Semiconductor device including a first land on the wiring substrate and a second land on the sealing portion

1. A semiconductor device comprising:

a wiring board including a first surface, a second surface opposite to the first surface, a plurality of connection pads formed on the first surface, and a plurality of first lands formed on the second surface, the first lands being electrically connected to the connection pads, respectively;

a semiconductor chip mounted on the first surface of the wiring board;

a plurality of first conductive members electrically connecting the connection pads of the wiring board to the semiconductor chip;

an insulating resin layer formed on the first surface of the wiring board to cover the semiconductor chip and the first conductive members;

a plurality of second conductive members formed on the connection pads of the wiring board, so as to penetrate through the insulating resin layer; and

a plurality of second lands formed on the insulating resin layer and electrically connected to the second conductive members, respectively;

wherein the plurality of first conductive members include a third conductive member and a fourth conductive member,

wherein the plurality of second conductive members include a fifth conductive member and a sixth conductive member, and

wherein the plurality of connection pads include a first connection pad, a second connection pad and a third connection pad, the first connection pad being connected to both of the third conductive member and the fifth conductive member, the second connection pad being connected to the fourth conductive member without connecting to the first connection pad, and the third connection pad being connected to the sixth conductive member without connecting to the second connection pad.

2. The semiconductor device according to claim 1 , further comprising:

a rewiring line formed on the insulating resin layer and electrically connected to the second land to the second conductive member.

3. The semiconductor device according to claim 1 , wherein the second connection pad is positioned near the semiconductor chip than the third connection pad.

4. The semiconductor device according to claim 1 , further comprising:

a silicon board stacked on the semiconductor chip to form the second conductive member.

5. The semiconductor device according to claim 4 , further comprising:

a seventh conductive member formed on the silicon board, so as to penetrate though the insulating resin layer.

6. The semiconductor device according to claim 1 , further comprising:

another semiconductor device is stacked through the second land.

7. A semiconductor device, comprising:

a wiring board having first connection pads formed on a first surface, second connection pads formed on the first surface, and first land portions formed on a second surface and electrically connected to selected ones of the first and second connection pads;

a semiconductor chip mounted on the first surface of the wiring board;

first conductive members electrically connecting the first connection pads of the wiring board with the semiconductor chip;

a sealing portion covering at least the first surface of the wiring board, the semiconductor chip and the first conductive members, the sealing portion including a top surface;

second conductive members extending from the second connection pads of the wiring board and terminating at the top surface of the sealing portion;

rewiring lines arranged on the top surface of the sealing portion to be connected to the second conductive members;

second land portions arranged on the top surface of the sealing portion such that the second land portions are substantially coplanar with the rewiring lines, the second land portions being connected to the rewiring lines so that the second land portions are electrically connected to the second conductive members through the rewiring lines;

a dummy board is provided on the semiconductor chip to form the second conductive members; and

third conductive members provided on the dummy board, each of the third conductive members extended from the dummy board to the top surface of the sealing portion.

8. The semiconductor device according to claim 7 , further comprises:

another semiconductor device is stacked through the second land portions.

9. The semiconductor device according to claim 8 , further comprises:

an interval between the second land portions is determined according to an external terminal arrangement and a package structure of the another semiconductor device.