Method of forming a CMOS structure having gate insulation films of different thicknesses
View Patent ↗The semiconductor integrated circuit device employs on the same silicon substrate a plurality of kinds of MOS transistors with different magnitudes of tunnel current flowing either between the source and gate or between the drain and gate thereof. These MOS transistors include tunnel-current increased MOS transistors at least one of which is for use in constituting a main circuit of the device. The plurality of kinds of MOS transistors also include tunnel-current reduced or depleted MOS transistors at least one of which is for use with a control circuit. This control circuit is inserted between the main circuit and at least one of the two power supply units.
1. A semiconductor integrated circuit device comprising:
a logic circuit including a first MOS transistor, which is a first conductivity type, supplied with an operating voltage through first and second power lines;
a second MOS transistor, which is the first conductivity type, having a source/drain path between the first and second power lines, a thickness of a gate insulation film of the second MOS transistor being larger than a thickness of a gate insulation film of the first MOS transistor;
a hold circuit coupled between the first and second power lines and holding an output information from the logic circuit; and
a third MOS transistor coupled between an output of the logic circuit and the hold circuit, a thickness of a gate insulation film of the third MOS transistor being larger than the thickness of the gate insulation film of the first MOS transistor,
wherein a source of the first MOS transistor is coupled to the second power line through the source/drain path of the second MOS transistor,
wherein the third MOS transistor is in an OFF state when the second MOS transistor is in an OFF state, and
wherein the hold circuit is supplied with the operating voltage even though the second and third MOS transistors are in the OFF state.
2. A semiconductor integrated circuit device according to claim 1 , further comprising:
an input/output circuit receiving an input signal from outside of the semiconductor integrated circuit device,
wherein the input/output circuit includes a forth MOS transistor, a withstanding voltage of the forth MOS transistor being higher than a withstanding voltage of the first MOS transistor, and
wherein a thickness of a gate insulation film of the forth transistor is a same thickness as the gate insulation films of the second and third transistors.
3. A semiconductor integrated circuit device according to claim 1 ,
wherein a first voltage is supplied between the source of the first MOS transistor and the gate of the first MOS transistor,
wherein the second MOS transistor is driven by being supplied with a second voltage between the source of the second transistor and the gate of the second transistor when the second MOS transistor is in an ON state, and
wherein the second voltage is larger than the first voltage.
4. A semiconductor integrated circuit device according to claim 1 ,
wherein the logic circuit includes a plurality of the first MOS transistors,
wherein sources of the plurality of the first MOS transistors are coupled to a third power line, and
wherein the source/drain path of the second MOS transistor is coupled between the second power line and the third power line.
5. A semiconductor integrated circuit device according to claim 1 ,
wherein a gate length of the second MOS transistor is longer than a gate length of the first MOS transistor, and
wherein a gate length of the third MOS transistor is longer than a gate length of the first MOS transistor.
6. A semiconductor integrated circuit device according to claim 1 ,
wherein a gate width of the third MOS transistor is larger than a gate width of the first MOS transistor.
7. A semiconductor integrated circuit device according to claim 1 ,
wherein the second MOS transistor and the third MOS transistor are controlled by a same control signal.
8. A semiconductor integrated circuit device comprising:
a logic circuit including a first MOS transistor, which is a first conductivity type, supplied with an operating voltage through first and second power lines;
a second MOS transistor, which is the first conductivity type, having a source/drain path between the first and second power lines, a thickness of a gate insulation film of the second MOS transistor being larger than a thickness of a gate insulation film of the first MOS transistor;
a hold circuit coupled between the first and second power lines and holding an output information from the logic circuit; and
a third MOS transistor coupled between an output of the logic circuit and the hold circuit, a thickness of a gate insulation film of the third MOS transistor being larger than the thickness of the gate insulation film of the first MOS transistor,
wherein a source of the first MOS transistor is coupled to the second power line though the source/drain path of the second MOS transistor, and
wherein the third transistor is controlled so as to transfer a signal outputted from the logic circuit when the second MOS transistor is in an ON state and to cut off a path between the logic circuit and the hold circuit when the second MOS transistor is in an OFF state.
9. A semiconductor integrated circuit device according to claim 8 , further comprising:
an input/output circuit receiving an input signal from outside of the semiconductor integrated circuit device,
wherein the input/output circuit includes a forth MOS transistor, a withstanding voltage of the forth MOS transistor being higher than a withstanding voltage of the first MOS transistor, and
wherein a thickness of a gate insulation film of the forth transistor is a same thickness as the gate insulation films of the second and third transistors.
10. A semiconductor integrated circuit device according to claim 8 ,
wherein a first voltage is supplied between the source of the first MOS transistor and the gate of the first MOS transistor,
wherein the second MOS transistor is driven by being supplied with a second voltage between the source of the second transistor and the gate of the second transistor when the second MOS transistor is in the ON state, and
wherein the second voltage is larger than the first voltage.
11. A semiconductor integrated circuit device according to claim 8 ,
wherein the logic circuit includes a plurality of the first MOS transistors,
wherein sources of the plurality of the first MOS transistors are coupled to a third power line,
wherein the source/drain path of the second MOS transistor is coupled between the second power line and the third power line.
12. A semiconductor integrated circuit device according to claim 8 ,
wherein a gate length of the second MOS transistor is longer than a gate length of the first MOS transistor, and
wherein a gate length of the third MOS transistor is longer than a gate length of the first MOS transistor.
13. A semiconductor integrated circuit device according to claim 8 ,
wherein a gate width of the third MOS transistor is larger than a gate width of the first MOS transistor.
14. A semiconductor integrated circuit device according to claim 8 ,
wherein the second MOS transistor and the third MOS transistor are controlled by a same control signal.