Electronic device including a gated diode
View Patent ↗An electronic device can include a gated diode, wherein the gated diode includes a junction diode structure including a junction. A first conductive member spaced apart from and adjacent to the junction can be connected to a first signal line. A second conductive member, spaced apart from and adjacent to the junction, can be both electrically connected to a second signal line and electrically insulated from the first conductive member. The junction diode structure can include a p-n or a p-i-n junction. A process for forming the electronic device is also described.
1. An electronic device comprising a gated diode, wherein the gated diode comprises:
a junction within a semiconductor material;
a first conductive member spaced apart from and adjacent to the junction, wherein the first conductive member includes a first gate electrode of the gated diode; and
a second conductive member spaced apart from and adjacent to the junction, wherein the second conductive member includes a second gate electrode of the gated diode,
wherein the gated diode comprises the junction, the first gate electrode, and the second gate electrode.
2. The electronic device of claim 1 , wherein the junction comprises a graded junction.
3. The electronic device of claim 1 , wherein the junction comprises a pn junction.
4. The electronic device of claim 1 , wherein the gated diode comprises a single pn junction.
5. The electronic device of claim 1 , wherein the junction is part of a p-i-n diode.
6. The electronic device of claim 1 , wherein the p-i-n diode comprises a single p-type region, a single intrinsic region, and a single n-type region.
7. The electronic device of claim 1 , wherein the semiconductor material comprises silicon and germanium.
8. The electronic device of claim 1 , wherein the semiconductor material comprises silicon and carbon.
9. The electronic device of claim 1 , wherein the first conductive member, the second conductive member, or both comprises a semiconductor material.
10. The electronic device of claim 1 , wherein the first conductive member, the second conductive member, or both comprises a metal-containing material.
11. The electronic device of claim 1 , further comprising a first signal line and a second signal line, wherein:
the first signal line is electrically connected to the first conductive member; and
the second signal line is electrically connected to the second conductive member.
12. The electronic device of claim 11 , wherein the second signal line is configured to be controlled independent of the first signal line.
13. The electronic device of claim 1 , wherein the junction is part of a planar diode.
14. The electronic device of claim 1 , wherein the junction is part of a fin diode.
15. The electronic device of claim 1 , further comprising a first gate dielectric layer lying between the first conductive member and the junction.
16. The electronic device of claim 1 , further comprising a first gate dielectric layer lying between the second conductive member and the junction.
17. The electronic device of claim 1 , further comprising:
a first gate dielectric layer lying between the first conductive member and the junction; and
a second gate dielectric layer lying between the second conductive member and the junction.
18. The electronic device of claim 1 , wherein the first gate electrode and the second gate electrode lie adjacent to opposite sides of the junction.
19. The electronic device of claim 18 , wherein the first gate electrode and the second gate electrode lies along opposing lateral sides of the junction.
20. The electronic device of claim 1 , wherein:
the first gate electrode underlies the junction; and
the second gate electrode overlies the junction.