IP Library Granted Patent US 7,719,876
Granted Patent B2
US 7,719,876 · App. 12/221,136 · Granted May 18, 2010

Preservation circuit and methods to maintain values representing data in one or more layers of memory

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Quick Facts
Patent No.
US 7,719,876
App. No.
12/221,136
Granted
May 18, 2010
Kind
B2
Abstract

Circuitry and methods for restoring data in memory are disclosed. The memory may include at least one layer of a non-volatile two-terminal cross-point array that includes a plurality of two-terminal memory elements that store data as a plurality of conductivity profiles and retain stored data in the absence of power. Over a period of time, logic values indicative of the stored data may drift such that if the logic values are not restored, the stored data may become corrupted. At least a portion of each memory may have data rewritten or restored by circuitry electrically coupled with the memory. Other circuitry may be used to determine a schedule for performing restore operations to the memory and the restore operations may be triggered by an internal or an external signal or event. The circuitry may be positioned in a logic layer and the memory may be fabricated over the logic layer.

Claims (12)

1. A memory device comprising:

at least one layer of memory including a plurality of memory cells, each memory cell configured to store logic states associated with resistance values; and

a preservation circuit electrically coupled with the plurality of memory cells and configured to, in response to a trigger signal, restore the resistance values to represent the logic states,

wherein the preservation circuit is further configured to preserve the resistance values of a subset of the plurality of memory cells.

2. A computer-readable medium including executable instructions configured to perform steps comprising:

sleeping for a period of time;

determining a portion of memory to read, the memory including a plurality of resistive-based, nonvolatile memory cells;

reading the portion of the memory from a first location into a buffer; and

rewriting the portion of memory into a second location of the memory.

3. The computer-readable medium of claim 2 , wherein the sleeping for the period of time comprises sleeping for at least 500 milliseconds.

4. The computer-readable medium of claim 2 , wherein the second location comprises the first location.

5. The computer-readable medium of claim 2 , wherein the sleeping for the period of time further comprises operating a clock in a host to count a number of time units associated with the period of time.

Assignments (3)
RELEASE Recorded Apr 9, 2012
From: SILICON VALLEY BANK; GOLD HILL CAPITAL
To: UNITY SEMICONDUCTOR, INC.
Reel/Frame 028132/0675 →
SECURITY AGREEMENT Recorded Apr 13, 2009
From: UNITY SEMICONDUCTOR CORPORATION
To: GOLD HILL CAPITAL
Reel/Frame 023129/0669 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 22, 2008
From: CHEVALLIER, CHRISTOPHE, MR.; NORMAN, ROBERT
To: UNITY SEMICONDUCTOR CORPORATION
Reel/Frame 021726/0023 →