IP Library Granted Patent US 8,274,856
Granted Patent B2
US 8,274,856 · App. 12/165,057 · Granted Sep 25, 2012

Internal voltage generator and semiconductor memory device including the same

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Quick Facts
Patent No.
US 8,274,856
App. No.
12/165,057
Granted
Sep 25, 2012
Kind
B2
Abstract

A semiconductor device including an internal voltage generator circuit that provides an internal voltage having a different level depending on the operation speed is provided. The semiconductor device includes an internal voltage generator circuit configured to receive operation speed information to generate an internal voltage having a different level depending on the operation speed; and an internal circuit operated using the internal voltage.

Claims (9)

1. An internal voltage generator circuit, comprising:

a frequency detector configured to detect a frequency of an external clock by comparing the external clock with an internal reference clock to output operation speed information;

a differential amplifier configured to output a driver control signal in response to a feed-back voltage of an internal voltage and a reference voltage;

a driver configured to drive the internal voltage in response to the driver control signal; and

a voltage divider configured to divide the internal voltage to generate the feed-back voltage of the internal voltage, wherein a division ratio of the internal voltage depends on the operation speed information.

2. The internal voltage generator circuit of claim 1 , the voltage divider includes a plurality of voltage divider units configured to divide the internal voltage to generate the fed-back internal voltage and at least one of the voltage divider units is configured to be electrically shorted or opened depending on the operation speed information.

3. The internal voltage generator circuit of claim 1 , wherein the differential amplifier includes an operational amplifier.

4. The internal voltage generator circuit of claim 1 , wherein the driver includes a transistor configured to receive the driver control signal through a gate thereof to drive the internal voltage.

5. The internal voltage generator circuit of claim 1 , wherein the internal voltage generator circuit is configured for use in a semiconductor memory device.

Assignments (4)
CORRECTIVE ASSIGNMENT TO CORRECT THE ASSIGNEE IS HYNIX SEMICONDUCTOR INC. NOT HYNIX-SEMICONDUCTOR INC. THERE IS NO HYPHEN IN THE NAME. PREVIOUSLY RECORDED ON REEL 67328 FRAME 814. ASSIGNOR(S) HEREBY CONFIRMS THE CHANGE OF NAME. Recorded May 14, 2024
From: HYNIX SEMICONDUCTOR INC.
To: SK HYNIX INC.
Reel/Frame 067412/0482 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 9, 2024
From: SK HYNIX INC.
To: MIMIRIP LLC
Reel/Frame 067369/0832 →
CHANGE OF NAME Recorded May 6, 2024
From: HYNIX-SEMICONDUCTOR INC.
To: SK HYNIX INC.
Reel/Frame 067328/0814 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 8, 2008
From: BYEON, SANG-JIN
To: HYNIX SEMICONDUCTOR, INC.
Reel/Frame 021204/0331 →