Precursors for depositing silicon-containing films and methods for making and using same
View Patent ↗Aminosilane precursors for depositing silicon-containing films, and methods for depositing silicon-containing films from these aminosilane precursors, are described herein. In one embodiment, there is provided an aminosilane precursor for depositing silicon-containing film comprising the following formula (I): (R 1 R 2 N) n SiR 3 4-n (I) wherein substituents R 1 and R 2 are each independently chosen from an alkyl group comprising from 1 to 20 carbon atoms and an aryl group comprising from 6 to 30 carbon atoms, at least one of substituents R 1 and R 2 comprises at least one electron withdrawing substituent chosen from F, Cl, Br, I, CN, NO 2 , PO(OR) 2 , OR, SO, SO 2 , SO 2 R and wherein R in the at least one electron withdrawing substituent is chosen from an alkyl group or an aryl group, R 3 is chosen from H, an alkyl group, or an aryl group, and n is a number ranging from 1 to 4.
1. An aminosilane precursor for depositing silicon-containing film comprising the following formula (I):
(R 1 R 2 N) n SiR 3 4-n (I)
wherein substituents R 1 and R 2 are each independently chosen from an alkyl group comprising from 1 to 20 carbon atoms and an aryl group comprising from 6 to 30 carbon atoms, wherein R 1 and R 2 in formula (I) are selected from the group consisting of R 1 and R 2 linked to form a ring structure or R 1 and R 2 not linked to form a ring structure, wherein at least one of substituents R 1 and R 2 comprises at least one electron withdrawing substituent chosen from F, CI, Br, I, CN, NO 2 , PO(OR) 2 , OR, RCOO, SO, SO 2 , SO 2 R and wherein R in the at least one electron withdrawing substituent is chosen from an alkyl group or an aryl group;
R 3 is chosen from H, an alkyl group comprising from 1 to 20 carbon atoms, or an aryl group comprising from 6 to 12 carbon atoms,
wherein any one or all of R 1 , R 2 , R, R 3 and the electron withdrawing substituent is substituted or unsubstituted,
and n is a number ranging from 1 to 4.
2. The aminosilane precursor of claim 1 wherein R 1 and R 2 are linked to form a ring structure and at least one of R 1 and R 2 is substituted.
3. The aminosilane precursor of claim 1 comprising bis(3,3-difluoropiperidino)silane.
4. A process for depositing a silicon-containing film on a substrate via chemical vapor deposition, the process comprising:
providing the substrate in a process chamber;
introducing an aminosilane precursor into the process chamber at a temperature and a pressure sufficient to react and deposit the silicon-containing film on the substrate wherein the aminosilane precursor comprises a compound having the following formula (I):
(R 1 R 2 N) n SiR 3 4-n (I)
wherein substituents R 1 and R 2 are each independently chosen from an alkyl group comprising from 1 to 20 carbon atoms and an aryl group comprising from 6 to 30 carbon atoms,
wherein at least one of substituents R 1 and R 2 comprises at least one electron withdrawing substituent chosen from F, CI, Br, I, CN, NO 2 , PO(OR) 2 , OR, RCOO, SO, SO 2 , SO 2 R and wherein R in the at least one electron withdrawing substituent is chosen from an alkyl group or an aryl group, and R 3 is chosen from H, an alkyl group comprising from 1 to 20 carbon atoms, or an aryl group comprising from 6 to 12 carbon atoms, and n is a number ranging from 1 to 4.
5. The process of claim 4 wherein the introducing step further comprises a nitrogen source chosen from ammonia, nitrogen and hydrazine.
6. The process of claim 5 wherein the nitrogen source is ammonia or nitrogen and the nitrogen source is present in a nitrogen source: precursor range of from 0.1 to 4:1.
7. The process of claim 4 wherein the temperature ranges from about 400° C. to about 700° C.
8. The process of claim 4 wherein the pressure ranges from about 20 mTorr to about 20 Torr.
9. An aminosilane precursor for depositing silicon-containing film comprising the following formula (II):
A n SiR 4 4-n (II)
wherein when A is at least one group chosen from the following amino groups (a) through (d) and (f) through (h), R 4 is chosen from hydrogen, an alkyl group comprising from 1 to 20 carbon atoms, or an aryl group comprising from 6 to 12 carbon atoms, and n is a number ranging from 1 to 4, and
when A is (i), R 4 is chosen from hydrogen, an alkyl group comprising from 1 to 20 carbon atoms, or an aryl group comprising from 6 to 12 carbon atoms, and n is a number ranging from 3 to 4, and
when A is (j), R 4 is chosen from hydrogen, an alkyl group comprising from 1 to 20 carbon atoms, or an aryl group comprising from 6 to 12 carbon atoms, and n is a number ranging from 2 to 4.
10. The aminosilane precursor of claim 9 wherein A is the following amino group (a):
11. The aminosilane precursor of claim 9 wherein A is the following amino group (b):
12. The aminosilane precursor of claim 9 wherein A is the following amino group (c):
13. The aminosilane precursor of claim 9 wherein A is the following amino group (d):
14. The aminosilane precursor of claim 9 wherein A is the following amino group (f):
15. The aminosilane precursor of claim 9 wherein A is the following amino group (g):
16. The aminosilane precursor of claim 9 wherein A is the following amino group (h):
17. The aminosilane precursor of claim 9 wherein A is the following amino group (i):
18. The aminosilane precursor of claim 9 wherein A is the following amino group (j):
19. The aminosilane precursor of claim 1 wherein R 1 and R 2 are not linked to form a ring structure.
20. A aminosilane precursor comprising bis[bis(2-methoxyethyl)amino]silane.
21. A aminosilane precursor comprising bis(2-methoxyethyl)aminosilane.