Non-volatile resistive sense memory with praseodymium calcium manganese oxide
View Patent ↗A resistive sense memory cell includes a layer of crystalline praseodymium calcium manganese oxide and a layer of amorphous praseodymium calcium manganese oxide disposed on the layer of crystalline praseodymium calcium manganese oxide forming a resistive sense memory stack. A first and second electrode are separated by the resistive sense memory stack. The resistive sense memory cell can further include an oxygen diffusion barrier layer separating the layer of crystalline praseodymium calcium manganese oxide from the layer of amorphous praseodymium calcium manganese oxide a layer. Methods include depositing an amorphous praseodymium calcium manganese oxide disposed on the layer of crystalline praseodymium calcium manganese oxide forming a resistive sense memory stack.
1. A resistive sense memory cell comprising:
a layer of crystalline praseodymium calcium manganese oxide having a thickness in a range from 10 to 75 nanometers;
a layer of amorphous praseodymium calcium manganese oxide having a thickness in a range from 1 to 7 nanometers disposed on the layer of crystalline praseodymium calcium manganese oxide forming a resistive sense memory stack; and
a first and second electrode separated by the resistive sense memory stack, and
an oxygen diffusion barrier layer separating the layer of crystalline praseodymium calcium manganese oxide from the layer of amorphous praseodymium calcium manganese oxide;
wherein the praseodymium calcium manganese oxide comprises Pr 1-X Ca X MnO 3 , wherein X is in a range from 0.2 to 0.6.
2. A resistive sense memory cell according to claim 1 wherein the first and second electrodes are formed of noble metals.
3. A resistive sense memory cell according to claim 1 wherein the oxygen diffusion barrier layer is a metallic oxygen diffusion barrier layer.
4. A resistive sense memory cell according to claim 3 wherein the oxygen diffusion barrier layer has a thickness in a range from 1 to 10 nanometers.
5. A resistive sense memory cell according to claim 3 wherein the oxygen diffusion barrier layer is a platinum layer.
6. A resistive sense memory cell according to claim 1 wherein the oxygen diffusion barrier layer is a conductive oxide oxygen diffusion barrier layer.
7. A non-volatile memory cell comprising:
a layer of crystalline praseodymium calcium manganese oxide;
a layer of amorphous praseodymium calcium manganese oxide;
an oxygen diffusion barrier layer separating the crystalline praseodymium calcium manganese oxide layer from the amorphous praseodymium calcium manganese oxide layer, forming a resistive sense memory stack, wherein the oxygen diffusion barrier layer allows oxygen ions to move through it with an electrical bias, but inhibits oxygen or oxygen ion transport through it in absence of an electrical bias; and
a first and second electrode separated by the resistive sense memory stack.
8. A non-volatile memory cell according to claim 7 wherein the layer of crystalline praseodymium calcium manganese oxide has a thickness in a range from 10 to 75 nanometers and the layer of amorphous praseodymium calcium manganese oxide has a thickness in a range from 1 to 7 nanometers.
9. A non-volatile memory cell according to claim 8 wherein the oxygen diffusion barrier layer has a thickness in a range from 1 to 10 nanometers.
10. A non-volatile memory cell according to claim 7 wherein the first and second electrodes are formed of tungsten, nickel, molybdenum, platinum, gold, palladium, rhodium, and alloys, mixtures or combinations thereof.
11. A non-volatile memory cell according to claim 7 wherein the oxygen diffusion barrier layer is a metallic oxygen diffusion barrier layer comprising platinum.
12. A non-volatile memory cell according to claim 7 wherein the praseodymium calcium manganese oxide comprises Pr 1-X Ca X Mn 0 3 , wherein X is in a range from 0.2 to 0.6.
13. A non-volatile memory cell according to claim 7 wherein the oxygen diffusion barrier layer is a conductive oxide oxygen diffusion barrier layer comprising IrO, RuO, SrRuO 3 , lanthanum calcium manganese oxide, or combinations thereof.
14. A method comprising:
depositing a layer of crystalline praseodymium calcium manganese oxide on a first electrode;
depositing an oxygen diffusion barrier layer on the layer of crystalline praseodymium calcium manganese oxide;
depositing a layer of amorphous praseodymium calcium manganese oxide on the oxygen diffusion barrier; and
depositing a second electrode on the layer of amorphous praseodymium calcium manganese oxide, forming a resistive sense memory cell.
15. A method according to claim 14 wherein the crystalline praseodymium calcium manganese oxide is deposited at a temperature of at least 400 degrees centigrade.
16. A method according to claim 14 wherein the amorphous praseodymium calcium manganese oxide is deposited at a temperature of less than 400 degrees centigrade.