IP Library Patent Application 12193603
Patent Application
App. No. 12/193,603

VOLTAGE SWITCHABLE DIELECTRIC MATERIAL INCORPORATING MODIFIED HIGH ASPECT RATIO PARTICLES

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Patent No.
US None
App. No.
12/193,603
Abstract

Embodiments described herein provide for a composition of voltage switchable dielectric (VSD) material that includes a concentration of modified high-aspect ratio (HAR) particles. In an embodiment, at least a portion of the concentration includes HAR particles are surface-modified to provide core-shell HAR particles. As an alternative or addition, a portion of the concentration includes HAR particles that are surface-modified to have activated surfaces.

Claims (45)

1 . A composition of voltage switchable dielectric material comprising:

a concentration of high-aspect ratio (HAR) particles, wherein at least a portion of the concentration includes HAR particles that are surface-modified to provide core-shell HAR particles.

2 . The composition of claim 1 , further comprising:

a matrix;

a concentration of conductive and/or semiconductive particles other than the core-shell HAR particles.

3 . The composition of claim 2 , wherein a combined concentration of the core-shell HAR particles and the conductive and/or semiconductive particles are loaded into the matrix to be at or past a percolation level.

4 . The composition of claim 1 , wherein individual core-shell HAR particles include a core HAR particle that is formed a nano-dimensioned carbon structures with high aspect ratio.

5 . The composition of claim 1 , wherein individual core-shell HAR particles include a core HAR particle that is formed from nano-dimensioned metal rods or metal wires.

6 . The composition of claim 1 , wherein individual core-shell HAR particles include a core HAR particle that is formed from nano-dimensioned conductive metal oxide rods or wires.

7 . The composition of claim 1 , wherein the shell material includes a nano-dimensioned oxide.

8 . The composition of claim 1 , wherein the shell material includes a metallic coating.

9 . The composition of claim 7 , wherein the shell material is selected from a group consisting of titanium dioxide, tin dioxide, antimony doped tin dioxide, zinc oxide, nickel oxide, or copper oxide.

10 . The composition of claim 8 , wherein the shell materials is selected from a group of metals that have a capability of being electrolessly plated.

11 . The composition of claim 10 , wherein the shell material corresponds to copper, nickel, or gold.

12 . A composition comprising:

a matrix;

one or more types of particles dispersed in the matrix, the one or more types of particles including conductor particles, semiconductive particles, and high aspect ratio (HAR) particles that are nano-scaled in at least one dimension;

wherein the matrix and the one or more types of particles combine to provide the composition with a switchable characteristic of (i) being non-conductive in absence of a voltage that is greater than a threshold; and (ii) being conductive in presence of the voltage that is at or greater than the threshold; and

wherein the HAR particles are individually surface-modified to include an activated exterior surface.

13 . The composition of claim 12 , wherein the HAR particles are surface-modified to include a shell material, so as to provide core-shell HAR particles.

14 . The composition of claim 12 , wherein the HAR particles include carbon nanotubes.

15 . The composition of claim 12 , wherein the shell material is an oxide.

16 . The composition of claim 15 , wherein the shell material is selected from a group consisting of titanium dioxide, tin dioxide, antimony doped tin dioxide, zinc oxide, nickel oxide, copper oxide

17 . The composition of claim 12 , wherein individual core-shell HAR particles include a core HAR particle that is formed from nano-dimensioned metal rods or metal wires.

18 . The composition of claim 12 , wherein individual core-shell HAR particles include a core HAR particle that is formed from nano-dimensioned conductive metal oxide rods or metal oxide wires.

19 . The composition of claim 12 , wherein the one or more types of particles are dispersed in the matrix in a concentration that is at or just above a percolation level of the composition.

20 . The composition of claim 12 , wherein the shell material is a semi-conductor.

21 . The composition of claim 12 , wherein the shell material is an oxide.

22 . The composition of claim 12 , wherein the shell material is a conductor.

23 . The composition of claim 12 , wherein the shell material is a metal.

24 . The composition of claim 23 , wherein the shell material is a metal that is formed as a shell on the HAR particle through an electroless plating process.

25 . The composition of claim 23 , wherein the shell material corresponds to one of copper, nickel, or gold.

26 . The composition of claim 18 , wherein the shell material corresponds to an oxide that is formed on the HAR particles by subjecting the HAR particles to an oxide precursor solution.

27 . The composition of claim 16 , wherein the shell material is selected from a group consisting of titanium dioxide, tin dioxide, antimony doped tin dioxide, zinc oxide, nickel oxide, copper oxide, or combinations thereof.

28 . A method for forming VSD material, the method comprising:

subjecting a concentration of HAR particles to a medium that activates a surface of individual HAR particle that comprise at least a portion of the concentration;

forming VSD material using the concentration of HAR particles.

29 . The method of claim 28 , wherein the HAR particles include carbon nanotubes, and wherein subjecting the concentration to the medium includes subjecting a quantity of carbon nanotubes to an acidic solution.

30 . The method of claim 28 , wherein subjecting a concentration of HAR particles to a medium includes subjecting the concentration to a precursor that both activates the surface of the individual particles and forms a shell material on individually activated HAR particles in the concentration.

31 . A method for forming VSD material, the method comprising:

subjecting a concentration of HAR particles to a medium that activates a surface of individual HAR particle that comprise at least a portion of the concentration;

forming a shell material on individually activated HAR particles in the concentration; and

forming VSD material using the concentration of HAR particles.

32 . The method of claim 31 , wherein forming a shell material on individually activated HAR particles includes using a liquid medium.

33 . The method of claim 31 , wherein forming a shell material on individually activated HAR particles includes using a colloidal medium.

Assignments (5)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 23, 2014
From: SHOCKING TECHNOLOGIES, INC.
To: LITTELFUSE, INC.
Reel/Frame 032123/0747 →
RELEASE OF SECURITY INTEREST Recorded Nov 20, 2012
From: SILICON VALLEY BANK
To: SHOCKING TECHNOLOGIES, INC.
Reel/Frame 029333/0469 →
SECURITY AGREEMENT Recorded Nov 20, 2012
From: SHOCKING TECHNOLOGIES, INC.
To: LITTELFUSE, INC.
Reel/Frame 029340/0806 →
SECURITY AGREEMENT Recorded Jul 23, 2010
From: SHOCKING TECHNOLOGIES, INC.
To: SILICON VALLEY BANK
Reel/Frame 024733/0299 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 21, 2008
From: KOSOWSKY, LEX; FLEMING, ROBERT; WU, JUNJUN
To: SHOCKING TECHNOLOGIES, INC.
Reel/Frame 021422/0873 →