Structures for resistive random access memory cells
A resistive random access memory (RRAM) cell that includes a first electrode having a lower portion, a continuous side portion and an upper portion, the lower portion and the continuous side portion having an outer surface and an inner surface; a resistive layer having a lower portion, a continuous side portion and an upper portion, the lower portion and the continuous side portion having an outer surface and an inner surface; and a second electrode having a lower portion, an upper portion and an outer surface; wherein the outer surface of the resistive layer directly contacts the inner surface of the first electrode.
1. A resistive random access memory (RRAM) cell comprising:
a first electrode having a lower portion, a continuous side portion and an upper portion, the lower portion and the continuous side portion having an outer surface and an inner surface;
a resistive layer having a lower portion, a continuous side portion and an upper portion, the lower portion and the continuous side portion having an outer surface and an inner surface; and
a second electrode having a lower portion, an upper portion and an outer surface;
wherein the outer surface of the resistive layer directly contacts the inner surface of the first electrode.
2. The resistive random access memory (RRAM) cell according to claim 1 , wherein the inner surface of the resistive layer contacts the outer surface of the second electrode.
3. The resistive random access memory (RRAM) cell according to claim 2 , wherein the resistive material comprises a metal oxide material.
4. The resistive random access memory (RRAM) cell according to claim 3 , wherein the metal oxide material is chosen from the group consisting of: titanium (Ti), tantalum (Ta), nickel (Ni), indium (In), zinc (Zn), chromium (Cr), hafnium (Hf), zirconium (Zr), iron (Fe), cobalt (Co), tin (Sn), niobium (Nb), strontium (Sr), manganese (Mn) and combinations thereof.
5. The resistive random access memory (RRAM) cell according to claim 3 , wherein the metal oxide material is chosen from the group consisting of: Pr 1-x Ca x MnO, SrFeO 2.7 , RuSr 2 GdCu 2 O 3 , YBa 2 Cu 3 O 7 , La 1-x Sr x MnO 3 and combinations thereof.
6. The resistive random access memory (RRAM) cell according to claim 3 , wherein the metal oxide material is chosen from the group consisting of: Pr 0.7 Ca 0.3 MnO 3 , La 0.7 Ca 0.3 MnO 3 and combinations thereof.
7. The resistive random access memory (RRAM) cell according to claim 2 , wherein the resistive material comprises a ferroelectric material.
8. The resistive random access memory (RRAM) cell according to claim 7 , wherein the ferroelectric material is chosen from the group consisting of: lead zirconate titanate (PZT), lanthanum doped lead zirconate titanate (PLZT), PtTiO 3 , SrTiO 3 , BaTiO 3 , BaSrTiO 3 , BaBiO, SrBi 4 Ti 4 O 15 , SrBi 2 Ta 2 O 9 , SrBi 2 TaNaO 3 (SBNT), Pb(Mg,Nb)O 3 , Pb 1.1 Nb 0.04 Zr 0.2 Ti 0.8 O 3 (PNZT), BaMgF 4 , KNO 3 , and combinations thereof.
9. The resistive random access memory (RRAM) cell according to claim 1 further comprising a semiconducting layer having a lower portion and a continuous side portion, the lower portion and the continuous side portion having an outer surface and an inner surface, wherein the outer surface of the semiconducting layer contacts the inner surface of the first electrode and the inner surface of the semiconducting layer contacts the outer surface of the resistive layer.
10. The resistive random access memory (RRAM) cell according to claim 9 , wherein the semiconducting layer is a semiconductive, non-ferroelectric perovskite material.
11. The resistive random access memory (RRAM) cell according to claim 10 , wherein the semiconductive, non-ferroelectric perovskite material is chosen from the group consisting of: niobium (Nb) doped strontium titanate (SrTiO), chromium (Cr) doped strontium titanate (SrTiO), ruthenium (Ru) doped strontium titanate (SrTiO) and combinations thereof.
12. The resistive random access memory (RRAM) cell according to claim 1 further comprising a top contact, wherein the top contact is disposed on the top side of the second electrode only.
13. The resistive random access memory (RRAM) cell according to claim 12 further comprising an insulating layer disposed on the top side of the resistive material and the first electrode.
14. The resistive random access memory (RRAM) cell according to claim 1 further comprising a bottom contact, wherein the bottom contact is electrically connected to the first electrode.
15. A resistive random access memory (RRAM) device comprising:
a resistive random access memory (RRAM) cell comprising:
a first electrode having a bottom portion, a continuous side portion and a top portion, the bottom portion and the continuous side portion having an outer surface and an inner surface;
a resistive material having a bottom portion, a continuous side portion and a top portion, the bottom portion and the continuous side portion having an outer surface and an inner surface;
a second electrode having a bottom portion, a top portion and an outer surface;
a bottom contact, electrically connected to the first electrode; and
a top contact, electrically connected to the second electrode,
wherein the outer surface of the resistive material contacts the inner surface of the first electrode; and
a transistor,
wherein the resistive random access memory (RRAM) cell is electrically coupled to the transistor via the bottom contact of the resistive random access memory (RRAM) cell.
16. The resistive random access memory (RRAM) device according to claim 15 , wherein the inner surface of the resistive material contacts the outer surface of the second electrode.
17. The resistive random access memory (RRAM) device according to claim 15 , further comprising a semiconducting layer having a bottom portion a continuous side portion and a top portion, the bottom portion and the continuous side portion having an outer surface and an inner surface, wherein the outer surface of the semiconducting layer contacts the inner surface of the first electrode and the inner surface of the semiconducting layer contacts the outer surface of the resistive material.
18. The resistive random access memory (RRAM) cell according to claim 15 , wherein the resistive material comprises a metal oxide material or a ferroelectric material.
19. The resistive random access memory (RRAM) cell according to claim 17 , wherein the semiconducting layer is a semiconductive, non-ferroelectric perovskite material.
20. A memory array comprising:
a plurality of memory devices, each of the plurality of memory devices comprising:
a resistive random access memory cell that comprises:
a first electrode having a bottom portion, a continuous side portion and a top portion, the bottom portion and the continuous side portion having an outer surface and an inner surface;
a resistive material having a bottom portion, a continuous side portion and a top portion, the bottom portion and the continuous side portion having an outer surface and an inner surface;
a second electrode having a bottom portion, a top portion and an outer surface;
a bottom contact, electrically connected to the first electrode; and
a top contact, electrically connected to the second electrode,
wherein the outer surface of the resistive material contacts the inner surface of the first electrode; and
a transistor,
and
a plurality of bit lines; and
a plurality of source lines,
wherein each of the plurality of memory cells is operatively coupled between a bit line and a source line, the plurality of memory cells are arranged in a matrix and the bit lines and source lines connect the plurality of memory cells.