Tapered dielectric and conductor structures and applications thereof
View Patent ↗Disclosed are tapered dielectric and conductor structures which provide controlled impedance interconnection while signal conductor lines transition from finer pitches to coarser pitches thereby obviating electrical discontinuities generally associated with changes of circuit contact pitch. Also disclosed are methods for the construction of the devices and applications therefore.
1. An electronic interconnection structure to provide a controlled characteristic impedance for signal conductors that converge from a coarser pitch to a finer pitch comprising:
a dielectric layer having first and second surfaces;
first and second signal paths on the first surface of the dielectric layer the first and second signal paths extending through a tapering region to a convergence area, a width of each of the first and second signal paths being tapered to a progressively narrower width through the tapering region toward the convergence area and being adjacent a width of the dielectric layer, a thickness of the dielectric layer progressively tapering through the tapering region toward the convergence area.
2. The electronic interconnection structure of claim 1 , wherein the dielectric layer comprises a portion between the first and second signal paths.
3. The electronic interconnection structure of claim 2 wherein the width of the dielectric layer tapers to a progressively narrower width through the tapering region toward the convergence area.
4. The electronic interconnection structure of claim 1 wherein at least a portion of the convergence area is an aperture.
5. The electronic interconnection structure of claim 1 wherein the first signal paths are integral to an integrated circuit package.
6. The electronic interconnection structure of claim 1 wherein a rate at which the thickness of the dielectric layer tapers through the tapering region is proportional to a rate at which the width of each of the first and second signal paths narrows through the tapering region toward the convergence area.
7. The electronic interconnection structure of claim 1 further comprising a ground metal layer on the second surface of the dielectric layer.
8. The electronic interconnection structure of claim 7 wherein the ground metal layer becomes progressively diffuse through the tapering region toward the convergence area.
9. The electronic interconnection structure of claim 8 wherein a rate at which the ground metal layer becomes progressively diffuse through the tapering region is proportional to a rate at which the width of the signal paths narrow.
10. The electronic interconnection structure of claim 1 , wherein the thickness of the dielectric layer is perpendicular to the width of the dielectric layer.
11. The electronic interconnection structure of claim 10 , wherein the thickness of the dielectric layer is perpendicular to the first and second surfaces of the dielectric layer.