IP Library Granted Patent US 7,928,753
Granted Patent B2
US 7,928,753 · App. 12/160,008 · Granted Apr 19, 2011

Device and method for evaluating electrostatic discharge protection capabilities

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Quick Facts
Patent No.
US 7,928,753
App. No.
12/160,008
Granted
Apr 19, 2011
Kind
B2
Abstract

A device and a method for evaluating ESD protection capabilities of an integrated circuit, the method includes: connecting multiple test probe to multiple integrated circuit testing points. The method is characterized by repeating the stages of: (i) charging a discharge capacitor to an ESD protection circuit triggering voltage level; (ii) connecting the discharge capacitor to the integrated circuit during a testing period such as to cause the discharge capacitor to interact with the integrated circuit; (iii) measuring at least one signal of the integrated circuit, during at least a portion of the testing period; and (iv) determining at least one ESD protection characteristic of the integrated circuit in response to the at least one signal.

Claims (30)

1. A method for evaluating ESD protection capabilities of an integrated circuit, the method comprises:

connecting multiple test probe to multiple integrated circuit testing points;

charging a discharge capacitor to an ESD protection circuit triggering voltage level;

coupling the discharge capacitor to the integrated circuit during a testing period such as to cause the discharge capacitor to interact with the integrated circuit;

measuring at least one signal of the integrated circuit, during at least a portion of the testing period; and

determining at least one ESD protection characteristic of the integrated circuit in response to the at least one signal.

2. The method according to claim 1 wherein the charging is preceded by defining the ESD protection circuit triggering voltage level.

3. The method according to claim 1 wherein the defining is responsive to a discharge period of the discharge capacitor and to a predefined high repetition rate.

4. The method according to claim 1 wherein the coupling comprises selecting a test path between the discharge capacitor and the integrated circuit out of multiple test paths defined between the discharge capacitor and the integrated circuit.

5. The method according to claim 1 wherein the coupling comprises coupling the discharge capacitor to the integrated circuit during a testing period that is longer than three oscillation cycles of an oscillatory circuit that comprises the discharge capacitor and at least a portion of the integrated circuit.

6. The method according to claim 1 wherein the charging comprises charging the discharge capacitor to a voltage level that is lower than 200 v.

7. The method according to claim 1 wherein the charging comprises charging the discharge capacitor to a voltage level that is lower than 100 v.

8. The method according to claim 1 wherein the charging comprises charging the discharge capacitor to a voltage level that is lower than 60 v.

9. The method according to claim 1 wherein the determining comprises comparing an estimated response of an integrated circuit that comprises a functional ESD protection circuit to the at least one signal.

10. The method according to claim 1 wherein the determining comprises finding a match between a response pattern corresponding to the at least one measured signal and one out of multiple response patterns that characterize different ESD protection mechanisms.

11. A device for evaluating ESD protection capabilities of an integrated circuit, the device comprises:

multiple test probes adapted to be connected to multiple integrated circuit testing point; a discharge capacitor;

a charging circuit adapted to charge the capacitor to an ESD protection circuit triggering voltage level;

a discharging circuit, adapted to selectively couple the discharge capacitor, during a testing period, to the integrated circuit such that the discharge capacitor interacts with the integrated circuit while being discharged;

a controller; for controlling said discharging circuit and said charging circuit; and

a processor, coupled to the multiple test probes, wherein the processor is adapted to process multiple signals received from the multiple test probes and to assist in determining at least one ESD protection characteristic of the integrated circuit.

12. The device according to claim 11 wherein the device is adapted to define the ESD protection circuit triggering voltage level.

13. The device according to claim 11 wherein the device defines the ESD protection circuit triggering voltage level in response to a discharge period of the discharge capacitor and to a predefined high repetition rate.

14. The device according to claim 11 wherein the discharging circuit comprises multiple test paths and wherein the device selects between the multiple test paths defined between the discharge capacitor and the integrated circuit.

15. The device according to claim 11 wherein the testing period that is longer than three oscillation cycles of an oscillatory circuit that comprises the discharge capacitor and at least a portion of the integrated circuit.

16. The device according to claim 11 wherein the charging circuit is adapted to charge the discharge capacitor to a voltage level that is lower than 200 v.

17. The device according to claim 11 wherein the charging circuit is adapted to charge the discharge capacitor to a voltage level that is lower than 100 v.

18. The device according to claim 11 wherein the charging circuit is adapted to charge the discharge capacitor to a voltage level that is lower than 60 v.

19. The device according to claim 11 wherein the processor is adapted to compare an estimated response of an integrated circuit that comprises a functional ESD protection circuit to the at least one signal.

20. The device according to claim 11 wherein the processor is adapted to find a match between a response pattern corresponding to the at least one measured signal and one out of multiple response patterns that characterize different ESD protection mechanisms.

Assignments (31)
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040925 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Feb 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V. F/K/A FREESCALE SEMICONDUCTOR, INC.
Reel/Frame 052917/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 040928 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE RELEASE OF SECURITY INTEREST. Recorded Jan 17, 2020
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 052915/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 11759915 AND REPLACE IT WITH APPLICATION 11759935 PREVIOUSLY RECORDED ON REEL 037486 FRAME 0517. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Dec 10, 2019
From: CITIBANK, N.A.
To: MORGAN STANLEY SENIOR FUNDING, INC.
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CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 042985 FRAME 0001. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051029/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 042762 FRAME 0145. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
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CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 038017 FRAME 0058. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051030/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12298143 PREVIOUSLY RECORDED ON REEL 039361 FRAME 0212. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded Oct 22, 2019
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 051029/0387 →
RELEASE OF SECURITY INTEREST Recorded Sep 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 050745/0001 →
RELEASE OF SECURITY INTEREST Recorded Sep 10, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
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CORRECTIVE ASSIGNMENT TO CORRECT THE TO CORRECT THE APPLICATION NO. FROM 13,883,290 TO 13,833,290 PREVIOUSLY RECORDED ON REEL 041703 FRAME 0536. ASSIGNOR(S) HEREBY CONFIRMS THE THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS.. Recorded Feb 20, 2019
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: SHENZHEN XINGUODU TECHNOLOGY CO., LTD.
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From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 042762/0145 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE APPLICATION 12681366 PREVIOUSLY RECORDED ON REEL 038017 FRAME 0058. ASSIGNOR(S) HEREBY CONFIRMS THE SECURITY AGREEMENT SUPPLEMENT. Recorded May 9, 2017
From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
Reel/Frame 042985/0001 →
CORRECTIVE ASSIGNMENT TO CORRECT THE REMOVE PATENTS 8108266 AND 8062324 AND REPLACE THEM WITH 6108266 AND 8060324 PREVIOUSLY RECORDED ON REEL 037518 FRAME 0292. ASSIGNOR(S) HEREBY CONFIRMS THE ASSIGNMENT AND ASSUMPTION OF SECURITY INTEREST IN PATENTS. Recorded Feb 1, 2017
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From: FREESCALE SEMICONDUCTOR INC.
To: NXP USA, INC.
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CHANGE OF NAME Recorded Nov 8, 2016
From: FREESCALE SEMICONDUCTOR INC.
To: NXP USA, INC.
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RELEASE OF SECURITY INTEREST Recorded Nov 7, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP B.V.
Reel/Frame 040928/0001 →
RELEASE OF SECURITY INTEREST Recorded Sep 21, 2016
From: MORGAN STANLEY SENIOR FUNDING, INC.
To: NXP, B.V., F/K/A FREESCALE SEMICONDUCTOR, INC.
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From: NXP B.V.
To: MORGAN STANLEY SENIOR FUNDING, INC.
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SUPPLEMENT TO THE SECURITY AGREEMENT Recorded Jun 16, 2016
From: FREESCALE SEMICONDUCTOR, INC.
To: MORGAN STANLEY SENIOR FUNDING, INC.
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SECURITY AGREEMENT SUPPLEMENT Recorded Mar 7, 2016
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