Variable write and read methods for resistive random access memory
View Patent ↗Variable write and read methods for resistance random access memory (RRAM) are disclosed. The methods include initializing a write sequence and verifying the resistance state of the RRAM cell. If a write pulse is needed, then two or more write pulses are applied through the RRAM cell to write the desired data state to the RRAM cell. Each subsequent write pulse has substantially the same or greater write pulse duration. Subsequent write pulses are applied to the RRAM cell until the RRAM cell is in the desired data state or until a predetermined number of write pulses have been applied to the RRAM cell. A read method is also disclosed where subsequent read pulses are applied through the RRAM cell until the read is successful or until a predetermined number of read pulses have been applied to the RRAM cell.
1. A variable write method for spin-transfer torque random access memory (STRAM), the method comprising:
applying two or more write pulses across an STRAM cell to write a desired data state to the STRAM cell, each write pulse has a substantially similar amplitude, and each subsequent write pulse has a substantially similar duration or an increasing duration and incrementing a counter by one for each write pulse application;
reading a resistance value across the STRAM cell following the application of each write pulse, if the resistance value indicates that the STRAM cell is in the desired data state for the bit to be written, then the write method is complete, otherwise the applying step is repeated.
2. A method according to claim 1 , wherein each write pulse duration is determined by a look-up table.
3. A method according to claim 1 , wherein the method continues until either the STRAM cell is in a desired data state or the counter reaches a predetermined integer.
4. A method according to claim 3 , further comprising generating an error code or flag if the counter reaches the predetermined integer.
5. A method according to claim 1 , wherein a first write pulse duration is less than 1.0×10 −8 sec.
6. A method according to claim 1 , wherein the second and subsequent write pulse durations are greater than a previous write pulse duration by a constant amount.
7. A method according to claim 1 , wherein at least two write pulse durations are substantially the same.