Integrated circuit including an insulating structure below a source/drain region and method
View Patent ↗An integrated circuit including an insulating structure below a source/drain region and a method. One embodiment includes a memory cell with an access transistor and a storage element. A first source/drain region of the access transistor is electrically coupled to the storage element. A first insulating structure is disposed between the first source/drain region and a first portion of a semiconductor substrate, the first portion being arranged below the first source/drain region. A channel region of the access transistor is formed between the first and a second source/drain region of the access transistor in an active area being electrically coupled to the first portion of the semiconductor substrate.
1. An integrated circuit comprising:
a transistor comprising:
a first source/drain region,
a channel region formed between the first and a second source/drain region in an active area of a semiconductor substrate, and
a gate electrode, configured to control a conductivity of the channel region, wherein the gate electrode is arranged adjacent to three sides of the channel region; and
a first insulating structure being part of the integrated circuit and being disposed between the first source/drain region and a first portion of the semiconductor substrate, the first portion being arranged below the first source/drain region;
wherein the active area is electrically coupled to the first portion of the semiconductor substrate; and
wherein an upper surface of the first source/drain region is formed above an upper surface of the semiconductor substrate.
2. An integrated circuit comprising:
a transistor comprising:
a first source/drain region,
a channel region formed between the first and a second source/drain region in an active area of a semiconductor substrate, and
a gate electrode, configured to control a conductivity of the channel region, wherein the gate electrode is arranged adjacent to three sides of the channel region; and
a first insulating structure being part of the integrated circuit and being disposed between the first source/drain region and a first portion of the semiconductor substrate, the first portion being arranged below the first source/drain region;
wherein the active area is electrically coupled to the first portion of the semiconductor substrate; and
wherein an upper surface of the second source/drain region is formed above an upper surface of the first source/drain region.
3. The integrated circuit of claim 2 , further comprising:
a second insulating structure disposed between the second source/drain region; and
a second portion of the semiconductor substrate, the second portion being arranged below the second source/drain region and being electrically coupled to the active area.
4. A method of manufacturing an integrated circuit, the method comprising:
forming a first groove in a semiconductor substrate above a first portion of the semiconductor substrate;
forming a first insulating structure at a bottom portion of the first groove;
forming a first source/drain region of an access transistor above the first insulating structure;
forming a channel region of the access transistor such that it is electrically coupled to the first portion of the semiconductor substrate;
forming a connecting structure, configured to electrically couple the first source/drain region of the access transistor to a storage element; and
wherein forming the first groove comprises forming a first masking structure on an upper surface of the semiconductor substrate, the first masking structure comprising a gate electrode of the access transistor.
5. A method of manufacturing an integrated circuit, the method comprising:
forming a first groove in a semiconductor substrate above a first portion of the semiconductor substrate;
forming a first insulating structure at a bottom portion of the first groove;
forming a first source/drain region of an access transistor above the first insulating structure;
forming a channel region of the access transistor such that it is electrically coupled to the first portion of the semiconductor substrate;
forming a connecting structure, configured to electrically couple the first source/drain region of the access transistor to a storage element; and
wherein forming the first source/drain region comprises forming a semiconductor material within the first groove after forming the insulating structure.
6. The method of claim 5 , comprising forming the semiconductor material within the first groove as a single-crystalline material by epitaxial growth.
7. A method of manufacturing an integrated circuit, the method comprising:
forming a first groove in a semiconductor substrate above a first portion of the semiconductor substrate;
forming a first insulating structure at a bottom portion of the first groove;
forming a first source/drain region of an access transistor above the first insulating structure;
forming a channel region of the access transistor such that it is electrically coupled to the first portion of the semiconductor substrate;
forming a connecting structure, configured to electrically couple the first source/drain region of the access transistor to a storage element;
forming a second groove in the semiconductor substrate above a second portion of the semiconductor substrate;
forming a second insulating structure at a bottom portion of the second groove; and
forming a second source/drain region of the access transistor above the second insulating structure.
8. The method of claim 7 , comprising forming the first and the second groove using a first masking structure formed on an upper surface of the semiconductor substrate as a mask.
9. The method of claim 7 , wherein forming the first source/drain region and forming the second source/drain region comprise forming a semiconductor material within the first and the second groove after forming the first and the second insulating structure.
10. The method of claim 9 , comprising forming the semiconductor material within the first and the second groove as a single-crystalline material by epitaxial growth.