Semiconductor device and method of forming through vias with reflowed conductive material
A semiconductor device is made by providing a first semiconductor wafer having semiconductor die. A gap is made between the semiconductor die. An insulating material is deposited in the gap. A portion of the insulating material is removed to form a first through hole via (THV). A conductive lining is conformally deposited in the first THV. A solder material is disposed above the conductive lining of the first THV. A second semiconductor wafer having semiconductor die is disposed over the first wafer. A second THV is formed in a gap between the die of the second wafer. A conductive lining is conformally deposited in the second THV. A solder material is disposed above the second THV. The second THV is aligned to the first THV. The solder material is reflowed to form the conductive vias within the gap. The gap is singulated to separate the semiconductor die.
1. A method of making a semiconductor device, comprising:
providing a first semiconductor wafer having a plurality of semiconductor die, each semiconductor die having a contact pad;
creating a gap between the semiconductor die, the gap having sufficient width to form a conductive via within the gap;
depositing an insulating material in the gap;
forming a conductive layer over the semiconductor die, the conductive layer being electrically connected to the contact pad of the semiconductor die;
removing a portion of the insulating material to form a through hole via (THV);
conforming a conductive lining in the THV;
disposing a solder material above the conductive lining of the THV;
reflowing the solder material to form the conductive via within the gap, the conductive via being electrically connected to the conductive layer; and
singulating the first semiconductor wafer through the gap to separate the semiconductor die.
2. The method of claim 1 , further including:
stacking a second semiconductor wafer having a plurality of semiconductor die over the first semiconductor wafer, the second semiconductor wafer having a gap between the semiconductor die;
forming a conductive via in the gap of the second semiconductor wafer; and
aligning the conductive via in the first semiconductor wafer to the conductive via in the second semiconductor wafer.
3. The method of claim 1 , further including:
stacking a plurality of semiconductor die; and
electrically interconnecting the plurality of semiconductor die through the conductive vias.
4. The method of claim 3 , wherein the plurality of semiconductor die are stacked in a pyramid arrangement.
5. The method of claim 3 , wherein the plurality of semiconductor die are stacked in a face-to-face, back-to-back, or face-to-back arrangement.
6. The method of claim 3 , wherein the plurality of semiconductor die are substantially the same size.
7. The method of claim 1 , further including forming a through silicon via under the contact pad of the semiconductor die.
8. The method of claim 1 , further including depositing the insulating material on a backside of the semiconductor die opposite the contact pad.