Lithography for pitch reduction
View Patent ↗In one embodiment, a photoresist is lithographically patterned to form an array of patterned photoresist portions having a pitch near twice a minimum feature size. Fluorine-containing polymer spacers are formed on sidewalls of the patterned photoresist portions. The pattern of the fluorine-containing polymer spacers is transferred into an underlying layer to form a pattern having a sublithographic pitch. In another embodiment, a first pattern in a first photoresist is transferred into a first ARC layer underneath to form first ARC portions. A planarizing second optically dense layer, a second ARC layer, and a second photoresist are applied over the first ARC portions. A second pattern in the second photoresist is transferred into the second ARC layer to form second ARC portions. The combination of the first ARC portions and second ARC portions function as an etch mask to pattern an underlying layer with a composite pattern having a sublithographic pitch.
1. A method of forming a patterned structure comprising:
forming an optically dense layer including a hydrocarbon-based polymer on a substrate;
applying and lithographically patterning a first photoresist on said optically dense layer;
forming polymer spacers directly on sidewalls of said first photoresist and directly on a top surface of said optically dense layer after said lithographic patterning;
removing said first photoresist selective to said polymer spacers; and
transferring a pattern of said polymer spacers into said optically dense layer and an underlying layer on said substrate by at least one etch.
2. The method of claim 1 , wherein said optically dense layer is formed directly on said underlying layer, and wherein said first photoresist is applied directly on said optically dense layer.
3. The method of claim 1 , wherein said polymer spacers are fluorine-containing polymer spacers.
4. The method of claim 3 , further comprising:
conformally depositing a fluorine-containing polymer layer directly on said first photoresist; and
forming said fluorine-containing polymer spacers by an anisotropic etch of said fluorine-containing polymer layer.
5. The method of claim 4 , wherein an array of first photoresist portions having a lithographic pitch is formed by said lithographic patterning of said first photoresist.
6. The method of claim 5 , wherein a lateral thickness of said fluorine-containing polymer layer on sidewalls of said first photoresist is less than one half of said lithographic pitch.
7. The method of claim 5 , wherein said fluorine-containing polymer spacers have a sublithographic pitch which is equal to one half of said lithographic pitch.
8. The method of claim 4 , wherein said anisotropic etch is selective to said first photoresist.
9. The method of claim 4 , wherein said fluorine-containing polymer layer comprises fluorine at an atomic concentration from about 1% to about 50%, and wherein fluorine concentration in said first photoresist is less than 0.5%.
10. A method of forming a patterned structure comprising:
forming an optically dense layer and a first stack of a first anti-reflective coating (ARC) layer and a first photoresist on a substrate;
lithographically patterning said first photoresist with a first pattern and transferring said first pattern into said first ARC layer by an etch;
forming a second stack of a second optically dense layer, a second ARC layer, and a second photoresist on said first ARC layer;
lithographically patterning said second photoresist with a second pattern and transferring said second pattern into said second ARC layer and said second optically dense layer; and
transferring said first pattern and said second pattern into an underlying layer on said substrate employing said first ARC layer and said second ARC layer as an etch mask.
11. The method of claim 10 , wherein said optically dense layer is formed directly on said underlying layer, and wherein said first ARC layer is formed directly on said optically dense layer.
12. The method of claim 10 , wherein said first pattern is a pattern of a periodic array having a lithographic pitch.
13. The method of claim 12 , wherein said second pattern is a pattern of another periodic array having said lithographic pitch.
14. The method of claim 13 , wherein said underlying layer is patterned with a composite pattern of said first array and said second array, wherein said composite pattern has a pitch that is one half of said lithographic pitch.
15. The method of claim 14 , wherein said pitch of said composite pattern is a sublithographic pitch.
16. The method of claim 13 , wherein said first pattern and said second pattern are congruent and are offset relative to each other by one half of said lithographic pitch.
17. The method of claim 10 , further comprising removing said first photoresist prior to said formation of said second stack.
18. The method of claim 10 , wherein said second optically dense layer is self-planarizing and covers an entirety of said first ARC layer having said first pattern.
19. A structure comprising:
an optically dense layer including a hydrocarbon-based polymer and located on a substrate; and
an array of polymer spacers located directly on a top surface of said optically dense layer and having a sublithographic pitch, wherein twice said sublithographic pitch is a lithographic pitch.
20. The structure of claim 19 , further comprising an array of patterned photoresist portions having said lithographic pitch.
21. The structure of claim 19 , wherein a top surface of said optically dense layer is exposed between each pair of neighboring polymer spacers.
22. A structure comprising:
an optically dense layer located on a substrate;
a first array of first anti-reflective coating (ARC) portions having a lithographic pitch and abutting a top surface of said optically dense layer; and
a second array of stacks having said lithographic pitch and interlaced with said first array, wherein each of said stacks comprises a second ARC portion abutting said optically dense layer and an optically dense portion abutting a top surface of said second ARC portion.
23. The structure of claim 22 , wherein said first array and said second array are offset by one half of said lithographic pitch.
24. The structure of claim 23 , wherein each neighboring pair of said first ARC portions and said second ARC portions are laterally separated by a sublithographic pitch which is the same as said one half of said lithographic pitch.
25. The method of claim 1 , wherein said top surface of said optically dense layer is exposed between each adjacent pair of polymer spacers after said removing of said first photoresist selective to said polymer spacers.