Chemical mechanical polishing composition and process
View Patent ↗A composition for chemical mechanical polishing includes a slurry. A sufficient amount of a selectively oxidizing and reducing compound is provided in the composition to produce a differential removal of a metal and a dielectric material. A pH adjusting compound adjusts the pH of the composition to provide a pH that makes the selectively oxidizing and reducing compound provide the differential removal of the metal and the dielectric material. A composition for chemical mechanical polishing is improved by including an effective amount for chemical mechanical polishing of a hydroxylamine compound, ammonium persulfate, a compound which is an indirect source of hydrogen peroxide, a peracetic acid or periodic acid. A method for chemical mechanical polishing comprises applying a slurry to a metal and dielectric material surface to produce mechanical removal of the metal and the dielectric material. A selectively oxidizing and reducing compound is applied to produce a differential removal of the metal and the dielectric material. The pH of the slurry and the selectively oxidizing and reducing compound is adjusted to provide the differential removal of the metal and the dielectric material. A method for chemical mechanical polishing comprises applying a slurry to a metal and dielectric material surface to produce mechanical removal of the metal and the dielectric material, and an effective amount for chemical mechanical polishing of a hydroxylamine compound, ammonium persulfate, a compound which is an indirect source of hydrogen peroxide, a peracetic acid or periodic acid.
1. A metal layer polishing slurry comprising:
an abrasive and a compound selected from the group consisting of hydroxylamine, hydroxylamine nitrate, hydroxylamine chloride, and hydroxylamine sulfate wherein said slurry has a pH which is neutral or basic.
2. A metal layer polishing slurry comprising:
an abrasive and a compound selected from the group consisting of hydroxylamine, hydroxylamine nitrate, hydroxylamine chloride, and hydroxylamine sulfate, wherein said slurry contains alumina as an abrasive.
3. The slurry of claim 2 , wherein the pH of said slurry has a pH between 2.6 and 6.8.
4. The slurry of claim 1 , wherein the pH of said slurry is basic.
5. The slurry of claim 2 , further comprising a chelating agent and surfactant.
6. The slurry of claim 1 , wherein said compound is hydroxylamine.
7. The slurry of claim 2 , wherein the pH of said slurry is acidic.
8. The slurry of claim 6 , wherein the pH of said slurry is basic.
9. A metal layer polishing slurry comprising:
an abrasive and a compound selected from the group consisting of hydroxylamine, hydroxylamine nitrate, hydroxylamine chloride, and hydroxylamine sulfate, said slurry further comprising an organic acid.
10. The slurry of claim 9 wherein the organic acid is selected from the group consisting of oxalic acid, peracetic acid, lactic acid, malonic acid, citric acid, lactic acid, periodic acid, gluconic acid, tartaric acid, and combinations thereof.
11. A composition comprising:
a chemical mechanical polishing slurry comprising an abrasive and hydroxylamine nitrate.
12. The slurry of claim 11 , wherein the pH of said slurry has a pH between 2.6 and 6.8.
13. The slurry of claim 11 , wherein the pH of said slurry is basic.
14. The slurry of claim 11 , wherein said slurry contains alumina as an abrasive.
15. The slurry of claim 14 , further comprising a chelating agent and surfactant.
16. The slurry of claim 11 , wherein the pH of said slurry is acidic.
17. The slurry of claim 11 , further comprising an organic acid.
18. The slurry of claim 17 , wherein the organic acid is selected from the group consisting of oxalic acid, peracetic acid, lactic acid, gluconic acid, malonic acid, citric acid, lactic acid, periodic acid, gluconic acid, tartaric acid, and combinations thereof.
19. The slurry of claim 11 , wherein the concentration of hydroxylamine nitrate is about 0.5% by weight.
20. The slurry of claim 1 , wherein the pH of said slurry is neutral.