Compositions and methods for rapidly removing overfilled substrates
View Patent ↗This invention relates to compositions and methods for removing overfilled substrates, preferably at a relatively high removal rates. Advantageously, a composition according to the invention can contain an oxidizer, preferably a per-type oxidizer such as a peroxide, periodic acid, and peracetic acid, and may also optionally contain an abrasive.
1. A method of chemical mechanical polishing of a substrate comprising the steps of:
A) providing a substrate having a surface comprising copper disposed over a predominately dielectric layer;
B) movably contacting the substrate with a chemical-mechanical-polishing composition under conditions where at least a portion of the copper is removed, wherein the method has a copper removal rate of at least about of at least about 2 microns per minute at a polishing pressure from about 0.1 to about 15 psi, and wherein the chemical-mechanical-polishing composition comprises:
a) an oxidizer selected from the group consisting of a peroxide, periodic acid, peracetic acid, and ammonium persulfate, wherein the oxidizer forms free radicals;
b) water,
c) an amine-containing film-forming agent, and
d) at least one non-chelating free radical quencher selected from an hydroxyl-containing amine, a polyol compound, an unsaturated cycloalkene having more than one carbon-carbon double bond, a diazene compound, an azobenzene compound, humic acid, and/or derivatives and salts thereof, with the proviso that the at least one non-chelating free radical quencher is not ascorbic acid, isopropanol, thiamine, or a glycol compound, and that the non-chelating free radical quencher is not the amine-containing film-forming agent, and wherein the amount of the non-chelating free radical quencher is sufficient to reduce the amount of corrosion of the polished copper surface.
2. The method of chemical mechanical polishing of claim 1 wherein the oxidizer is periodic acid.
3. The method of chemical mechanical polishing of claim 1 wherein the oxidizer is a peroxide.
4. The method of chemical mechanical polishing of claim 1 wherein the chemical-mechanical-polishing composition further comprises at least one of ascorbic acid, isopropanol, thiamine, or a glycol compound.
5. The method of chemical mechanical polishing of claim 1 wherein the chemical-mechanical-polishing composition further comprises ascorbic acid.
6. The method of chemical mechanical polishing of claim 1 wherein the free radical quencher comprises a hydroxyl-containing amine.
7. The method of chemical mechanical polishing of claim 1 wherein the free radical quencher comprises a polyol compound.
8. The method of chemical mechanical polishing of claim 1 wherein the free radical quencher comprises an unsaturated cycloalkene having more than one carbon-carbon double bond.
9. The method of chemical mechanical polishing of claim 1 wherein the free radical quencher comprises a diazene compound.
10. The method of chemical mechanical polishing of claim 1 wherein the free radical quencher comprises an azobenzene compound.
11. The method of chemical mechanical polishing of claim 1 wherein the free radical quencher comprises humic acid and/or derivatives and salts thereof.
12. The method of claim 1 , further comprising changing the composition of the chemical-mechanical-polishing composition during the step of movably contacting the substrate.
13. The method of claim 12 , wherein the step of changing the composition comprises transitioning between two separate polishing compositions, a first polishing composition and a second polishing composition, each having different compositions.
14. The method of claim 13 , wherein the first and second polishing compositions are different in one or more of the following ways: the first polishing composition has a greater abrasive particle size than the second polishing composition; the first polishing composition has a greater amount of abrasive particles than the second polishing composition; the first polishing composition has a greater amount of oxidizer than the second polishing composition; the first polishing composition has a lower pH than the second polishing composition; and the second polishing composition has a greater amount of non-chelating free radical quenchers and/or film-forming agents than the first polishing composition.
15. The method of chemical mechanical polishing of claim 1 wherein the method has a copper removal rate of at least about 10 microns/minute.
16. The method of chemical mechanical polishing of claim 1 wherein the method has a copper removal rate of at least 4 microns/minute at a polishing pressure between about 0.3 psi to about 6 psi.
17. The method of chemical mechanical polishing of claim 1 wherein the method has a copper removal rate of at least about 3 microns/minute.
18. The method of chemical mechanical polishing of claim 1 wherein the amine-containing film-forming agent comprises benzotriazole, triazole, benzimidazole, or mixtures thereof.
19. The method of chemical mechanical polishing of claim 1 wherein the chemical-mechanical-polishing composition comprises a multi-hydroxybenzene compound.
20. A method for chemically mechanically polishing an overfilled substrate having at least copper disposed over a relatively non-conductive layer, which method comprises the steps of:
providing a polishing or etching composition capable of polishing, etching, and/or removing the metal-containing layer material at a removal rate of about 2 microns/minute to about 45 microns/minute wherein the composition comprises: i) from about 0.1% to about 30% by weight of an oxidizer selected from the group consisting of a peroxide, periodic acid, peracetic acid, ammonium persulfate, or a combination thereof; ii) a majority of a diluent; iii) at least one non-chelating free radical quencher selected from an hydroxyl-containing amine, a polyol compound, an unsaturated cycloalkene having more than one carbon-carbon double bond, a diazene compound, an azobenzene compound, humic acid, and/or derivatives and salts thereof, with the proviso that the at least one non-chelating free radical quencher is not ascorbic acid, isopropanol, thiamine, or a glycol compound, and that the non-chelating free radical quencher is not the amine-containing film-forming agent, and iv) from about 0.1% to about 30% by weight of an abrasive; and
movably contacting the polishing or etching composition with the substrate under conditions where at least a portion of the first metal-containing layer is removed to form first regions of material having substantially the same composition as said copper layer on a surface of the substrate, and to form second regions of material having substantially the same composition as said relatively non-conductive layer on a surface of the substrate.