Semiconductor device and method of manufacturing the same
View Patent ↗The invention provides a semiconductor device having high reliability and a method of manufacturing the same. The semiconductor device of the invention has pad electrodes formed on a semiconductor die near the side surface portion thereof and connected to a semiconductor integrated circuit or the like in the semiconductor die, a supporting body formed on the pad electrodes, an insulation film formed on the side and back surface portions of the semiconductor die, wiring layers connected to the back surfaces of the pad electrodes and extending from the side surface portion onto the back surface portion of the semiconductor die so as to contact the insulation film, and a second protection film formed on the side surface portion of the supporting body.
1. A semiconductor device comprising:
a semiconductor die comprising a circuit element formed on a front surface thereof;
a pad formed on the front surface of the die and connected to the circuit element;
a supporting body made of an inorganic material or a metal and attached to the front surface of the die so as to cover a front surface of the pad;
an insulation film formed on a side surface of the die and a back surface of the die;
a wiring disposed on the insulating film so as to be on the back surface of the die and the side surface of the die and to be connected to a back surface of the pad; and
a protection film covering a side surface of the supporting body,
wherein the protection film extends from the side surface of the supporting body so as to cover the pad and the back surface of the semiconductor die.
2. The semiconductor device of claim 1 , further comprising a conductive terminal disposed on and connected to the wiring through an opening formed in the protection film.
3. A semiconductor device comprising:
a semiconductor die comprising a circuit element formed on a front surface thereof;
a pad formed on the front surface of the die and connected to the circuit element;
a supporting body made of an inorganic material or a metal and attached to the front surface of the die so as to cover a front surface of the pad;
an electrode portion disposed on the back surface of the die and connected to a back surface of the pad; and
a protection film covering a side surface of the supporting body, the pad and the back surface of the semiconductor die.