Semiconductor mounting bonding wire
View Patent ↗There is provided a bonding wire which does not cause a leaning failure or the like. A semiconductor mounting bonding wire has a breaking elongation of 7 to 20%, and stress at 1% elongation is greater than or equal to 90% of a tensile strength and is less than or equal to 100% thereof.
1. A semiconductor mounting bonding wire having a breaking elongation of 7 to 20%, containing Ag of 10 to 90 mass %, wherein a balance comprises Au,
wherein said semiconductor mounting bonding wire is obtained by drawing an ingot of the wire at a reduction of area of 6 to 18%, and
wherein stress at 1% elongation is within a range from 90% of a tensile strength to 100% thereof.
2. The semiconductor mounting bonding wire according to claim 1 , containing Ag of 15 to 45 mass %, and wherein a balance comprises Au.
3. The semiconductor mounting bonding wire according to claim 1 , wherein a total amount of an additional one or greater than one elements selected from Al, Co, Fe, Ge, Mn, Ca, Be, In, Hf, Pd, La and Pt is/are present in a quantity of 2 to 100000 mass ppm.
4. A semiconductor device comprising a semiconductor mounting bonding wire according to claim 1 , wherein the semiconductor mounting bonding wire is connected to a wiring electrode formed of Al or an Al alloy.
5. A semiconductor device comprising a semiconductor mounting bonding wire according to claim 1 , wherein the semiconductor mounting bonding wire connects a wiring electrode on a semiconductor substrate with a Ag plating surface or a Pd plating surface on a lead.
6. The semiconductor mounting bonding wire according to claim 2 , wherein a total amount of an additional one or greater than one elements selected from Al, Co, Fe, Ge, Mn, Ca, Be, In, Hf, Pd, La, and Pt is/are present in a quantity of 2 to 100000 mass ppm.
7. A semiconductor device comprising a semiconductor mounting bonding wire according to claim 2 , wherein the semiconductor mounting bonding wire is connected to a wiring electrode formed of Al or an Al alloy.
8. A semiconductor device comprising a semiconductor mounting bonding wire according to claim 3 , wherein the semiconductor mounting bonding wire is connected to a wiring electrode formed of Al or an Al alloy.
9. A semiconductor device comprising a semiconductor mounting bonding wire according to claim 6 , wherein the semiconductor mounting bonding wire is connected to a wiring electrode formed of Al or an Al alloy.
10. A semiconductor device comprising a semiconductor mounting bonding wire according to claim 2 , wherein the semiconductor mounting bonding wire connects a wiring electrode on a semiconductor substrate with a Ag plating surface of a Pd plating surface on a lead.
11. A semiconductor device comprising a semiconductor mounting bonding wire according to claim 3 , wherein the semiconductor mounting bonding wire connects a wiring electrode on a semiconductor substrate with a Ag plating surface or a Pd plating surface on a lead.
12. A semiconductor device comprising a semiconductor mounting bonding wire according to claim 6 , wherein the semiconductor mounting bonding wire connects a wiring electrode on a semiconductor substrate with a Ag plating surface or a Pd plating surface on a lead.
13. The semiconductor mounting bonding wire according to claim 1 , wherein a slope S between arbitrary two points in an area from 1% elongation to the breaking elongation in a tensile curve is within a range 0 (horizontal)≦S≦(0.1×σ M )/(EL-1), said σ M being the tensile strength of the bonding wire, said EL being the breaking elongation of the bonding wire.
14. The semiconductor mounting bonding wire according to claim 1 , wherein the bonding wire has stress at 1% elongation within a range from 90% to 100% of a tensile strength, and 0.2% proof stress in a tensile curve greater than or equal to 80% and less than or equal to 100% of the tensile strength.
15. The semiconductor mounting bonding wire according to claim 13 , containing Ag of 55 to 75 mass %.
16. The semiconductor mounting bonding wire according to claim 14 , containing Ag of 55 to 75 mass %.
17. The semiconductor mounting bonding wire according to claim 1 , wherein in a case of wire drawing for a wire diameter of greater than or equal to 100 μm, wire drawing is carried out at the reduction of area of a die being set to 10 to 18%, while in a case of wire drawing for a wire diameter of less than 100 μm, the reduction of area is set to about 6 to 14%.