Package device having crack arrest feature and method of forming
View Patent ↗A package device has a package substrate, a semiconductor die on the package substrate, and a molding compound on the package substrate and over the semiconductor die. The semiconductor die has a last passivation layer, an active circuit region in an internal portion of the die, an edge seal region along a periphery of the die, and a structure over the edge seal region extending above the last passivation layer, covered by the molding compound, and comprising a polymer material. The structure may extend at least five microns above the last passivation layer. The structure stops cracks in the molding compound from reaching the active circuit region. The cracks, if not stopped, can reach wire bonds in the active region and cause them to fail.
1. A packaged device, comprising:
a package substrate;
a semiconductor die on the package substrate, and
a molding compound on the package substrate and over the semiconductor die;
wherein the semiconductor die has:
a last passivation layer;
an active circuit region in an internal portion of the semiconductor die;
an edge seal region along a periphery of the semiconductor die; and
a structure over the edge seal region extending above the last passivation layer, covered by the molding compound, and comprising a polymer material.
2. The packaged device of claim 1 , wherein:
the polymer material has an interface with the molding compound; and
the interface comprises direct contact between the molding compound and the polymer material.
3. The packaged device of claim 1 , wherein the structure surrounds the active circuit region.
4. The packaged device of claim 1 , wherein the semiconductor die further comprises a dicing crack stop region under the structure.
5. The packaged device of claim 4 , wherein the semiconductor die further comprises a moisture barrier between the dicing crack stop region and the active circuit region.
6. The packaged device of claim 1 , wherein the semiconductor die further comprises an underlying passivation layer under the last passivation layer.
7. The packaged device of claim 1 , wherein the molding compound has a lower concentration of filler near a first corner of the semiconductor die than a second corner of the semiconductor die and wherein the structure is along the periphery at the first corner of the semiconductor die.
8. The packaged device of claim 1 , further comprising a plurality of wires electrically connecting the package substrate to the semiconductor die, wherein the plurality of wires has a density of at least 20 wires per millimeter at the semiconductor die.
9. The packaged device of claim 1 , wherein the structure comprises one of a group consisting of polyimide and benzocyclobutene and is a means for preventing cracks that occur in the molding compound from extending into the active circuit region.
10. The packaged device of claim 1 , wherein the structure extends at least five microns above the last passivation layer.
11. A packaged device, comprising:
a package substrate;
a semiconductor die on the package substrate; and
a molding compound on the package substrate and over the semiconductor die;
wherein the semiconductor die has:
a last passivation layer;
an active circuit region in an internal portion of the semiconductor die;
an edge seal region around a periphery of the semiconductor die; and
a structure over the edge seal region, covered by the molding compound, and extending above the last passivation layer by at least five microns.
12. The packaged device of claim 11 , wherein the structure surrounds the active circuit region.
13. The packaged device of claim 11 , wherein the semiconductor die further comprises a dicing crack stop region under the structure.
14. The packaged device of claim 13 , wherein the semiconductor die further comprises a moisture barrier between the dicing crack stop region and the active circuit region.
15. The packaged device of claim 11 , wherein the structure comprises a polymer material comprising one of a group consisting of polyimide and benzocyclobutene.
16. The packaged device of claim 15 , wherein:
the polymer material has an interface with the molding compound; and
the interface comprises direct contact between the molding compound and the polymer material.
17. The packaged device of claim 16 , wherein the molding compound comprises an epoxy resin and a filler, wherein the filler comprises particles of silicon dioxide.
18. The packaged device of claim 17 , wherein the molding compound has a lower concentration of silicon dioxide near a first corner of the semiconductor die than a second corner of the semiconductor die and wherein the structure is along the periphery at the first corner of the semiconductor die.
19. The packaged device of claim 11 , further comprising a plurality of wires electrically connecting the package substrate to the semiconductor die, wherein the plurality of wires has a density of at least 20 wires per millimeter at the semiconductor die.