Multi-exposure lithography employing a single anti-reflective coating layer
View Patent ↗A first photoresist is applied over an optically dense layer and lithographically patterned to form an array of first photoresist portions having a pitch near twice a minimum feature size. The pattern in the first photoresist portions, or a first pattern, is transferred into the ARC layer and partly into the optically dense layer. A second photoresist is applied and patterned into another array having a pitch near twice the minimum feature size and interlaced with the first pattern. The pattern in the second photoresist, or a second pattern, is transferred through the ARC portions and partly into the optically dense layer. The ARC portions are patterned with a composite pattern including the first pattern and the second pattern. The composite pattern is transferred through the optically dense layer and into the underlayer to form a sublithographic pattern in the underlayer.
1. A method of forming a patterned structure comprising:
forming a stack on a substrate, said stack including, from bottom to top, an underlying layer, an optically dense layer comprising a hydrocarbon-based polymer, an anti-reflective coating (ARC) layer, and a first photoresist;
lithographically patterning said first photoresist with a first pattern and transferring said first pattern into said ARC layer and an upper portion of said optically dense layer, but not into a lower portion of said optically dense layer, by a first etch;
applying a second photoresist on said optically dense layer and said ARC layer;
lithographically patterning said second photoresist with a second pattern and transferring said second pattern into said ARC layer by a second etch; and
transferring a composite pattern of said first pattern and said second pattern through said optically dense layer and into said underlying layer, wherein said first pattern is a pattern of a periodic array having a lithographic pitch, wherein said second pattern is a pattern of another periodic array having said lithographic pitch, wherein said first pattern and said second pattern are congruent and are offset relative to each other by one half of said lithographic pitch.
2. The method of claim 1 , wherein said optically dense layer is formed directly on said underlying layer.
3. The method of claim 1 , wherein said composite pattern has a pitch that is one half of said lithographic pitch.
4. The method of claim 3 , wherein said pitch of said composite pattern is a sublithographic pitch.
5. The method of claim 1 , wherein said composite pattern is a pattern of lines and spaces.
6. The method of claim 1 , wherein said composite pattern is a pattern of via holes.
7. The method of claim 1 , wherein said first photoresist is removed prior to applying said second photoresist.
8. The method of claim 7 , further comprising applying an adhesion promoter layer directly on said ARC layer containing said first pattern, wherein said second photoresist is applied directly on said adhesion promoter layer.
9. The method of claim 1 , further comprising transferring said first pattern partially into said optically dense layer by said first etch, wherein said first photoresist is completely consumed by said first etch.
10. The method of claim 9 , further comprising transferring said second pattern partially into said optically dense layer by said second etch, wherein said second photoresist is completely consumed by said second etch.
11. The method of claim 1 , wherein said ARC layer contains said composite pattern after said second etch, and wherein sidewalls of said ARC layer are tapered.
12. The method of claim 1 , wherein said ARC layer comprises one of silicon and an refractory metal at an atomic concentration from about 1% to about 50%.
13. The method of claim 1 , wherein said optically dense layer has an optical density greater than log 10 , said optical density is a logarithm of a ratio of an intensity of an incident ray to an intensity of a transmitted ray.
14. The method of claim 1 , wherein said ARC layer comprises silicon at an atomic concentration from about 1% to about 50%.
15. The method of claim 1 , wherein said ARC layer comprises a refractory metal at an atomic concentration from about 1% to about 50%.
16. The method of claim 1 , wherein said ARC layer has a different composition than said optically dense layer.