharge/homogenize circuit includes a gate directly coupled to the first line, and

wherein each switching element acting as a homogenizer of the first precharge/homogenize circuit and of the second precharge/homogenize circuit includes a gate directly coupled to the second line.

10. A memory device module comprising:

a sense amplifier;

a first precharge/homogenize circuit including a first homogenizer switching element having a first diffusion region and a first precharger switching element having a second diffusion region;

a second precharge/homogenize circuit including a second homogenizer switching element having a third diffusion region and a second precharger switching element having the second diffusion region;

wherein the first diffusion region is separated from the second diffusion region;

wherein the third diffusion region is separated from the first diffusion regions;

wherein the first and second precharger switching elements are arranged in a first row side by side;

wherein the first and second homogenizer switching elements are arranged in a second row side by side; and

a memory array coupled to the sense amplifier.

11. The memory device module of claim 10 , comprising:

a first line; and

a second line parallel to the first line,

wherein each of the first and second precharger switching elements includes a gate directly coupled to the first line, and

wherein each of the first and second homogenizer switching elements includes a gate directly coupled to the second line.

12. An electronic system comprising:

a semiconductor device including a first precharge/homogenize circuit comprising:

at least one first switching element acting as a homogenizer; and

at least one first switching element acting as a precharger,

wherein a first diffusion region of the first switching element acting as a homogenizer is separated from a second diffusion region of the first switching element acting as a precharger,

wherein the semiconductor device includes a second precharge/homogenize circuit comprising:

at least one second switching element acting as a homogenizer; and

at least one second switching element acting as a precharger,

wherein a first diffusion region of the second switching element acting as a homogenizer is separated from a second diffusion region of the second switching element acting as a precharger,

wherein the first and second switching elements acting as prechargers are arranged in a first row side by side,

wherein the first and second switching elements acting as homogenizers are arranged in a second row side by side; and

wherein the second row is parallel to the first row.

13. The electronic system of claim 12 , comprising:

a first line; and

a second line parallel to the first line,

wherein each of the first and second switching elements acting as a precharger includes a gate directly coupled to the first line, and

wherein each of the first and second switching elements acting as a homogenizer includes a gate directly coupled to the second line.

14. A method for operating a semiconductor device, comprising:

providing at least one first precharge/homogenize circuit connected with at least one first bit line and at least one complementary first bit line, comprising:

at least one first switching element acting as a homogenizer; and

at least one first switching element acting as a precharger,

wherein a diffusion region of the first switching element acting as a homogenizer is separated from a diffusion region of the first switching element acting as a precharger, and

switching on the precharge/homogenize circuit for precharging and homogenizing potentials present at the first bit lines; and

providing at least one second precharge/homogenize circuit connected with at least one second bit line and at least one complementary second bit line, comprising:

at least one second switching element acting as a homogenizer; and

at least one second switching element acting as a precharger,

wherein a diffusion region of the second switching element acting as a homogenizer is separated from a diffusion region of the second switching element acting as a precharger,

wherein the first and second switching elements acting as prechargers are arranged in a first row side by side,

wherein the first and second switching elements acting as homogenizers are arranged in a second row side by side;

wherein the second row is parallel to the first row; and

wherein the diffusion region of the first switching element acting as the homogenizer of the first precharge/homogenize circuit is separated from the diffusion region of the second switching element acting as the homogenizer of the second precharge/homogenize circuit.

15. The method of claim 14 , comprising:

providing a first line; and

providing a second line parallel to the first line,

wherein each of the first and second switching elements acting as a precharger includes a gate directly coupled to the first line, and

wherein each of the first and second switching elements acting as a homogenizer includes a gate directly coupled to the second line.

16. An electronic system comprising:

a first line;

a second line parallel to the first line;

a first precharge/homogenize circuit including a first homogenizer switching element having a first diffusion region and a first gate, and a first precharger switching element having a second diffusion region and a second gate; and

a second precharge/homogenize circuit including a second homogenizer switching element having a third diffusion region and a third gate, and a second precharger switching element having a fourth diffusion region and a fourth gate,

wherein the first diffusion region is separated from the second diffusion region,

wherein the third diffusion region is separated from the fourth diffusion region,

wherein the first line is directly coupled to the first gate and the third gate, and

wherein the second line is directly coupled to the second gate and the fourth gate.

17. The system of claim 16 , wherein the first precharge/homogenize circuit comprises at least two switching elements acting as prechargers.

18. The system of claim 17 , wherein the switching elements are transistors.

19. The system of claim 17 , wherein the at least two switching elements acting as prechargers are arranged in the same diffusion region.