Substrate processing apparatus and substrate processing method for performing etching process with phosphoric acid solution
View Patent ↗An additive containing a hexafluorosilicic acid solution (H 2 SiF 6 +H 2 O) is sequentially inputted into a phosphoric acid solution pooled in an immersion bath from an additive input mechanism. Further, a trap agent containing a fluoroboric acid solution (HBF 4 +H 2 O) is inputted into the phosphoric acid solution from a trap agent input mechanism. F − which accelerates etching of a silicon nitride film is added as appropriate by sequentially inputting the additive and siloxane which increases by the sequential input is etched with hydrofluoric acid generated by decomposition of the fluoroboric acid, to thereby suppress a significant increase in the concentration of siloxane. This makes it possible to maintain respective initial etching rates of the silicon nitride film and a silicon oxide film.
1. A substrate processing method for performing an etching process by immersing a substrate on which a silicon oxide film and a silicon nitride film are formed into a phosphoric acid solution to etch the silicon nitride film, comprising the steps of:
a) performing a process of etching a silicon nitride film by immersing said substrate into a phosphoric acid solution;
b) inputting an additive containing a hexafluorosilicic acid into said phosphoric acid solution; and
c) inputting a trap agent containing a fluoroboric acid into said phosphoric acid solution to thereby trap siloxane generated by the input of said additive, to suppress an increase in the concentration of siloxane in said phosphoric acid solution.
2. The substrate processing method according to claim 1 , wherein
said additive is sequentially inputted into said phosphoric acid solution at constant time intervals.
3. The substrate processing method according to claim 2 , wherein
said trap agent is inputted into said phosphoric acid solution every time when the etching process is performed on one lot consisting of a predetermined number of substrates.
4. The substrate processing method according to claim 2 , wherein
said trap agent is inputted when the concentration of siloxane contained in said phosphoric acid solution is not lower than a predetermined threshold value.
5. A substrate processing method for performing an etching process by immersing a substrate on which a silicon oxide film and a silicon nitride film are formed into a phosphoric acid solution to etch the silicon nitride film, the method comprising the steps of:
a) performing a process of etching a silicon nitride film by immersing said substrate into a phosphoric acid solution;
b) sequentially inputting an additive containing a hexafluorosilicic acid into said phosphoric acid solution at constant time intervals; and
c) inputting a trap agent containing a fluoroboric acid into said phosphoric acid solution when the concentration of siloxane contained in said phosphoric acid solution is not lower than a predetermined threshold value, wherein
said threshold value is in a range not lower than 80 ppm and not higher than 120 ppm.