Patent Assignment
Reel/Frame 050483/0188
ASSIGNMENT OF ASSIGNOR'S INTEREST
Recorded: 2019-09-25
Received: 2019-09-25
Pages: 7
Assignor
SEAGATE TECHNOLOGY LLC
Executed: 2019-09-12
Assignee
EVERSPIN TECHNOLOGIES, INC.
5670 W. CHANDLER BLVD., SUITE 100, CHANDLER, AZ, 85226, UNITED STATES
Covered Applications
(38)
THREE DIMENSIONAL RESISTIVE MEMORY
App. No. 13/892,675
→
MEMORY WITH SEPARATE READ AND WRITE PATHS
App. No. 13/785,525
→
SPIN-TORQUE MEMORY WITH UNIDIRECTIONAL WRITE SCHEME
App. No. 13/530,460
→
TRANSMISSION GATE-BASED SPIN-TRANSFER TORQUE MEMORY UNIT
App. No. 13/474,839
→
SPIN-TRANSFER TORQUE MEMORY SELF-REFERENCE READ METHOD
App. No. 13/349,052
→
POLARITY DEPENDENT SWITCH FOR RESISTIVE SENSE MEMORY
App. No. 13/278,334
→
ST-RAM MAGNETIC ELEMENT CONFIGURATIONS TO REDUCE SWITCHING CURRENT
App. No. 13/169,449
→
TRANSMISSION GATE-BASED SPIN-TRANSFER TORQUE MEMORY UNIT
App. No. 13/149,136
→
NON-VOLATILE MEMORY CELL WITH PRECESSIONAL SWITCHING
App. No. 13/091,372
→
STRAM WITH COMPENSATION ELEMENT AND METHOD OF MAKING THE SAME
App. No. 13/086,613
→
SHARED BIT LINE AND SOURCE LINE RESISTIVE SENSE MEMORY STRUCTURE
App. No. 13/086,869
→
MRAM CELLS INCLUDING COUPLED FREE FERROMAGNETIC LAYERS FOR STABILIZATION
App. No. 13/015,320
→
PROGRAMMABLE RESISTIVE MEMORY CELL WITH FILAMENT PLACEMENT STRUCTURE
App. No. 13/014,941
→
MEMORY WITH SEPARATE READ AND WRITE PATHS
App. No. 12/974,679
→
RECONFIGURABLE MAGNETIC LOGIC DEVICE USING SPIN TORQUE
App. No. 12/956,487
→
NON-VOLATILE PROGRAMMABLE LOGIC GATES AND ADDERS
App. No. 12/953,544
→
SPIN-TRANSFER TORQUE MEMORY SELF-REFERENCE READ AND WRITE ASSIST METHODS
App. No. 12/903,305
→
POLARITY DEPENDENT SWITCH FOR RESISTIVE SENSE MEMORY
App. No. 12/903,301
→
NON-VOLATILE MEMORY CELL WITH RESISTIVE SENSE ELEMENT BLOCK ERASE AND UNI-DIRECTIONAL WRITE
App. No. 12/903,011
→
MULTI-BIT MEMORY WITH SELECTABLE MAGNETIC LAYER
App. No. 12/900,314
→
MULTI-BIT STRAM MEMORY CELLS
App. No. 12/869,950
→
STATIS SOURCE PLANE IN STRAM
App. No. 12/855,896
→
SPIN-TORQUE MEMORY WITH UNIDIRECTIONAL WRITE SCHEME
App. No. 12/795,020
→
VARIABLE WRITE AND READ METHODS FOR RESISTIVE RANDOM ACCESS MEMORY
App. No. 12/794,009
→
POLARITY DEPENDENT SWITCH FOR RESISTIVE SENSE MEMORY
App. No. 12/774,018
→
NON-VOLATILE RESISTIVE SENSE MEMORY WITH PRASEODYMIUM CALCIUM MANGANESE OXIDE
App. No. 12/501,533
→
POLARITY DEPENDENT SWITCH FOR RESISTIVE SENSE MEMORY
App. No. 12/407,823
→
STRAM WITH COMPENSATION ELEMENT AND METHOD OF MAKING THE SAME
App. No. 12/396,905
→
SPIN-TRANSFER TORQUE MEMORY SELF-REFERENCE READ AND WRITE ASSIST METHODS
App. No. 12/372,180
→
SPIN-TRANSFER TORQUE MEMORY SELF-REFERENCE READ AND WRITE ASSIST METHODS
App. No. 12/372,190
→
NON-VOLATILE MEMORY CELL WITH PRECESSIONAL SWITCHING
App. No. 12/364,589
→
STRUCTURES FOR RESISTIVE RANDOM ACCESS MEMORY CELLS
App. No. 12/262,262
→
MRAM CELLS INCLUDING COUPLED FREE FERROMAGNETIC LAYERS FOR STABILIZATION
App. No. 12/248,257
→
STATIC SOURCE PLANE IN STRAM
App. No. 12/242,331
→
VARIABLE WRITE AND READ METHODS FOR RESISTIVE RANDOM ACCESS MEMORY
App. No. 12/210,526
→
TRANSMISSION GATE-BASED SPIN-TRANSFER TORQUE MEMORY UNIT
App. No. 12/170,549
→
ST-RAM MAGNETIC ELEMENT CONFIGURATIONS TO REDUCE SWITCHING CURRENT
App. No. 12/108,706
→
SPIN MEMORY WITH WRITE PULSE
App. No. 11/929,495
→