Method and composition for chemical mechanical planarization of a metal
View Patent ↗A composition and associated method for chemical mechanical planarization of a metal-containing substrate (e.g., a copper substrate) are described herein which afford high and tunable rates of metal removal as well as low within a wafer non-uniformity values and low residue levels remaining after polishing.
1. A metal surface polishing composition comprising:
a) an abrasive ranging from 10 ppm to about 100 ppm;
b) an ionic liquid compound comprising an imidazolium salt having the general molecular structure:
where R 1 is selected from H, normal-alkyl, branched alkyl, alkoxy, and alkyl thioether groups; R 2 is selected from H, normal-alkyl, branched alkyl, alkoxy, and alkyl thioether groups; R 3 is selected from normal-alkyl, branched alkyl, alkoxy, alkyl thioether, cyclic and non-aromatic rings, heterocyclic non-aromatic rings and other suitable organic groups; and anion is selected from a univalent and a multivalent anion; and
c) an oxidizing agent
d) a substrate comprising a metal surface;
e) a polishing pad.
2. The composition of claim 1 wherein the anion is selected from the group consisting of sulfate, bisulfate, nitrate, trifluoroacetate, and fluorosulfonate.
3. The composition of claim 1 wherein the ionic liquid compound is 1,2,3-trimethylimidiazolium sulfate.
4. The composition of claim 1 wherein the oxidizing agent is selected from the group consisting of hydrogen peroxide, periodic acid, potassium iodate, potassium permanganate, ammonium persulfate, ammonium molybdate, ferric nitrate, nitric acid, potassium nitrate, ammonia, amine compounds, and mixtures thereof.
5. The composition of claim 4 wherein the oxidizing agent is hydrogen peroxide.
6. The composition of claim 1 wherein the abrasive is colloidal silica.
7. The composition of claim 1 wherein the polishing composition has a pH from about 4 to about 10.
8. The composition of claim 1 wherein the polishing composition has a pH from about 5 to about 8.