Patent Assignment
Reel/Frame 028487/0205
Assignment of Assignor's Interest
Recorded: 2012-07-03
Pages: 6
Assignor
DUPONT AIR PRODUCTS NANOMATERIALS LLC
Executed: 2012-06-05
Assignee
AIR PRODUCTS AND CHEMICALS, INC.
7201 HAMILTON BOULEVARD, ALLENTOWN, PENNSYLVANIA, 18195-1501
Covered Properties
(47)
Compositions of chemical mechanical planarization slurries contacting noble-metal-featured substrates
Gel-Free Colloidal Abrasive Polishing Compositions and Associated Methods
Composition and Associated Methods for Chemical Mechanical Planarization Having High Selectivity for Metal Removal
Catalyst Attached to Solid and Used to Promote Free Radical Formation in Cmp Formulations
Chemical Mechanical Polishing Composition and Process
Chemical Mechanical Polishing Composition and Process
Periodic Acid Compositions for Polishing Ruthenium/Low K Substrates
Catalytic Composition for Chemical-Mechanical Polishing, Method of Using Same, and Substrate Treated with Same
Composition for Chemical-Mechanical Polishing and Method of Using Same
Compositions for Chemical Mechanical Planarization of Tantalum and Tantalum Nitride
Tunable Composition and Method for Chemical-Mechanical Planarization with Aspartic Acid/Tolyltriazole
Chemical-Mechanical Planarization Composition with Nitrogen Containing Polymer and Method for Use
Chemical Mechanical Polishing Composition and Process
Cmp Method for Copper, Tungsten, Titanium, Polysilicon, and Other Substrates Using Organosulfonic Acids as Oxidizers
Particulate or Particle-Bound Chelating Agents
Surface Modified Colloidal Abrasives, Including Stable Bimetallic Surface Coated Silica Sols for Chemical Mechanical Planarization
Composition and Associated Methods for Chemical Mechanical Planarization Having High Selectivity for Metal Removal
Alumina Abrasive for Chemical Mechanical Polishing
Low Defectivity Product Slurry for Cmp and Associated Production Method
Patent:
6,979,252 →
Application:
11/030,503 →
Polishing Method to Reduce Dishing of Tungsten on a Dielectric
Chemical Mechanical Polishing Composition and Process
Chemical-Mechanical Planarization Composition Having Benzenesulfonic Acid and Per-Compound Oxidizing Agents, and Associated Method for Use
Free Radical-Forming Activator Attached to Solid and Used to Enhance Cmp Formulations
Dihydroxy Enol Compounds Used in Chemical Mechanical Polishing Compositions Having Metal Ion Oxidizers
Free Radical-Forming Activator Attached to Solid and Used to Enhance Cmp Formulations
Surface Modified Colloidal Abrasives, Including Stable Bimetallic Surface Coated Silica Sols for Chemical Mechanical Planarization
Method and slurry for tuning low-k versus copper removal rates during chemical mechanical polishing
Application:
11/643,519 →
Publication:
US 2008/0149884
Method for Immobilizing Ligands and Organometallic Compounds on Silica Surface, and Their Application in Chemical Mechanical Planarization
Fluoride-Modified Silica Sols for Chemical Mechanical Planarization
Reverse Shallow Trench Isolation Process
Application:
12/179,643 →
Publication:
US 2009/0047870
Method for Chemical Mechanical Planarization of Chalcogenide Materials
Method for Chemical Mechanical Planarization of Chalcogenide Materials
Compositions and Methods for Rapidly Removing Overfilled Substrates
Composition and method used for chemical mechanical planarization of metals
Application:
12/213,141 →
Publication:
US 2008/0254629
Polishing Slurry for Copper Films
Dihydroxy Enol Compounds Used in Chemical Mechanical Polishing Compositions Having Metal Ion Oxidizers
Combination, Method, and Composition for Chemical Mechanical Planarization of A Tungsten-Containing Substrate
Method and Composition for Chemical Mechanical Planarization of a Metal
Method and Composition for Chemical Mechanical Planarization of a Metal or a Metal Alloy
Method and Composition for Chemical Mechanical Planarization of a Metal-Containing Substrate
Method for Exposing Through-Base Wafer Vias for Fabrication of Stacked Devices
Application:
12/888,872 →
Publication:
US 2011/0237079
Method for Forming Through-Base Wafer Vias for Fabrication of Stacked Devices
Method for Chemical Mechanical Planarization of a Copper-Containing Substrate
Method for Chemical Mechanical Planarization of a Tungsten-Containing Substrate
Method and Slurry for Tuning Low-K Versus Copper Removal Rates During Chemical Mechanical Polishing
Application:
13/052,457 →
Publication:
US 2011/0165777
Chemical Mechanical Planarization Composition And Method With Low Corrosiveness
Cmp Slurry/Method for Polishing Ruthenium and Other Films
Related Assignments
(3)
Other recorded transfers of the patents in this record — the chain of ownership.
Patent Security Agreement
Oct 27, 2016
From: VERSUM MATERIALS US, LLC
To: CITIBANK, N.A., AS COLLATERAL AGENT
Reel/Frame 040503/0442 →
Assignment of Assignor's Interest
Feb 20, 2017
From: AIR PRODUCTS AND CHEMICALS, INC.
To: VERSUM MATERIALS US, LLC
Reel/Frame 041772/0733 →
Release of Security Interest
Oct 7, 2019
From: CITIBANK, N.A., AS AGENT
To: VERSUM MATERIALS US, LLC
Reel/Frame 050647/0001 →