Fine resist pattern forming method and nanoimprint mold structure

1. A fine resist pattern forming method by transferring an ultrafine pattern having a line width of 10 nm or less with nonadiabatic near-field light exposure and other sized pattern with nanoimprint to a photoresist formed on a surface of a workpiece substrate, said method comprising:

providing a light-transmitting mold structure having a mold pattern corresponding to a portion to form a pattern by nanoimprint and a conductive film pattern corresponding to a portion to form a pattern by nonadiabatic near-field exposure, the mold pattern including convex patterns having a height which is equal to the sum of a thickness of the photoresist and a thickness of the conductive film pattern;

imprinting the mold pattern to the photoresist such that the mold pattern contacts the surface of the workpiece substrate, and simultaneously irradiating nonresonant light of a wavelength band other than the photosensitive band of said photoresist from a back surface of the light-transmitting mold structure; and

performing exposure by nonadiabatic near-field light generated at each edge portion of said conductive film pattern.

2. The fine resist pattern forming method according to claim 1 , wherein said mold structure comprises concave patterns and the convex patterns formed on a light-transmitting substrate and wherein said convex patterns corresponds to a portion to form a pattern by nanoimprint and said conductive film pattern corresponding to a portion to form a pattern by nonadiabatic near-field light exposure is formed in consecutive concave pattern portions.

3. The fine resist pattern forming method according to claim 1 , wherein said conductive film comprises a film having a light shielding effect.

4. The fine resist pattern forming method according to claim 1 , wherein said photoresist comprises an organic solvent which has a property of increasing viscosity of the resist by said irradiating said nonresonant light.

5. The fine resist pattern forming method according to claim 1 , wherein said workpiece substrate comprises a semiconductor wafer substrate on which a cured resin film is formed, and said photoresist is formed on the cured resin film.

6. A method comprising:

providing a mask including on one side a convex pattern and a conductive film pattern;

providing a substrate having a photoresist layer formed on a surface of the substrate, the convex pattern having a height which is equal to the sum of a thickness of the photoresist layer and thickness of the conductive film pattern;

pressing the convex pattern of the mask to the photoresist layer formed on the substrate such that the convex pattern contacts the surface of the substrate;

irradiating a light to the photoresist layer from another side of the mask to generate a nonadiabatic near-field light at an edge portion of the conductive film pattern, the nonadiabatic near-field light reaching the photoresist layer; and

removing the mask from the substrate to form a photoresist pattern on the substrate.

7. The method according to claim 6 , wherein the conductive film pattern is formed on a flat surface of the mask.

8. The method according to claim 6 , wherein the mask is provided by nanoimprint technique.

9. The method according to claim 6 , wherein the conductive film pattern is formed by an electron beam lithography method.

10. The method according to claim 6 , wherein the light has a wavelength band other than a photosensitive band of the photoresist layer.

11. A method comprising:

providing a mask including on one side a first mask pattern and a second mask pattern;

providing a semiconductor substrate having a photoresist layer formed on a surface of the substrate, the first mask pattern including a convex shape having a height which is equal to the sum of a thickness of the photoresist layer and a thickness of the second mask pattern;

pressing the first mask pattern of the mask to the photoresist layer such that the first mask pattern contacts the surface of the substrate;

irradiating a light to the photoresist layer from another side of the mask to generate a nonadiabatic near-field light at an edge portion of the second mask pattern, the nonadiabatic near-field light reaching the photoresist layer;

removing the mask from the semiconductor substrate; and

patterning a surface of the semiconductor substrate to form a photoresist pattern on the semiconductor substrate.

12. The method according to claim 11 , wherein the second mask pattern comprises a conductive film pattern formed on a flat surface of the mask.

13. The method according to claim 11 , wherein the mask is provided by nanoimprint technique.

14. The method according to claim 12 , wherein the conductive film pattern is formed by an electron beam lithography method.

15. The method according to claim 11 , wherein the light has a wavelength band other than a phosensitive band of the photoresist layer.

16. The fine resist pattern forming method according to claim 1 , wherein in the imprinting of the mold pattern to the photoresist, the mold pattern contacts the surface of a layer on the workpiece substrate which is beneath the photoresist.

17. The fine resist pattern forming method according to claim 1 , wherein at a point at which the mold pattern contacts the surface of the workpiece substrate, the conductive film pattern contacts the photoresist film.

18. The fine resist pattern forming method according to claim 1 , wherein the convex patterns of said mold pattern protrude from a surface of the mold pattern and said conductive film pattern is formed on said surface, and

wherein the workpiece substrate includes a stopper layer, and imprinting of the mold pattern includes pressing the mold pattern into the photoresist until an end of the convex portion stops at an interface between the photoresist and the stopper layer.

19. The fine resist pattern forming method according to claim 18 , wherein a height of the convex patterns and a thickness of the photoresist are set such that an end surface of the conductive film pattern contacts a surface of the photoresist.